FR2484709A1 - Perfectionnement a la realisation d'une cellule solaire en vue de neutraliser les risques de mauvais isolement a l'endroit des bords - Google Patents

Perfectionnement a la realisation d'une cellule solaire en vue de neutraliser les risques de mauvais isolement a l'endroit des bords Download PDF

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Publication number
FR2484709A1
FR2484709A1 FR8013321A FR8013321A FR2484709A1 FR 2484709 A1 FR2484709 A1 FR 2484709A1 FR 8013321 A FR8013321 A FR 8013321A FR 8013321 A FR8013321 A FR 8013321A FR 2484709 A1 FR2484709 A1 FR 2484709A1
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FR
France
Prior art keywords
deposit
wafer
face
type
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8013321A
Other languages
English (en)
French (fr)
Other versions
FR2484709B1 (enExample
Inventor
Gerard Robert David
Daniel Pincon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR8013321A priority Critical patent/FR2484709A1/fr
Priority to US06/268,454 priority patent/US4377901A/en
Priority to DE19813122771 priority patent/DE3122771A1/de
Priority to CA000379586A priority patent/CA1176739A/en
Priority to GB8118082A priority patent/GB2077996B/en
Priority to JP9100981A priority patent/JPS5727076A/ja
Publication of FR2484709A1 publication Critical patent/FR2484709A1/fr
Application granted granted Critical
Publication of FR2484709B1 publication Critical patent/FR2484709B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
FR8013321A 1980-06-16 1980-06-16 Perfectionnement a la realisation d'une cellule solaire en vue de neutraliser les risques de mauvais isolement a l'endroit des bords Granted FR2484709A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR8013321A FR2484709A1 (fr) 1980-06-16 1980-06-16 Perfectionnement a la realisation d'une cellule solaire en vue de neutraliser les risques de mauvais isolement a l'endroit des bords
US06/268,454 US4377901A (en) 1980-06-16 1981-05-29 Method of manufacturing solar cells
DE19813122771 DE3122771A1 (de) 1980-06-16 1981-06-09 "verfahren zur herstellung von sonnenzellen"
CA000379586A CA1176739A (en) 1980-06-16 1981-06-11 Method of manufacturing solar cells
GB8118082A GB2077996B (en) 1980-06-16 1981-06-12 Method of manufacturing solar cells
JP9100981A JPS5727076A (en) 1980-06-16 1981-06-15 Method of producing solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8013321A FR2484709A1 (fr) 1980-06-16 1980-06-16 Perfectionnement a la realisation d'une cellule solaire en vue de neutraliser les risques de mauvais isolement a l'endroit des bords

Publications (2)

Publication Number Publication Date
FR2484709A1 true FR2484709A1 (fr) 1981-12-18
FR2484709B1 FR2484709B1 (enExample) 1982-07-16

Family

ID=9243131

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8013321A Granted FR2484709A1 (fr) 1980-06-16 1980-06-16 Perfectionnement a la realisation d'une cellule solaire en vue de neutraliser les risques de mauvais isolement a l'endroit des bords

Country Status (6)

Country Link
US (1) US4377901A (enExample)
JP (1) JPS5727076A (enExample)
CA (1) CA1176739A (enExample)
DE (1) DE3122771A1 (enExample)
FR (1) FR2484709A1 (enExample)
GB (1) GB2077996B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3340874A1 (de) * 1983-11-11 1985-05-23 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum herstellen einer solarzelle
DE4202455C1 (enExample) * 1992-01-29 1993-08-19 Siemens Ag, 8000 Muenchen, De
IT1272665B (it) * 1993-09-23 1997-06-26 Eurosolare Spa Procedimento per la preparazione di moduli fotovoltaici a base di silicio cristallino
JP3722326B2 (ja) * 1996-12-20 2005-11-30 三菱電機株式会社 太陽電池の製造方法
US6552414B1 (en) * 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
AUPP437598A0 (en) * 1998-06-29 1998-07-23 Unisearch Limited A self aligning method for forming a selective emitter and metallization in a solar cell
RU2139601C1 (ru) * 1998-12-04 1999-10-10 ООО Научно-производственная фирма "Кварк" Способ изготовления солнечного элемента с n+-p-p+ структурой
RU2210142C1 (ru) * 2002-04-17 2003-08-10 Общество с ограниченной ответственностью Научно-производственный центр завода "Красное знамя" Способ изготовления солнечного элемента с n+-p-p+ структурой
US7790574B2 (en) 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices
EP1843389B1 (en) * 2006-04-04 2008-08-13 SolarWorld Industries Deutschland GmbH Method of providing doping concentration based on diffusion, surface oxidation and etch-back steps, and method of producing solar cells
NL2003511C2 (en) * 2009-09-18 2011-03-22 Solar Cell Company Holding B V Method for fabricating a photovoltaic cell and a photovoltaic cell obtained using such a method.
FR2959351B1 (fr) * 2010-04-26 2013-11-08 Photowatt Int Procede de preparation d’une structure de type n+pp+ ou de type p+nn+ sur plaques de silicium
CN101882651A (zh) * 2010-07-16 2010-11-10 山东力诺太阳能电力股份有限公司 一种掩膜阻挡边缘扩散的太阳能电池制作工艺
CN102487106A (zh) * 2010-12-02 2012-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 晶体硅太阳能电池及其制造方法
CN102263159A (zh) * 2011-05-31 2011-11-30 江阴鑫辉太阳能有限公司 一种利用硼磷共扩散制备n型太阳电池的工艺
CN104157740B (zh) * 2014-09-03 2017-02-08 苏州阿特斯阳光电力科技有限公司 一种n型双面太阳能电池的制备方法
CN104538485A (zh) * 2014-11-06 2015-04-22 浙江正泰太阳能科技有限公司 一种双面电池的制备方法
CN107425092A (zh) * 2016-05-24 2017-12-01 上海凯世通半导体股份有限公司 双面电池的掺杂方法
CN107425091A (zh) * 2016-05-24 2017-12-01 上海凯世通半导体股份有限公司 双面电池的掺杂方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4199377A (en) * 1979-02-28 1980-04-22 The Boeing Company Solar cell

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3958262A (en) * 1971-03-09 1976-05-18 Innotech Corporation Electrostatic image reproducing element employing an insulating ion impermeable glass
JPS5363993A (en) * 1976-11-19 1978-06-07 Matsushita Electric Ind Co Ltd Production of semiconductor device
US4104091A (en) * 1977-05-20 1978-08-01 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Application of semiconductor diffusants to solar cells by screen printing
US4158591A (en) * 1978-04-24 1979-06-19 Atlantic Richfield Company Solar cell manufacture
US4141811A (en) * 1978-04-24 1979-02-27 Atlantic Richfield Company Plasma etching process for the manufacture of solar cells

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4199377A (en) * 1979-02-28 1980-04-22 The Boeing Company Solar cell

Also Published As

Publication number Publication date
GB2077996B (en) 1984-03-14
JPS5727076A (en) 1982-02-13
US4377901A (en) 1983-03-29
GB2077996A (en) 1981-12-23
DE3122771A1 (de) 1982-05-06
CA1176739A (en) 1984-10-23
FR2484709B1 (enExample) 1982-07-16

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