CA1176739A - Method of manufacturing solar cells - Google Patents
Method of manufacturing solar cellsInfo
- Publication number
- CA1176739A CA1176739A CA000379586A CA379586A CA1176739A CA 1176739 A CA1176739 A CA 1176739A CA 000379586 A CA000379586 A CA 000379586A CA 379586 A CA379586 A CA 379586A CA 1176739 A CA1176739 A CA 1176739A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- glassy layer
- major surface
- glassy
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000002019 doping agent Substances 0.000 claims abstract description 15
- 238000009792 diffusion process Methods 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 34
- 239000002344 surface layer Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000007792 gaseous phase Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 32
- 238000011282 treatment Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 241000478345 Afer Species 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000950314 Figura Species 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 101100508071 Solanum lycopersicum PIIF gene Proteins 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- VOVZXURTCKPRDQ-CQSZACIVSA-N n-[4-[chloro(difluoro)methoxy]phenyl]-6-[(3r)-3-hydroxypyrrolidin-1-yl]-5-(1h-pyrazol-5-yl)pyridine-3-carboxamide Chemical compound C1[C@H](O)CCN1C1=NC=C(C(=O)NC=2C=CC(OC(F)(F)Cl)=CC=2)C=C1C1=CC=NN1 VOVZXURTCKPRDQ-CQSZACIVSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8013321 | 1980-06-16 | ||
| FR8013321A FR2484709A1 (fr) | 1980-06-16 | 1980-06-16 | Perfectionnement a la realisation d'une cellule solaire en vue de neutraliser les risques de mauvais isolement a l'endroit des bords |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1176739A true CA1176739A (en) | 1984-10-23 |
Family
ID=9243131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000379586A Expired CA1176739A (en) | 1980-06-16 | 1981-06-11 | Method of manufacturing solar cells |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4377901A (enExample) |
| JP (1) | JPS5727076A (enExample) |
| CA (1) | CA1176739A (enExample) |
| DE (1) | DE3122771A1 (enExample) |
| FR (1) | FR2484709A1 (enExample) |
| GB (1) | GB2077996B (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3340874A1 (de) * | 1983-11-11 | 1985-05-23 | Telefunken electronic GmbH, 7100 Heilbronn | Verfahren zum herstellen einer solarzelle |
| DE4202455C1 (enExample) * | 1992-01-29 | 1993-08-19 | Siemens Ag, 8000 Muenchen, De | |
| IT1272665B (it) * | 1993-09-23 | 1997-06-26 | Eurosolare Spa | Procedimento per la preparazione di moduli fotovoltaici a base di silicio cristallino |
| JP3722326B2 (ja) * | 1996-12-20 | 2005-11-30 | 三菱電機株式会社 | 太陽電池の製造方法 |
| US6552414B1 (en) * | 1996-12-24 | 2003-04-22 | Imec Vzw | Semiconductor device with selectively diffused regions |
| AUPP437598A0 (en) * | 1998-06-29 | 1998-07-23 | Unisearch Limited | A self aligning method for forming a selective emitter and metallization in a solar cell |
| RU2139601C1 (ru) * | 1998-12-04 | 1999-10-10 | ООО Научно-производственная фирма "Кварк" | Способ изготовления солнечного элемента с n+-p-p+ структурой |
| RU2210142C1 (ru) * | 2002-04-17 | 2003-08-10 | Общество с ограниченной ответственностью Научно-производственный центр завода "Красное знамя" | Способ изготовления солнечного элемента с n+-p-p+ структурой |
| US7790574B2 (en) | 2004-12-20 | 2010-09-07 | Georgia Tech Research Corporation | Boron diffusion in silicon devices |
| ATE404991T1 (de) * | 2006-04-04 | 2008-08-15 | Solarworld Ind Deutschland Gmb | Verfahren zur dotierung mit hilfe von diffusion, oberflächenoxidation und rückätzung sowie verfahren zur herstellung von solarzellen |
| NL2003511C2 (en) * | 2009-09-18 | 2011-03-22 | Solar Cell Company Holding B V | Method for fabricating a photovoltaic cell and a photovoltaic cell obtained using such a method. |
| FR2959351B1 (fr) | 2010-04-26 | 2013-11-08 | Photowatt Int | Procede de preparation d’une structure de type n+pp+ ou de type p+nn+ sur plaques de silicium |
| CN101882651A (zh) * | 2010-07-16 | 2010-11-10 | 山东力诺太阳能电力股份有限公司 | 一种掩膜阻挡边缘扩散的太阳能电池制作工艺 |
| CN102487106A (zh) * | 2010-12-02 | 2012-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 晶体硅太阳能电池及其制造方法 |
| CN102263159A (zh) * | 2011-05-31 | 2011-11-30 | 江阴鑫辉太阳能有限公司 | 一种利用硼磷共扩散制备n型太阳电池的工艺 |
| CN104157740B (zh) * | 2014-09-03 | 2017-02-08 | 苏州阿特斯阳光电力科技有限公司 | 一种n型双面太阳能电池的制备方法 |
| CN104538485A (zh) * | 2014-11-06 | 2015-04-22 | 浙江正泰太阳能科技有限公司 | 一种双面电池的制备方法 |
| CN107425092A (zh) * | 2016-05-24 | 2017-12-01 | 上海凯世通半导体股份有限公司 | 双面电池的掺杂方法 |
| CN107425091A (zh) * | 2016-05-24 | 2017-12-01 | 上海凯世通半导体股份有限公司 | 双面电池的掺杂方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3958262A (en) * | 1971-03-09 | 1976-05-18 | Innotech Corporation | Electrostatic image reproducing element employing an insulating ion impermeable glass |
| JPS5363993A (en) * | 1976-11-19 | 1978-06-07 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
| US4104091A (en) * | 1977-05-20 | 1978-08-01 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Application of semiconductor diffusants to solar cells by screen printing |
| US4158591A (en) * | 1978-04-24 | 1979-06-19 | Atlantic Richfield Company | Solar cell manufacture |
| US4141811A (en) * | 1978-04-24 | 1979-02-27 | Atlantic Richfield Company | Plasma etching process for the manufacture of solar cells |
| US4199377A (en) * | 1979-02-28 | 1980-04-22 | The Boeing Company | Solar cell |
-
1980
- 1980-06-16 FR FR8013321A patent/FR2484709A1/fr active Granted
-
1981
- 1981-05-29 US US06/268,454 patent/US4377901A/en not_active Expired - Fee Related
- 1981-06-09 DE DE19813122771 patent/DE3122771A1/de not_active Ceased
- 1981-06-11 CA CA000379586A patent/CA1176739A/en not_active Expired
- 1981-06-12 GB GB8118082A patent/GB2077996B/en not_active Expired
- 1981-06-15 JP JP9100981A patent/JPS5727076A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB2077996B (en) | 1984-03-14 |
| US4377901A (en) | 1983-03-29 |
| GB2077996A (en) | 1981-12-23 |
| DE3122771A1 (de) | 1982-05-06 |
| JPS5727076A (en) | 1982-02-13 |
| FR2484709A1 (fr) | 1981-12-18 |
| FR2484709B1 (enExample) | 1982-07-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |