FR2618947B1 - Circuit integre a semi-conducteur comprenant des transistors a effets de champ - Google Patents

Circuit integre a semi-conducteur comprenant des transistors a effets de champ

Info

Publication number
FR2618947B1
FR2618947B1 FR8810129A FR8810129A FR2618947B1 FR 2618947 B1 FR2618947 B1 FR 2618947B1 FR 8810129 A FR8810129 A FR 8810129A FR 8810129 A FR8810129 A FR 8810129A FR 2618947 B1 FR2618947 B1 FR 2618947B1
Authority
FR
France
Prior art keywords
field effect
effect transistors
semiconductor circuit
integrated semiconductor
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8810129A
Other languages
English (en)
Other versions
FR2618947A1 (fr
Inventor
Hiroshi Matsuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2618947A1 publication Critical patent/FR2618947A1/fr
Application granted granted Critical
Publication of FR2618947B1 publication Critical patent/FR2618947B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR8810129A 1987-07-28 1988-07-27 Circuit integre a semi-conducteur comprenant des transistors a effets de champ Expired - Fee Related FR2618947B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62189379A JPH0821595B2 (ja) 1987-07-28 1987-07-28 半導体装置

Publications (2)

Publication Number Publication Date
FR2618947A1 FR2618947A1 (fr) 1989-02-03
FR2618947B1 true FR2618947B1 (fr) 1994-04-29

Family

ID=16240331

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8810129A Expired - Fee Related FR2618947B1 (fr) 1987-07-28 1988-07-27 Circuit integre a semi-conducteur comprenant des transistors a effets de champ

Country Status (4)

Country Link
US (1) US4908680A (fr)
JP (1) JPH0821595B2 (fr)
FR (1) FR2618947B1 (fr)
GB (1) GB2208452B (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5086322A (en) * 1988-10-19 1992-02-04 Mitsubishi Denki Kabushiki Kaisha Input protection circuit and output driver circuit comprising mis semiconductor device
US5227738A (en) * 1990-11-27 1993-07-13 Sumitomo Electric Industries, Ltd. Multistage amplifier
JPH04192805A (ja) * 1990-11-27 1992-07-13 Sumitomo Electric Ind Ltd 多段アンプ
JPH06181321A (ja) * 1992-12-14 1994-06-28 Nec Corp 半導体装置
JP2580966B2 (ja) * 1993-08-05 1997-02-12 日本電気株式会社 半導体装置
US5514604A (en) * 1993-12-08 1996-05-07 General Electric Company Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making
DE19522364C1 (de) 1995-06-20 1996-07-04 Siemens Ag Halbleiter-Bauelement
US6297533B1 (en) * 1997-12-04 2001-10-02 The Whitaker Corporation LDMOS structure with via grounded source
EP1585193B1 (fr) 2002-10-23 2008-01-09 Sony Corporation Antenne à large bande
CN103633046B (zh) * 2013-12-13 2017-03-15 苏州能讯高能半导体有限公司 半导体器件及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969745A (en) * 1974-09-18 1976-07-13 Texas Instruments Incorporated Interconnection in multi element planar structures
IT8048031A0 (it) * 1979-04-09 1980-02-28 Raytheon Co Perfezionamento nei dispositivi a semiconduttore ad effetto di campo
US4313126A (en) * 1979-05-21 1982-01-26 Raytheon Company Field effect transistor
JPS5678267U (fr) * 1979-11-07 1981-06-25
JPS62186569A (ja) * 1986-02-12 1987-08-14 Nec Corp 電界効果型トランジスタの製造方法

Also Published As

Publication number Publication date
GB2208452A (en) 1989-03-30
JPS6432681A (en) 1989-02-02
US4908680A (en) 1990-03-13
JPH0821595B2 (ja) 1996-03-04
GB8818025D0 (en) 1988-09-01
FR2618947A1 (fr) 1989-02-03
GB2208452B (en) 1991-01-16

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Legal Events

Date Code Title Description
ST Notification of lapse