FR2644934A1 - Procede de fabrication d'un composant tel qu'une eeprom flash, permettant de reduire les effets de la degradation associee aux cycles repetes d'utilisation de ce composant - Google Patents

Procede de fabrication d'un composant tel qu'une eeprom flash, permettant de reduire les effets de la degradation associee aux cycles repetes d'utilisation de ce composant Download PDF

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Publication number
FR2644934A1
FR2644934A1 FR9003536A FR9003536A FR2644934A1 FR 2644934 A1 FR2644934 A1 FR 2644934A1 FR 9003536 A FR9003536 A FR 9003536A FR 9003536 A FR9003536 A FR 9003536A FR 2644934 A1 FR2644934 A1 FR 2644934A1
Authority
FR
France
Prior art keywords
layer
component
metal
titanium
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR9003536A
Other languages
English (en)
French (fr)
Inventor
Stefan K Lai
Daniel N Tang
Simon Y Wang
Susan L Kao
Baylor B Triplett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of FR2644934A1 publication Critical patent/FR2644934A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Junction Field-Effect Transistors (AREA)
FR9003536A 1989-03-22 1990-03-20 Procede de fabrication d'un composant tel qu'une eeprom flash, permettant de reduire les effets de la degradation associee aux cycles repetes d'utilisation de ce composant Withdrawn FR2644934A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32730289A 1989-03-22 1989-03-22

Publications (1)

Publication Number Publication Date
FR2644934A1 true FR2644934A1 (fr) 1990-09-28

Family

ID=23276001

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9003536A Withdrawn FR2644934A1 (fr) 1989-03-22 1990-03-20 Procede de fabrication d'un composant tel qu'une eeprom flash, permettant de reduire les effets de la degradation associee aux cycles repetes d'utilisation de ce composant

Country Status (6)

Country Link
JP (1) JPH02281663A (ja)
DE (1) DE4007895C2 (ja)
FR (1) FR2644934A1 (ja)
GB (1) GB2229575B (ja)
HK (1) HK1000976A1 (ja)
IT (1) IT1239459B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960015322B1 (ko) * 1993-07-23 1996-11-07 현대전자산업 주식회사 차폐용 플레이트를 갖는 반도체소자 제조방법
JP2003297956A (ja) 2002-04-04 2003-10-17 Toshiba Corp 半導体記憶装置及びその製造方法
JP4212299B2 (ja) 2002-05-09 2009-01-21 株式会社東芝 不揮発性半導体記憶装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4288256A (en) * 1977-12-23 1981-09-08 International Business Machines Corporation Method of making FET containing stacked gates
GB2156586A (en) * 1984-02-24 1985-10-09 Hitachi Ltd A semiconductor device with an insulated gate and an adjacent dense insulation layer
US4566026A (en) * 1984-04-25 1986-01-21 Honeywell Inc. Integrated circuit bimetal layer
EP0260232A2 (en) * 1986-08-28 1988-03-16 STMicroelectronics S.r.l. Process for making metal-semiconductor ohmic contacts
GB2206234A (en) * 1987-06-22 1988-12-29 Standard Microsyst Smc Multilayer metallization method for integrated circuits

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879746A (en) * 1972-05-30 1975-04-22 Bell Telephone Labor Inc Gate metallization structure
WO1981000487A1 (en) * 1979-08-13 1981-02-19 Ncr Co Hydrogen annealing process for silicon gate memory device
US4743564A (en) * 1984-12-28 1988-05-10 Kabushiki Kaisha Toshiba Method for manufacturing a complementary MOS type semiconductor device
JPS62143476A (ja) * 1985-12-18 1987-06-26 Fujitsu Ltd 半導体記憶装置
US4707721A (en) * 1986-02-20 1987-11-17 Texas Instruments Incorporated Passivated dual dielectric gate system and method for fabricating same
CA1306072C (en) * 1987-03-30 1992-08-04 John E. Cronin Refractory metal - titanium nitride conductive structures and processes for forming the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4288256A (en) * 1977-12-23 1981-09-08 International Business Machines Corporation Method of making FET containing stacked gates
GB2156586A (en) * 1984-02-24 1985-10-09 Hitachi Ltd A semiconductor device with an insulated gate and an adjacent dense insulation layer
US4566026A (en) * 1984-04-25 1986-01-21 Honeywell Inc. Integrated circuit bimetal layer
EP0260232A2 (en) * 1986-08-28 1988-03-16 STMicroelectronics S.r.l. Process for making metal-semiconductor ohmic contacts
GB2206234A (en) * 1987-06-22 1988-12-29 Standard Microsyst Smc Multilayer metallization method for integrated circuits

Also Published As

Publication number Publication date
JPH02281663A (ja) 1990-11-19
GB2229575B (en) 1993-05-12
DE4007895C2 (de) 2000-03-30
IT9019716A0 (it) 1990-03-19
IT9019716A1 (it) 1991-09-19
GB9000360D0 (en) 1990-03-07
IT1239459B (it) 1993-11-02
HK1000976A1 (en) 1998-05-15
DE4007895A1 (de) 1990-09-27
GB2229575A (en) 1990-09-26

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