FR2548450B1 - Procede de fabrication de diode en film mince ultra-miniature - Google Patents

Procede de fabrication de diode en film mince ultra-miniature

Info

Publication number
FR2548450B1
FR2548450B1 FR8410296A FR8410296A FR2548450B1 FR 2548450 B1 FR2548450 B1 FR 2548450B1 FR 8410296 A FR8410296 A FR 8410296A FR 8410296 A FR8410296 A FR 8410296A FR 2548450 B1 FR2548450 B1 FR 2548450B1
Authority
FR
France
Prior art keywords
thin film
film diode
manufacturing ultra
miniature thin
miniature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8410296A
Other languages
English (en)
Other versions
FR2548450A1 (fr
Inventor
Kazuaki Soremachi
Etsuo Yamamoto
Hiroshi Tanabe
Katsumi Aota
Kanetaka Sekiguchi
Seigo Togashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58117488A external-priority patent/JPH0652794B2/ja
Priority claimed from JP58122205A external-priority patent/JPS6014468A/ja
Priority claimed from JP58136162A external-priority patent/JPS6028276A/ja
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Publication of FR2548450A1 publication Critical patent/FR2548450A1/fr
Application granted granted Critical
Publication of FR2548450B1 publication Critical patent/FR2548450B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
FR8410296A 1983-06-29 1984-06-29 Procede de fabrication de diode en film mince ultra-miniature Expired FR2548450B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP58117488A JPH0652794B2 (ja) 1983-06-29 1983-06-29 薄膜ダイオードの製造方法
JP58122205A JPS6014468A (ja) 1983-07-05 1983-07-05 薄膜ダイオ−ド
JP58136162A JPS6028276A (ja) 1983-07-26 1983-07-26 薄膜ダイオ−ドの製造方法

Publications (2)

Publication Number Publication Date
FR2548450A1 FR2548450A1 (fr) 1985-01-04
FR2548450B1 true FR2548450B1 (fr) 1987-04-30

Family

ID=27313386

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8410296A Expired FR2548450B1 (fr) 1983-06-29 1984-06-29 Procede de fabrication de diode en film mince ultra-miniature

Country Status (3)

Country Link
DE (1) DE3424085A1 (fr)
FR (1) FR2548450B1 (fr)
GB (1) GB2144266B (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2579775B1 (fr) * 1985-04-02 1987-05-15 Thomson Csf Procede de realisation d'elements de commande non lineaire pour ecran plat de visualisation electro-optique et ecran plat realise selon ce procede
FR2579809B1 (fr) * 1985-04-02 1987-05-15 Thomson Csf Procede de realisation de matrices decommande a diodes pour ecran plat de visualisation electro-optique et ecran plat realise par ce procede
FR2581781B1 (fr) * 1985-05-07 1987-06-12 Thomson Csf Elements de commande non lineaire pour ecran plat de visualisation electrooptique et son procede de fabrication
NL8702490A (nl) * 1987-10-19 1989-05-16 Philips Nv Weergeefinrichting met laterale schottky-dioden.
NL8802409A (nl) * 1988-09-30 1990-04-17 Philips Nv Weergeefinrichting, steunplaat voorzien van diode en geschikt voor de weergeefinrichting en werkwijze ter vervaardiging van de steunplaat.
FR2714765B1 (fr) * 1993-12-30 1996-02-02 France Telecom Procédé de réalisation d'une connexion électrique entre deux couches conductrices.
DE4410799C2 (de) * 1994-03-29 1996-02-08 Forschungszentrum Juelich Gmbh Diode
GB2304993B (en) * 1995-08-23 1997-08-06 Toshiba Cambridge Res Center Semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4174217A (en) * 1974-08-02 1979-11-13 Rca Corporation Method for making semiconductor structure
US4425379A (en) * 1981-02-11 1984-01-10 Fairchild Camera & Instrument Corporation Polycrystalline silicon Schottky diode array
EP0071244B1 (fr) * 1981-07-27 1988-11-23 Kabushiki Kaisha Toshiba Transistor à couche mince et procédé de fabrication
US4642620A (en) * 1982-09-27 1987-02-10 Citizen Watch Company Limited Matrix display device

Also Published As

Publication number Publication date
FR2548450A1 (fr) 1985-01-04
GB2144266A (en) 1985-02-27
DE3424085C2 (fr) 1989-05-03
GB2144266B (en) 1987-03-18
DE3424085A1 (de) 1985-01-17
GB8416632D0 (en) 1984-08-01

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Legal Events

Date Code Title Description
ST Notification of lapse