FR2526449B1 - Procede et dispositif de fabrication d'un monocristal, exempt de toute contrainte, d'un compose ferroelectrique a structure cristalline - Google Patents
Procede et dispositif de fabrication d'un monocristal, exempt de toute contrainte, d'un compose ferroelectrique a structure cristallineInfo
- Publication number
- FR2526449B1 FR2526449B1 FR8207727A FR8207727A FR2526449B1 FR 2526449 B1 FR2526449 B1 FR 2526449B1 FR 8207727 A FR8207727 A FR 8207727A FR 8207727 A FR8207727 A FR 8207727A FR 2526449 B1 FR2526449 B1 FR 2526449B1
- Authority
- FR
- France
- Prior art keywords
- constraint
- free
- manufacturing
- single crystal
- crystalline structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/918—Single-crystal waveguide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Inorganic Insulating Materials (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8207727A FR2526449B1 (fr) | 1982-05-04 | 1982-05-04 | Procede et dispositif de fabrication d'un monocristal, exempt de toute contrainte, d'un compose ferroelectrique a structure cristalline |
GB08311327A GB2119673B (en) | 1982-05-04 | 1983-04-26 | Process and apparatus for producing a strain free monocrystal of a crystalline ferroelectric compound |
US06/489,416 US4623423A (en) | 1982-05-04 | 1983-04-28 | Process for producing a strain-free monocrystal of a crystalline ferroelectric compound |
JP58078841A JPS58204896A (ja) | 1982-05-04 | 1983-05-04 | 結晶性強誘電性化合物からなる歪のない単結晶を製造するための方法及び装置 |
US06/900,777 US4752451A (en) | 1982-05-04 | 1986-08-27 | Apparatus for producing a strain-free monocrystal of a crystalline ferroelectric compound |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8207727A FR2526449B1 (fr) | 1982-05-04 | 1982-05-04 | Procede et dispositif de fabrication d'un monocristal, exempt de toute contrainte, d'un compose ferroelectrique a structure cristalline |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2526449A1 FR2526449A1 (fr) | 1983-11-10 |
FR2526449B1 true FR2526449B1 (fr) | 1985-07-05 |
Family
ID=9273703
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8207727A Expired FR2526449B1 (fr) | 1982-05-04 | 1982-05-04 | Procede et dispositif de fabrication d'un monocristal, exempt de toute contrainte, d'un compose ferroelectrique a structure cristalline |
Country Status (4)
Country | Link |
---|---|
US (2) | US4623423A (fr) |
JP (1) | JPS58204896A (fr) |
FR (1) | FR2526449B1 (fr) |
GB (1) | GB2119673B (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0699217B2 (ja) * | 1989-07-31 | 1994-12-07 | 信越半導体株式会社 | 単結晶成長装置 |
US5037621A (en) * | 1989-11-09 | 1991-08-06 | The United States Of America As Represented By The Secretary Of The Army | System for the in-situ visualization of a solid liquid interface during crystal growth |
US5171400A (en) * | 1989-11-29 | 1992-12-15 | Stanford University | Method of producing crystalline rods having regions of reversed dominant ferroelectric polarity and method for clarifying such a rod |
US5134261A (en) * | 1990-03-30 | 1992-07-28 | The United States Of America As Represented By The Secretary Of The Air Force | Apparatus and method for controlling gradients in radio frequency heating |
US5114528A (en) * | 1990-08-07 | 1992-05-19 | Wisconsin Alumni Research Foundation | Edge-defined contact heater apparatus and method for floating zone crystal growth |
JPH06258539A (ja) * | 1993-03-09 | 1994-09-16 | Mitsui Mining & Smelting Co Ltd | ニオブ酸リチウム結晶ウエハおよびその製造方法、並びに評価方法 |
JPH06279170A (ja) * | 1993-03-29 | 1994-10-04 | Sumitomo Sitix Corp | 単結晶の製造方法及びその装置 |
US5394830A (en) * | 1993-08-27 | 1995-03-07 | General Electric Company | Apparatus and method for growing long single crystals in a liquid encapsulated Czochralski process |
TWI236455B (en) * | 2002-02-27 | 2005-07-21 | Univ Nat Taiwan | Method for growing stoichiometric lithium niobate and lithium tantalate single crystals and apparatus thereof |
DE102004058547B4 (de) * | 2004-12-03 | 2007-10-25 | Schott Ag | Verfahren und eine Vorrichtung zur Herstellung von Einkristallen mit großem Durchmesser |
CN108070901A (zh) * | 2016-11-17 | 2018-05-25 | 上海新昇半导体科技有限公司 | 浮区法生长晶体的设备及方法 |
JP2019089671A (ja) * | 2017-11-14 | 2019-06-13 | 住友金属鉱山株式会社 | ニオブ酸リチウム単結晶の育成方法 |
JP6988624B2 (ja) * | 2018-03-23 | 2022-01-05 | 住友金属鉱山株式会社 | ニオブ酸リチウム単結晶の育成方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2879189A (en) * | 1956-11-21 | 1959-03-24 | Shockley William | Method for growing junction semi-conductive devices |
NL275885A (fr) * | 1961-03-14 | |||
DE1233828B (de) * | 1964-07-03 | 1967-02-09 | Wacker Chemie Gmbh | Verfahren zur Herstellung, Reinigung und/oder Dotierung von ein- oder polykristallinen Halbleiterverbindungen |
US3384449A (en) * | 1965-07-07 | 1968-05-21 | Army Usa | Method of growing single crystals of ba2 zn2 fe12 o22 |
US3346344A (en) * | 1965-07-12 | 1967-10-10 | Bell Telephone Labor Inc | Growth of lithium niobate crystals |
GB1246262A (en) * | 1967-11-16 | 1971-09-15 | Haldor Frederik Axel Topsoe | Improvements relating to zone-melting |
US3939035A (en) * | 1971-03-31 | 1976-02-17 | Siemens Aktiengesellschaft | Method of producing monocrystalline semiconductor material, particularly silicon, with adjustable dislocation density |
US3857679A (en) * | 1973-02-05 | 1974-12-31 | Univ Southern California | Crystal grower |
JPS511679B2 (fr) * | 1973-04-26 | 1976-01-19 | ||
FR2313778A1 (fr) * | 1975-06-06 | 1976-12-31 | Comp Generale Electricite | Procede d'elaboration d'un monocristal d'un materiau ferroelectrique |
JPS5912632B2 (ja) * | 1975-11-22 | 1984-03-24 | 住友電気工業株式会社 | タンケツシヨウノヒキアゲソウチ |
JPS545877A (en) * | 1977-06-16 | 1979-01-17 | Toshiba Corp | Crystal growing device |
JPS5628873A (en) * | 1979-08-20 | 1981-03-23 | Nippon Kayaku Co Ltd | Thermosensitive ink printer |
US4360289A (en) * | 1980-06-30 | 1982-11-23 | International Business Machines Corporation | Pin for brazing to a substrate and improved package resulting therefrom |
JPS57179094A (en) * | 1981-04-28 | 1982-11-04 | Tohoku Metal Ind Ltd | Method and apparatus for manufacturing single crystal |
JPS59227796A (ja) * | 1983-06-08 | 1984-12-21 | Matsushita Electric Ind Co Ltd | 酸化物単結晶の製造方法 |
-
1982
- 1982-05-04 FR FR8207727A patent/FR2526449B1/fr not_active Expired
-
1983
- 1983-04-26 GB GB08311327A patent/GB2119673B/en not_active Expired
- 1983-04-28 US US06/489,416 patent/US4623423A/en not_active Expired - Fee Related
- 1983-05-04 JP JP58078841A patent/JPS58204896A/ja active Pending
-
1986
- 1986-08-27 US US06/900,777 patent/US4752451A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2119673B (en) | 1985-07-10 |
FR2526449A1 (fr) | 1983-11-10 |
GB8311327D0 (en) | 1983-06-02 |
JPS58204896A (ja) | 1983-11-29 |
GB2119673A (en) | 1983-11-23 |
US4752451A (en) | 1988-06-21 |
US4623423A (en) | 1986-11-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |