FR2668855B1 - Dispositif a semiconducteurs comportant deux groupes de transistors elementaires disposes face a face. - Google Patents

Dispositif a semiconducteurs comportant deux groupes de transistors elementaires disposes face a face.

Info

Publication number
FR2668855B1
FR2668855B1 FR9112687A FR9112687A FR2668855B1 FR 2668855 B1 FR2668855 B1 FR 2668855B1 FR 9112687 A FR9112687 A FR 9112687A FR 9112687 A FR9112687 A FR 9112687A FR 2668855 B1 FR2668855 B1 FR 2668855B1
Authority
FR
France
Prior art keywords
face
groups
semiconductor device
transistors arranged
elementary transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9112687A
Other languages
English (en)
Other versions
FR2668855A1 (fr
Inventor
Sakamoto Shinichi
Sonoda Takuji
Kasai Nobuyuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2668855A1 publication Critical patent/FR2668855A1/fr
Application granted granted Critical
Publication of FR2668855B1 publication Critical patent/FR2668855B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR9112687A 1990-11-02 1991-10-15 Dispositif a semiconducteurs comportant deux groupes de transistors elementaires disposes face a face. Expired - Fee Related FR2668855B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2298679A JPH04171734A (ja) 1990-11-02 1990-11-02 半導体装置

Publications (2)

Publication Number Publication Date
FR2668855A1 FR2668855A1 (fr) 1992-05-07
FR2668855B1 true FR2668855B1 (fr) 1995-02-03

Family

ID=17862875

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9112687A Expired - Fee Related FR2668855B1 (fr) 1990-11-02 1991-10-15 Dispositif a semiconducteurs comportant deux groupes de transistors elementaires disposes face a face.

Country Status (3)

Country Link
US (1) US5185534A (fr)
JP (1) JPH04171734A (fr)
FR (1) FR2668855B1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06244216A (ja) * 1992-12-21 1994-09-02 Mitsubishi Electric Corp Ｉｐｇトランジスタ及びその製造方法，並びに半導体集積回路装置及びその製造方法
JPH06333954A (ja) * 1993-05-26 1994-12-02 Mitsubishi Electric Corp 電界効果トランジスタ及びその製造方法
JP2580966B2 (ja) * 1993-08-05 1997-02-12 日本電気株式会社 半導体装置
US6081006A (en) * 1998-08-13 2000-06-27 Cisco Systems, Inc. Reduced size field effect transistor
US6530068B1 (en) * 1999-08-03 2003-03-04 Advanced Micro Devices, Inc. Device modeling and characterization structure with multiplexed pads
JP3712111B2 (ja) 2001-03-30 2005-11-02 ユーディナデバイス株式会社 電力増幅用半導体装置
US6774416B2 (en) * 2001-07-16 2004-08-10 Nanowave, Inc Small area cascode FET structure operating at mm-wave frequencies
DE112007000161B4 (de) 2006-07-12 2009-10-29 Kabushiki Kaisha Toshiba Multifinger-FET für Hochfrequenz
JP2012023212A (ja) * 2010-07-14 2012-02-02 Sumitomo Electric Ind Ltd 半導体装置
US9685438B2 (en) * 2015-08-19 2017-06-20 Raytheon Company Field effect transistor having two-dimensionally distributed field effect transistor cells
US9698144B2 (en) 2015-08-19 2017-07-04 Raytheon Company Field effect transistor having loop distributed field effect transistor cells
JP6268132B2 (ja) * 2015-08-28 2018-01-24 株式会社東芝 高周波半導体装置
EP3872844A4 (fr) * 2018-11-30 2022-02-09 Mitsubishi Electric Corporation Dispositif à semi-conducteur

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3737743A (en) * 1971-12-23 1973-06-05 Gen Electric High power microwave field effect transistor
US3969745A (en) * 1974-09-18 1976-07-13 Texas Instruments Incorporated Interconnection in multi element planar structures
US4104672A (en) * 1976-10-29 1978-08-01 Bell Telephone Laboratories, Incorporated High power gallium arsenide schottky barrier field effect transistor
GB1603260A (en) * 1978-05-31 1981-11-25 Secr Defence Devices and their fabrication
US4313126A (en) * 1979-05-21 1982-01-26 Raytheon Company Field effect transistor
US4440290A (en) * 1981-04-02 1984-04-03 Sherwood Tool, Incorporated Receptacle forming apparatus having split receiver
JPS62274669A (ja) * 1986-05-22 1987-11-28 Nec Corp ガリウム砒素電界効果形半導体装置
US5025296A (en) * 1988-02-29 1991-06-18 Motorola, Inc. Center tapped FET
US4996582A (en) * 1988-09-14 1991-02-26 Mitsubishi Denki Kabushiki Kaisha Field effect transistor for microstrip mounting and microstrip-mounted transistor assembly
US5023677A (en) * 1990-05-02 1991-06-11 Texas Instruments Incorporated Low parasitic FET topology for power and low noise GaAs FETs
US5084750A (en) * 1991-02-20 1992-01-28 Raytheon Company Push-pull heterojunction bipolar transistor

Also Published As

Publication number Publication date
FR2668855A1 (fr) 1992-05-07
JPH04171734A (ja) 1992-06-18
US5185534A (en) 1993-02-09

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Legal Events

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