DE3575814D1 - Halbleiteranordnung mit grosser geschwindigkeit. - Google Patents

Halbleiteranordnung mit grosser geschwindigkeit.

Info

Publication number
DE3575814D1
DE3575814D1 DE8585308371T DE3575814T DE3575814D1 DE 3575814 D1 DE3575814 D1 DE 3575814D1 DE 8585308371 T DE8585308371 T DE 8585308371T DE 3575814 T DE3575814 T DE 3575814T DE 3575814 D1 DE3575814 D1 DE 3575814D1
Authority
DE
Germany
Prior art keywords
high speed
semiconductor arrangement
semiconductor
arrangement
speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585308371T
Other languages
English (en)
Inventor
Kenichi Imamura
Naoki Yokoyama
Toshio Ohshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3575814D1 publication Critical patent/DE3575814D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Bipolar Transistors (AREA)
DE8585308371T 1984-11-19 1985-11-18 Halbleiteranordnung mit grosser geschwindigkeit. Expired - Fee Related DE3575814D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59242412A JPS61121358A (ja) 1984-11-19 1984-11-19 高速半導体装置

Publications (1)

Publication Number Publication Date
DE3575814D1 true DE3575814D1 (de) 1990-03-08

Family

ID=17088741

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585308371T Expired - Fee Related DE3575814D1 (de) 1984-11-19 1985-11-18 Halbleiteranordnung mit grosser geschwindigkeit.

Country Status (4)

Country Link
EP (1) EP0186301B1 (de)
JP (1) JPS61121358A (de)
KR (1) KR920002670B1 (de)
DE (1) DE3575814D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6158268A (ja) * 1984-08-30 1986-03-25 Fujitsu Ltd 高速半導体装置
US4691215A (en) * 1985-01-09 1987-09-01 American Telephone And Telegraph Company Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter
US4912539A (en) * 1988-08-05 1990-03-27 The University Of Michigan Narrow-band-gap base transistor structure with dual collector-base barrier including a graded barrier
JPH02210878A (ja) * 1989-02-10 1990-08-22 Yokogawa Electric Corp ホットエレクトロントランジスタ
JP2731089B2 (ja) * 1991-10-02 1998-03-25 三菱電機株式会社 高速動作半導体装置およびその製造方法
KR0170181B1 (ko) * 1994-12-19 1999-02-01 정선종 공진 터널링 핫 전자 트랜지스터
DE19824111A1 (de) * 1998-05-29 1999-12-02 Daimler Chrysler Ag Resonanz Phasen Transistor mit gegenphasiger Ladungsträgerinjektion

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4353081A (en) * 1980-01-29 1982-10-05 Bell Telephone Laboratories, Incorporated Graded bandgap rectifying semiconductor devices

Also Published As

Publication number Publication date
KR860004468A (ko) 1986-06-23
EP0186301A1 (de) 1986-07-02
EP0186301B1 (de) 1990-01-31
JPH0458707B2 (de) 1992-09-18
JPS61121358A (ja) 1986-06-09
KR920002670B1 (ko) 1992-03-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee