IT1255865B - Disposizione a semiconduttore - Google Patents

Disposizione a semiconduttore

Info

Publication number
IT1255865B
IT1255865B ITMI922354A ITMI922354A IT1255865B IT 1255865 B IT1255865 B IT 1255865B IT MI922354 A ITMI922354 A IT MI922354A IT MI922354 A ITMI922354 A IT MI922354A IT 1255865 B IT1255865 B IT 1255865B
Authority
IT
Italy
Prior art keywords
semiconductor arrangement
semiconductor
arrangement
Prior art date
Application number
ITMI922354A
Other languages
English (en)
Italian (it)
Inventor
Wilfried Quast
Original Assignee
Telefunken Electronic Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Electronic Gmbh filed Critical Telefunken Electronic Gmbh
Publication of ITMI922354A0 publication Critical patent/ITMI922354A0/it
Publication of ITMI922354A1 publication Critical patent/ITMI922354A1/it
Application granted granted Critical
Publication of IT1255865B publication Critical patent/IT1255865B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
    • H03D9/06—Transference of modulation using distributed inductance and capacitance
    • H03D9/0658—Transference of modulation using distributed inductance and capacitance by means of semiconductor devices having more than two electrodes
    • H03D9/0675—Transference of modulation using distributed inductance and capacitance by means of semiconductor devices having more than two electrodes using field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0001—Circuit elements of demodulators
    • H03D2200/0007—Dual gate field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
ITMI922354A 1991-10-16 1992-10-14 Disposizione a semiconduttore IT1255865B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4134176A DE4134176C2 (de) 1991-10-16 1991-10-16 Halbleiteranordnung mit einer im Halbleiterkörper integrierten und aus zwei Feldeffekttransistoren aufgebauten Tetrode

Publications (3)

Publication Number Publication Date
ITMI922354A0 ITMI922354A0 (it) 1992-10-14
ITMI922354A1 ITMI922354A1 (it) 1994-04-14
IT1255865B true IT1255865B (it) 1995-11-17

Family

ID=6442760

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI922354A IT1255865B (it) 1991-10-16 1992-10-14 Disposizione a semiconduttore

Country Status (4)

Country Link
US (1) US5317282A (enExample)
DE (1) DE4134176C2 (enExample)
FR (1) FR2682812A1 (enExample)
IT (1) IT1255865B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271067B1 (en) 1998-02-27 2001-08-07 Micron Technology, Inc. Methods of forming field effect transistors and field effect transistor circuitry
KR100585886B1 (ko) * 2004-01-27 2006-06-01 삼성전자주식회사 동적 문턱 전압을 가지는 반도체 회로
US7864492B2 (en) * 2006-10-31 2011-01-04 Siemens Industry, Inc. Systems and methods for arc fault detection

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2823662A1 (de) * 1978-05-30 1979-12-06 Siemens Ag Schaltungsanordnung zur arbeitspunktstabilisierung eines verstaerker-feldeffekttransistors
DE3017654A1 (de) * 1980-05-08 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Integrierte schaltungsanordnung
US4658220A (en) * 1985-09-06 1987-04-14 Texas Instruments Incorporated Dual-gate, field-effect transistor low noise amplifier
JPH0770733B2 (ja) * 1988-02-22 1995-07-31 株式会社東芝 半導体装置とその使用方法

Also Published As

Publication number Publication date
ITMI922354A0 (it) 1992-10-14
DE4134176C2 (de) 1994-04-21
FR2682812B1 (enExample) 1995-01-20
US5317282A (en) 1994-05-31
DE4134176A1 (de) 1993-04-22
FR2682812A1 (fr) 1993-04-23
ITMI922354A1 (it) 1994-04-14

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971029