FR2682812A1 - Dispositif semi-conducteur comprenant une tetrode a transistors integree. - Google Patents

Dispositif semi-conducteur comprenant une tetrode a transistors integree. Download PDF

Info

Publication number
FR2682812A1
FR2682812A1 FR9212441A FR9212441A FR2682812A1 FR 2682812 A1 FR2682812 A1 FR 2682812A1 FR 9212441 A FR9212441 A FR 9212441A FR 9212441 A FR9212441 A FR 9212441A FR 2682812 A1 FR2682812 A1 FR 2682812A1
Authority
FR
France
Prior art keywords
tetrode
transistor
semiconductor device
field effect
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR9212441A
Other languages
English (en)
French (fr)
Other versions
FR2682812B1 (enExample
Inventor
Quast Wilfried
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Electronic GmbH
Original Assignee
Telefunken Electronic GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Electronic GmbH filed Critical Telefunken Electronic GmbH
Publication of FR2682812A1 publication Critical patent/FR2682812A1/fr
Application granted granted Critical
Publication of FR2682812B1 publication Critical patent/FR2682812B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
    • H03D9/06—Transference of modulation using distributed inductance and capacitance
    • H03D9/0658—Transference of modulation using distributed inductance and capacitance by means of semiconductor devices having more than two electrodes
    • H03D9/0675—Transference of modulation using distributed inductance and capacitance by means of semiconductor devices having more than two electrodes using field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0001—Circuit elements of demodulators
    • H03D2200/0007—Dual gate field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR9212441A 1991-10-16 1992-10-16 Dispositif semi-conducteur comprenant une tetrode a transistors integree. Granted FR2682812A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4134176A DE4134176C2 (de) 1991-10-16 1991-10-16 Halbleiteranordnung mit einer im Halbleiterkörper integrierten und aus zwei Feldeffekttransistoren aufgebauten Tetrode

Publications (2)

Publication Number Publication Date
FR2682812A1 true FR2682812A1 (fr) 1993-04-23
FR2682812B1 FR2682812B1 (enExample) 1995-01-20

Family

ID=6442760

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9212441A Granted FR2682812A1 (fr) 1991-10-16 1992-10-16 Dispositif semi-conducteur comprenant une tetrode a transistors integree.

Country Status (4)

Country Link
US (1) US5317282A (enExample)
DE (1) DE4134176C2 (enExample)
FR (1) FR2682812A1 (enExample)
IT (1) IT1255865B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271067B1 (en) 1998-02-27 2001-08-07 Micron Technology, Inc. Methods of forming field effect transistors and field effect transistor circuitry
KR100585886B1 (ko) * 2004-01-27 2006-06-01 삼성전자주식회사 동적 문턱 전압을 가지는 반도체 회로
US7864492B2 (en) * 2006-10-31 2011-01-04 Siemens Industry, Inc. Systems and methods for arc fault detection

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0330142A2 (en) * 1988-02-22 1989-08-30 Kabushiki Kaisha Toshiba Multi-gate field-effect transistor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2823662A1 (de) * 1978-05-30 1979-12-06 Siemens Ag Schaltungsanordnung zur arbeitspunktstabilisierung eines verstaerker-feldeffekttransistors
DE3017654A1 (de) * 1980-05-08 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Integrierte schaltungsanordnung
US4658220A (en) * 1985-09-06 1987-04-14 Texas Instruments Incorporated Dual-gate, field-effect transistor low noise amplifier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0330142A2 (en) * 1988-02-22 1989-08-30 Kabushiki Kaisha Toshiba Multi-gate field-effect transistor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
A. BRENNEMANN ET S. TANSAL: "An AND gate using single FET", IBM TECHNICAL DISCLOSURE BULLETIN., vol. 7, no. 1, June 1964 (1964-06-01), NEW YORK US, pages 7 *

Also Published As

Publication number Publication date
ITMI922354A0 (it) 1992-10-14
DE4134176C2 (de) 1994-04-21
FR2682812B1 (enExample) 1995-01-20
US5317282A (en) 1994-05-31
IT1255865B (it) 1995-11-17
DE4134176A1 (de) 1993-04-22
ITMI922354A1 (it) 1994-04-14

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ST Notification of lapse