FR2511539B1 - Dispositif de memoire remanente - Google Patents

Dispositif de memoire remanente

Info

Publication number
FR2511539B1
FR2511539B1 FR828213877A FR8213877A FR2511539B1 FR 2511539 B1 FR2511539 B1 FR 2511539B1 FR 828213877 A FR828213877 A FR 828213877A FR 8213877 A FR8213877 A FR 8213877A FR 2511539 B1 FR2511539 B1 FR 2511539B1
Authority
FR
France
Prior art keywords
memory device
remanent memory
remanent
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR828213877A
Other languages
English (en)
Other versions
FR2511539A1 (fr
Inventor
Kazuhiro Komori
Satoshi Meguro
Satoru Ito
Toshimasa Kihara
Harumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56125204A external-priority patent/JPS5827372A/ja
Priority claimed from JP56125189A external-priority patent/JPS5827371A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2511539A1 publication Critical patent/FR2511539A1/fr
Application granted granted Critical
Publication of FR2511539B1 publication Critical patent/FR2511539B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR828213877A 1981-08-12 1982-08-09 Dispositif de memoire remanente Expired FR2511539B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56125204A JPS5827372A (ja) 1981-08-12 1981-08-12 不揮発性メモリ装置
JP56125189A JPS5827371A (ja) 1981-08-12 1981-08-12 不揮発性メモリ装置

Publications (2)

Publication Number Publication Date
FR2511539A1 FR2511539A1 (fr) 1983-02-18
FR2511539B1 true FR2511539B1 (fr) 1989-04-28

Family

ID=26461697

Family Applications (1)

Application Number Title Priority Date Filing Date
FR828213877A Expired FR2511539B1 (fr) 1981-08-12 1982-08-09 Dispositif de memoire remanente

Country Status (9)

Country Link
US (1) US4653026A (fr)
KR (1) KR900007742B1 (fr)
DE (1) DE3230067A1 (fr)
FR (1) FR2511539B1 (fr)
GB (1) GB2103880B (fr)
HK (1) HK45586A (fr)
IT (1) IT1159085B (fr)
MY (1) MY8600579A (fr)
SG (1) SG27186G (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4516313A (en) * 1983-05-27 1985-05-14 Ncr Corporation Unified CMOS/SNOS semiconductor fabrication process
JPS61135165A (ja) * 1984-12-05 1986-06-23 Mitsubishi Electric Corp 半導体メモリ装置
DE3583669D1 (de) * 1984-12-25 1991-09-05 Toshiba Kawasaki Kk Nichtfluechtige halbleiterspeicheranordnung.
DE3874455T2 (de) * 1987-07-29 1993-04-08 Toshiba Kawasaki Kk Nichtfluechtiger halbleiterspeicher.
JP2748070B2 (ja) * 1992-05-20 1998-05-06 三菱電機株式会社 半導体装置およびその製造方法
BE1008052A3 (nl) * 1994-01-31 1996-01-03 Philips Electronics Nv Halfgeleiderinrichting.
KR0172422B1 (ko) * 1995-06-30 1999-03-30 김광호 스냅백 브레이크다운 현상을 제거한 공통 소오스 라인 제어회로
KR100339019B1 (ko) * 1999-05-31 2002-05-31 윤종용 차동 신호 배선 방법 및 차동 신호 배선을 갖는 인쇄회로기판이 실장된 액정 표시 장치
US20130292756A1 (en) * 2012-05-03 2013-11-07 Globalfoundries Singapore Pte. Ltd. Method and apparatus for utilizing contact-sidewall capacitance in a single poly non-volatile memory cell

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2103573A1 (de) * 1971-01-26 1972-08-03 Siemens Ag Integriertes Halbleiterbauelement, insbesondere verlustarmes Speicherelement, in Komplementärkanal-Technik
DE2503864C3 (de) * 1975-01-30 1981-09-24 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
US4139785A (en) * 1977-05-31 1979-02-13 Texas Instruments Incorporated Static memory cell with inverted field effect transistor
JPS6025837B2 (ja) * 1978-09-14 1985-06-20 株式会社東芝 半導体記憶装置
DE2947311C2 (de) * 1978-11-24 1982-04-01 Hitachi, Ltd., Tokyo Integrierte Halbleiterschaltung
US4267558A (en) * 1979-01-05 1981-05-12 Texas Instruments Incorporated Electrically erasable memory with self-limiting erase
JPS5654693A (en) * 1979-10-05 1981-05-14 Hitachi Ltd Programable rom
US4281397A (en) * 1979-10-29 1981-07-28 Texas Instruments Incorporated Virtual ground MOS EPROM or ROM matrix

Also Published As

Publication number Publication date
GB2103880B (en) 1985-05-30
SG27186G (en) 1987-03-27
IT8222819A0 (it) 1982-08-11
DE3230067A1 (de) 1983-03-03
GB2103880A (en) 1983-02-23
IT1159085B (it) 1987-02-25
MY8600579A (en) 1986-12-31
HK45586A (en) 1986-06-27
KR900007742B1 (ko) 1990-10-19
KR840001390A (ko) 1984-04-30
FR2511539A1 (fr) 1983-02-18
US4653026A (en) 1987-03-24

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Legal Events

Date Code Title Description
ST Notification of lapse