FR2676308B1 - Transistor a effet de champ utilisant un effet tunnel resonnant et procede de fabrication. - Google Patents
Transistor a effet de champ utilisant un effet tunnel resonnant et procede de fabrication.Info
- Publication number
- FR2676308B1 FR2676308B1 FR9205582A FR9205582A FR2676308B1 FR 2676308 B1 FR2676308 B1 FR 2676308B1 FR 9205582 A FR9205582 A FR 9205582A FR 9205582 A FR9205582 A FR 9205582A FR 2676308 B1 FR2676308 B1 FR 2676308B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- resonant tunnel
- field effect
- effect transistor
- tunnel effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3105878A JPH04335538A (ja) | 1991-05-10 | 1991-05-10 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2676308A1 FR2676308A1 (fr) | 1992-11-13 |
FR2676308B1 true FR2676308B1 (fr) | 2001-08-10 |
Family
ID=14419194
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9205582A Expired - Fee Related FR2676308B1 (fr) | 1991-05-10 | 1992-05-06 | Transistor a effet de champ utilisant un effet tunnel resonnant et procede de fabrication. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5336904A (fr) |
JP (1) | JPH04335538A (fr) |
DE (1) | DE4212861C2 (fr) |
FR (1) | FR2676308B1 (fr) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5739544A (en) * | 1993-05-26 | 1998-04-14 | Matsushita Electric Industrial Co., Ltd. | Quantization functional device utilizing a resonance tunneling effect and method for producing the same |
GB9321326D0 (en) * | 1993-10-15 | 1993-12-08 | Hitachi Europ Ltd | Controllable conduction device with multiple tunnel junction |
US5796119A (en) * | 1993-10-29 | 1998-08-18 | Texas Instruments Incorporated | Silicon resonant tunneling |
US5489539A (en) * | 1994-01-10 | 1996-02-06 | Hughes Aircraft Company | Method of making quantum well structure with self-aligned gate |
US5877515A (en) * | 1995-10-10 | 1999-03-02 | International Rectifier Corporation | SiC semiconductor device |
FR2749977B1 (fr) * | 1996-06-14 | 1998-10-09 | Commissariat Energie Atomique | Transistor mos a puits quantique et procedes de fabrication de celui-ci |
US6191432B1 (en) * | 1996-09-02 | 2001-02-20 | Kabushiki Kaisha Toshiba | Semiconductor device and memory device |
US6310385B1 (en) | 1997-01-16 | 2001-10-30 | International Rectifier Corp. | High band gap layer to isolate wells in high voltage power integrated circuits |
US6180958B1 (en) * | 1997-02-07 | 2001-01-30 | James Albert Cooper, Jr. | Structure for increasing the maximum voltage of silicon carbide power transistors |
WO2002073673A1 (fr) | 2001-03-13 | 2002-09-19 | Rochester Institute Of Technology | Commutateur micro-electromecanique et un procede de sa mise en oeuvre et de sa fabrication |
JP4570806B2 (ja) * | 2001-04-11 | 2010-10-27 | セイコーインスツル株式会社 | 半導体集積回路装置の製造方法 |
US7378775B2 (en) | 2001-10-26 | 2008-05-27 | Nth Tech Corporation | Motion based, electrostatic power source and methods thereof |
US7287328B2 (en) | 2003-08-29 | 2007-10-30 | Rochester Institute Of Technology | Methods for distributed electrode injection |
US7217582B2 (en) | 2003-08-29 | 2007-05-15 | Rochester Institute Of Technology | Method for non-damaging charge injection and a system thereof |
US20050048409A1 (en) * | 2003-08-29 | 2005-03-03 | Elqaq Deirdre H. | Method of making an optical device in silicon |
JP2005209980A (ja) * | 2004-01-26 | 2005-08-04 | Sony Corp | 半導体装置の製造方法および半導体装置 |
US8581308B2 (en) * | 2004-02-19 | 2013-11-12 | Rochester Institute Of Technology | High temperature embedded charge devices and methods thereof |
US7465992B2 (en) * | 2005-04-27 | 2008-12-16 | International Business Machines Corporation | Field effect transistor with mixed-crystal-orientation channel and source/drain regions |
AU2006258261A1 (en) * | 2005-06-16 | 2006-12-21 | Qunano Ab | Semiconductor nanowire transistor |
US8338887B2 (en) * | 2005-07-06 | 2012-12-25 | Infineon Technologies Ag | Buried gate transistor |
EP1979935A1 (fr) * | 2006-01-25 | 2008-10-15 | Nxp B.V. | Transistor de tunnelisation avec barriere |
EP1816689A1 (fr) * | 2006-02-07 | 2007-08-08 | ST Microelectronics Crolles 2 SAS | Structure de transistor ou de triode à effet tunnel et à nanocanal isolant |
US8093584B2 (en) * | 2008-12-23 | 2012-01-10 | Intel Corporation | Self-aligned replacement metal gate process for QWFET devices |
KR101159900B1 (ko) * | 2009-04-22 | 2012-06-25 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그 제조방법 |
JP5355692B2 (ja) * | 2009-07-08 | 2013-11-27 | 株式会社東芝 | 半導体装置及びその製造方法 |
US8324661B2 (en) * | 2009-12-23 | 2012-12-04 | Intel Corporation | Quantum well transistors with remote counter doping |
JP5662865B2 (ja) | 2010-05-19 | 2015-02-04 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US10103226B2 (en) | 2012-04-30 | 2018-10-16 | International Business Machines Corporation | Method of fabricating tunnel transistors with abrupt junctions |
JP2015041764A (ja) * | 2013-08-20 | 2015-03-02 | 正幸 安部 | 半導体装置 |
JP2015041765A (ja) * | 2013-08-20 | 2015-03-02 | 正幸 安部 | 半導体装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4127861A (en) * | 1977-09-26 | 1978-11-28 | International Business Machines Corporation | Metal base transistor with thin film amorphous semiconductors |
US4704622A (en) * | 1985-11-27 | 1987-11-03 | American Telephone And Telegraph Company, At&T Bell Laboratories | Negative transconductance device |
US4721983A (en) * | 1986-01-31 | 1988-01-26 | Texas Instruments Incorporated | Three terminal tunneling device |
US4908678A (en) * | 1986-10-08 | 1990-03-13 | Semiconductor Energy Laboratory Co., Ltd. | FET with a super lattice channel |
KR880010509A (ko) * | 1987-02-11 | 1988-10-10 | 오레그 이. 앨버 | 전계효과 트랜지스터 |
US5130766A (en) * | 1988-08-04 | 1992-07-14 | Fujitsu Limited | Quantum interference type semiconductor device |
JP3194941B2 (ja) * | 1990-03-19 | 2001-08-06 | 富士通株式会社 | 半導体装置 |
-
1991
- 1991-05-10 JP JP3105878A patent/JPH04335538A/ja not_active Withdrawn
-
1992
- 1992-04-02 US US07/864,897 patent/US5336904A/en not_active Expired - Fee Related
- 1992-04-16 DE DE4212861A patent/DE4212861C2/de not_active Expired - Fee Related
- 1992-05-06 FR FR9205582A patent/FR2676308B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH04335538A (ja) | 1992-11-24 |
US5336904A (en) | 1994-08-09 |
DE4212861C2 (de) | 1996-04-18 |
FR2676308A1 (fr) | 1992-11-13 |
DE4212861A1 (de) | 1992-11-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |