JPS6226190B2 - - Google Patents

Info

Publication number
JPS6226190B2
JPS6226190B2 JP54104180A JP10418079A JPS6226190B2 JP S6226190 B2 JPS6226190 B2 JP S6226190B2 JP 54104180 A JP54104180 A JP 54104180A JP 10418079 A JP10418079 A JP 10418079A JP S6226190 B2 JPS6226190 B2 JP S6226190B2
Authority
JP
Japan
Prior art keywords
floating gate
fet
gate
active
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54104180A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5575269A (en
Inventor
Riibusu Hofuman Chaaruzu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5575269A publication Critical patent/JPS5575269A/ja
Publication of JPS6226190B2 publication Critical patent/JPS6226190B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP10418079A 1978-11-29 1979-08-17 Continuity parameter regulator Granted JPS5575269A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/964,323 US4245165A (en) 1978-11-29 1978-11-29 Reversible electrically variable active parameter trimming apparatus utilizing floating gate as control

Publications (2)

Publication Number Publication Date
JPS5575269A JPS5575269A (en) 1980-06-06
JPS6226190B2 true JPS6226190B2 (enExample) 1987-06-08

Family

ID=25508411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10418079A Granted JPS5575269A (en) 1978-11-29 1979-08-17 Continuity parameter regulator

Country Status (4)

Country Link
US (1) US4245165A (enExample)
EP (1) EP0011694B1 (enExample)
JP (1) JPS5575269A (enExample)
DE (1) DE2964299D1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2558659B1 (fr) * 1984-01-20 1986-04-25 Thomson Csf Circuit de polarisation d'un transistor a effet de champ
JPS61123169A (ja) * 1984-11-20 1986-06-11 Fujitsu Ltd 半導体集積回路
US4829459A (en) * 1987-11-23 1989-05-09 Ford Aerospace & Communications Corporation Programmable voltage offset circuit
JP2578465B2 (ja) * 1988-03-16 1997-02-05 富士通株式会社 パルス信号発生回路
DE19630112C1 (de) * 1996-07-25 1997-08-14 Siemens Ag Verstärker mit Neuron-MOS-Transistoren
US6535735B2 (en) * 2001-03-22 2003-03-18 Skyworks Solutions, Inc. Critical path adaptive power control
KR100506191B1 (ko) * 2002-07-08 2005-08-04 주식회사 하이닉스반도체 플래쉬 메모리 소자에서의 트림 비트 신호 생성 회로
US7388247B1 (en) * 2003-05-28 2008-06-17 The United States Of America As Represented By The Secretary Of The Navy High precision microelectromechanical capacitor with programmable voltage source
US7446612B2 (en) * 2006-09-08 2008-11-04 Skyworks Solutions, Inc. Amplifier feedback and bias configuration
US7696826B2 (en) * 2006-12-04 2010-04-13 Skyworks Solutions, Inc. Temperature compensation of collector-voltage control RF amplifiers
US8283198B2 (en) 2010-05-10 2012-10-09 Micron Technology, Inc. Resistive memory and methods of processing resistive memory

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3275911A (en) * 1963-11-06 1966-09-27 Motorola Inc Semiconductor current limiter
GB1136569A (en) * 1965-12-22 1968-12-11 Mullard Ltd Insulated gate field effect transistors
US3721838A (en) * 1970-12-21 1973-03-20 Ibm Repairable semiconductor circuit element and method of manufacture
US3795974A (en) * 1971-12-16 1974-03-12 Hughes Aircraft Co Repairable multi-level large scale integrated circuit
JPS5521464B2 (enExample) * 1972-12-13 1980-06-10
US3836992A (en) * 1973-03-16 1974-09-17 Ibm Electrically erasable floating gate fet memory cell
JPS5716747B2 (enExample) * 1974-10-01 1982-04-07
JPS5925391B2 (ja) * 1975-08-15 1984-06-16 セイコーエプソン株式会社 半導体集積回路
GB2000407B (en) * 1977-06-27 1982-01-27 Hughes Aircraft Co Volatile/non-volatile logic latch circuit

Also Published As

Publication number Publication date
DE2964299D1 (en) 1983-01-20
JPS5575269A (en) 1980-06-06
US4245165A (en) 1981-01-13
EP0011694B1 (fr) 1982-12-15
EP0011694A1 (fr) 1980-06-11

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