FR2525031B1 - Dispositif a semi-conducteur dont le semi-conducteur est forme sur un substrat isolant et son procede de fabrication - Google Patents

Dispositif a semi-conducteur dont le semi-conducteur est forme sur un substrat isolant et son procede de fabrication

Info

Publication number
FR2525031B1
FR2525031B1 FR8305967A FR8305967A FR2525031B1 FR 2525031 B1 FR2525031 B1 FR 2525031B1 FR 8305967 A FR8305967 A FR 8305967A FR 8305967 A FR8305967 A FR 8305967A FR 2525031 B1 FR2525031 B1 FR 2525031B1
Authority
FR
France
Prior art keywords
semiconductor
manufacturing
insulating substrate
semiconductor device
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8305967A
Other languages
English (en)
French (fr)
Other versions
FR2525031A1 (fr
Inventor
Junichi Ohno
Takao Ohta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of FR2525031A1 publication Critical patent/FR2525031A1/fr
Application granted granted Critical
Publication of FR2525031B1 publication Critical patent/FR2525031B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H10P14/6322—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H10P14/69396—
    • H10P30/209—
    • H10P90/1906—
    • H10W10/061—
    • H10W10/181—
    • H10P90/1912—
    • H10W10/012—
    • H10W10/13—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/077—Implantation of silicon on sapphire
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
FR8305967A 1982-04-12 1983-04-12 Dispositif a semi-conducteur dont le semi-conducteur est forme sur un substrat isolant et son procede de fabrication Expired FR2525031B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57060536A JPS58176967A (ja) 1982-04-12 1982-04-12 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
FR2525031A1 FR2525031A1 (fr) 1983-10-14
FR2525031B1 true FR2525031B1 (fr) 1987-01-30

Family

ID=13145117

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8305967A Expired FR2525031B1 (fr) 1982-04-12 1983-04-12 Dispositif a semi-conducteur dont le semi-conducteur est forme sur un substrat isolant et son procede de fabrication

Country Status (4)

Country Link
US (1) US4494996A (cg-RX-API-DMAC10.html)
JP (1) JPS58176967A (cg-RX-API-DMAC10.html)
DE (1) DE3313163A1 (cg-RX-API-DMAC10.html)
FR (1) FR2525031B1 (cg-RX-API-DMAC10.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USH569H (en) 1984-09-28 1989-01-03 Motorola Inc. Charge storage depletion region discharge protection
JPS62500340A (ja) * 1984-09-28 1987-02-05 モトロ−ラ・インコ−ポレ−テツド 電荷蓄積空乏領域放電保護装置及び方法
US4733482A (en) * 1987-04-07 1988-03-29 Hughes Microelectronics Limited EEPROM with metal doped insulator
US5024965A (en) * 1990-02-16 1991-06-18 Chang Chen Chi P Manufacturing high speed low leakage radiation hardened CMOS/SOI devices
US5643804A (en) 1993-05-21 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a hybrid integrated circuit component having a laminated body
RU2130668C1 (ru) * 1994-09-30 1999-05-20 Акционерное общество закрытого типа "VL" Полевой транзистор типа металл - диэлектрик-полупроводник
US7858459B2 (en) 2007-04-20 2010-12-28 Texas Instruments Incorporated Work function adjustment with the implant of lanthanides
US7807522B2 (en) * 2006-12-28 2010-10-05 Texas Instruments Incorporated Lanthanide series metal implant to control work function of metal gate electrodes

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6614657A (cg-RX-API-DMAC10.html) * 1966-02-11 1967-08-14
IT7826422A0 (it) * 1977-09-22 1978-08-02 Rca Corp Circuito integrato planare a silicio su zaffiro (sos) e metodo per la fabbricazione dello stesso.
JPS5721856B2 (en) * 1977-11-28 1982-05-10 Nippon Telegraph & Telephone Semiconductor and its manufacture
US4177084A (en) * 1978-06-09 1979-12-04 Hewlett-Packard Company Method for producing a low defect layer of silicon-on-sapphire wafer
US4178191A (en) * 1978-08-10 1979-12-11 Rca Corp. Process of making a planar MOS silicon-on-insulating substrate device

Also Published As

Publication number Publication date
DE3313163C2 (cg-RX-API-DMAC10.html) 1987-07-30
JPS58176967A (ja) 1983-10-17
FR2525031A1 (fr) 1983-10-14
DE3313163A1 (de) 1983-10-20
JPH0258786B2 (cg-RX-API-DMAC10.html) 1990-12-10
US4494996A (en) 1985-01-22

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Legal Events

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CD Change of name or company name
ST Notification of lapse