GB2229575B - Method of reducing hot-electron degradation in semiconductor devices - Google Patents

Method of reducing hot-electron degradation in semiconductor devices

Info

Publication number
GB2229575B
GB2229575B GB9000360A GB9000360A GB2229575B GB 2229575 B GB2229575 B GB 2229575B GB 9000360 A GB9000360 A GB 9000360A GB 9000360 A GB9000360 A GB 9000360A GB 2229575 B GB2229575 B GB 2229575B
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
reducing hot
electron degradation
degradation
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9000360A
Other languages
English (en)
Other versions
GB9000360D0 (en
GB2229575A (en
Inventor
Stefan K Lai
Daniel N Tang
Simon Y Wang
Susan L Kao
Baylor B Triplett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of GB9000360D0 publication Critical patent/GB9000360D0/en
Publication of GB2229575A publication Critical patent/GB2229575A/en
Application granted granted Critical
Publication of GB2229575B publication Critical patent/GB2229575B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Junction Field-Effect Transistors (AREA)
GB9000360A 1989-03-22 1990-01-08 Method of reducing hot-electron degradation in semiconductor devices Expired - Lifetime GB2229575B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32730289A 1989-03-22 1989-03-22

Publications (3)

Publication Number Publication Date
GB9000360D0 GB9000360D0 (en) 1990-03-07
GB2229575A GB2229575A (en) 1990-09-26
GB2229575B true GB2229575B (en) 1993-05-12

Family

ID=23276001

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9000360A Expired - Lifetime GB2229575B (en) 1989-03-22 1990-01-08 Method of reducing hot-electron degradation in semiconductor devices

Country Status (6)

Country Link
JP (1) JPH02281663A (ja)
DE (1) DE4007895C2 (ja)
FR (1) FR2644934A1 (ja)
GB (1) GB2229575B (ja)
HK (1) HK1000976A1 (ja)
IT (1) IT1239459B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960015322B1 (ko) * 1993-07-23 1996-11-07 현대전자산업 주식회사 차폐용 플레이트를 갖는 반도체소자 제조방법
JP2003297956A (ja) 2002-04-04 2003-10-17 Toshiba Corp 半導体記憶装置及びその製造方法
JP4212299B2 (ja) 2002-05-09 2009-01-21 株式会社東芝 不揮発性半導体記憶装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879746A (en) * 1972-05-30 1975-04-22 Bell Telephone Labor Inc Gate metallization structure
WO1981000487A1 (en) * 1979-08-13 1981-02-19 Ncr Co Hydrogen annealing process for silicon gate memory device
EP0227549A2 (en) * 1985-12-18 1987-07-01 Fujitsu Limited Semiconductor memory device including read only memory element for storing fixed information
US4707721A (en) * 1986-02-20 1987-11-17 Texas Instruments Incorporated Passivated dual dielectric gate system and method for fabricating same
EP0284794A1 (en) * 1987-03-30 1988-10-05 International Business Machines Corporation Refractory metal - titanium nitride conductive structures and processes for forming the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4288256A (en) * 1977-12-23 1981-09-08 International Business Machines Corporation Method of making FET containing stacked gates
JP2515715B2 (ja) * 1984-02-24 1996-07-10 株式会社日立製作所 半導体集積回路装置の製造方法
US4566026A (en) * 1984-04-25 1986-01-21 Honeywell Inc. Integrated circuit bimetal layer
US4743564A (en) * 1984-12-28 1988-05-10 Kabushiki Kaisha Toshiba Method for manufacturing a complementary MOS type semiconductor device
IT1201840B (it) * 1986-08-28 1989-02-02 Sgs Microelettronica Spa Procedimento per realizzare contatti ohmici metallo-semiconduttore
US4824803A (en) * 1987-06-22 1989-04-25 Standard Microsystems Corporation Multilayer metallization method for integrated circuits

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879746A (en) * 1972-05-30 1975-04-22 Bell Telephone Labor Inc Gate metallization structure
WO1981000487A1 (en) * 1979-08-13 1981-02-19 Ncr Co Hydrogen annealing process for silicon gate memory device
EP0227549A2 (en) * 1985-12-18 1987-07-01 Fujitsu Limited Semiconductor memory device including read only memory element for storing fixed information
US4707721A (en) * 1986-02-20 1987-11-17 Texas Instruments Incorporated Passivated dual dielectric gate system and method for fabricating same
EP0284794A1 (en) * 1987-03-30 1988-10-05 International Business Machines Corporation Refractory metal - titanium nitride conductive structures and processes for forming the same

Also Published As

Publication number Publication date
DE4007895C2 (de) 2000-03-30
IT9019716A0 (it) 1990-03-19
IT1239459B (it) 1993-11-02
HK1000976A1 (en) 1998-05-15
FR2644934A1 (fr) 1990-09-28
GB9000360D0 (en) 1990-03-07
GB2229575A (en) 1990-09-26
IT9019716A1 (it) 1991-09-19
JPH02281663A (ja) 1990-11-19
DE4007895A1 (de) 1990-09-27

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20100107