KR860004468A - 고속 반도체 장치 - Google Patents

고속 반도체 장치

Info

Publication number
KR860004468A
KR860004468A KR1019850008603A KR850008603A KR860004468A KR 860004468 A KR860004468 A KR 860004468A KR 1019850008603 A KR1019850008603 A KR 1019850008603A KR 850008603 A KR850008603 A KR 850008603A KR 860004468 A KR860004468 A KR 860004468A
Authority
KR
South Korea
Prior art keywords
semiconductor device
high speed
speed semiconductor
speed
semiconductor
Prior art date
Application number
KR1019850008603A
Other languages
English (en)
Other versions
KR920002670B1 (ko
Inventor
겐니찌 이마무라
나오끼 요꼬야마
도시오 호시마
Original Assignee
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지쓰 가부시끼가이샤 filed Critical 후지쓰 가부시끼가이샤
Publication of KR860004468A publication Critical patent/KR860004468A/ko
Application granted granted Critical
Publication of KR920002670B1 publication Critical patent/KR920002670B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Bipolar Transistors (AREA)
KR1019850008603A 1984-11-19 1985-11-18 고속 반도체 장치 KR920002670B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59-242412 1984-11-19
JP59242412A JPS61121358A (ja) 1984-11-19 1984-11-19 高速半導体装置

Publications (2)

Publication Number Publication Date
KR860004468A true KR860004468A (ko) 1986-06-23
KR920002670B1 KR920002670B1 (ko) 1992-03-31

Family

ID=17088741

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850008603A KR920002670B1 (ko) 1984-11-19 1985-11-18 고속 반도체 장치

Country Status (4)

Country Link
EP (1) EP0186301B1 (ko)
JP (1) JPS61121358A (ko)
KR (1) KR920002670B1 (ko)
DE (1) DE3575814D1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6158268A (ja) * 1984-08-30 1986-03-25 Fujitsu Ltd 高速半導体装置
US4691215A (en) * 1985-01-09 1987-09-01 American Telephone And Telegraph Company Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter
US4912539A (en) * 1988-08-05 1990-03-27 The University Of Michigan Narrow-band-gap base transistor structure with dual collector-base barrier including a graded barrier
JPH02210878A (ja) * 1989-02-10 1990-08-22 Yokogawa Electric Corp ホットエレクトロントランジスタ
JP2731089B2 (ja) * 1991-10-02 1998-03-25 三菱電機株式会社 高速動作半導体装置およびその製造方法
KR0170181B1 (ko) * 1994-12-19 1999-02-01 정선종 공진 터널링 핫 전자 트랜지스터
DE19824111A1 (de) * 1998-05-29 1999-12-02 Daimler Chrysler Ag Resonanz Phasen Transistor mit gegenphasiger Ladungsträgerinjektion

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4353081A (en) * 1980-01-29 1982-10-05 Bell Telephone Laboratories, Incorporated Graded bandgap rectifying semiconductor devices

Also Published As

Publication number Publication date
EP0186301A1 (en) 1986-07-02
EP0186301B1 (en) 1990-01-31
JPH0458707B2 (ko) 1992-09-18
DE3575814D1 (de) 1990-03-08
KR920002670B1 (ko) 1992-03-31
JPS61121358A (ja) 1986-06-09

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Legal Events

Date Code Title Description
A201 Request for examination
E601 Decision to refuse application
E902 Notification of reason for refusal
J2X1 Appeal (before the patent court)

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G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee