FR2483685A1 - Transistor de puissance a effet de champ (fet) du type v-mos a grille maillee - Google Patents
Transistor de puissance a effet de champ (fet) du type v-mos a grille maillee Download PDFInfo
- Publication number
- FR2483685A1 FR2483685A1 FR8110413A FR8110413A FR2483685A1 FR 2483685 A1 FR2483685 A1 FR 2483685A1 FR 8110413 A FR8110413 A FR 8110413A FR 8110413 A FR8110413 A FR 8110413A FR 2483685 A1 FR2483685 A1 FR 2483685A1
- Authority
- FR
- France
- Prior art keywords
- layer
- substrate
- doped
- silicon
- grooves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 101150068246 V-MOS gene Proteins 0.000 title claims abstract description 13
- 230000005669 field effect Effects 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 238000007667 floating Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 28
- 238000005530 etching Methods 0.000 description 15
- 239000000377 silicon dioxide Substances 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 239000008188 pellet Substances 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000013043 chemical agent Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- AJRJPORIQGYFMT-RMOCHZDMSA-N 2-Ethylidene-1,5-dimethyl-3,3-diphenylpyrrolidine Chemical compound C\C=C1\N(C)C(C)CC1(C=1C=CC=CC=1)C1=CC=CC=C1 AJRJPORIQGYFMT-RMOCHZDMSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- ONRPGGOGHKMHDT-UHFFFAOYSA-N benzene-1,2-diol;ethane-1,2-diamine Chemical compound NCCN.OC1=CC=CC=C1O ONRPGGOGHKMHDT-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 235000010603 pastilles Nutrition 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012086 standard solution Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/154,280 US4379305A (en) | 1980-05-29 | 1980-05-29 | Mesh gate V-MOS power FET |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2483685A1 true FR2483685A1 (fr) | 1981-12-04 |
| FR2483685B1 FR2483685B1 (cg-RX-API-DMAC7.html) | 1984-05-18 |
Family
ID=22550726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8110413A Granted FR2483685A1 (fr) | 1980-05-29 | 1981-05-26 | Transistor de puissance a effet de champ (fet) du type v-mos a grille maillee |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4379305A (cg-RX-API-DMAC7.html) |
| JP (1) | JPS5756975A (cg-RX-API-DMAC7.html) |
| CA (1) | CA1154543A (cg-RX-API-DMAC7.html) |
| DE (1) | DE3119137A1 (cg-RX-API-DMAC7.html) |
| FR (1) | FR2483685A1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB2077495B (cg-RX-API-DMAC7.html) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2089119A (en) * | 1980-12-10 | 1982-06-16 | Philips Electronic Associated | High voltage semiconductor devices |
| JPS58106870A (ja) * | 1981-12-18 | 1983-06-25 | Nissan Motor Co Ltd | パワ−ｍｏｓｆｅｔ |
| DE3380136D1 (en) * | 1982-04-12 | 1989-08-03 | Gen Electric | Semiconductor device having a diffused region of reduced length and method of fabricating the same |
| JP2739004B2 (ja) * | 1992-01-16 | 1998-04-08 | 三菱電機株式会社 | 半導体装置 |
| TW434648B (en) * | 1998-04-23 | 2001-05-16 | Int Rectifier Corp | P-channel trench mosfet structure |
| US7462910B1 (en) | 1998-10-14 | 2008-12-09 | International Rectifier Corporation | P-channel trench MOSFET structure |
| US7737533B2 (en) * | 2006-08-10 | 2010-06-15 | Vishay General Semiconductor Llc | Low voltage transient voltage suppressor with tapered recess extending into substrate of device allowing for reduced breakdown voltage |
| US8072027B2 (en) * | 2009-06-08 | 2011-12-06 | Fairchild Semiconductor Corporation | 3D channel architecture for semiconductor devices |
| FR3070222A1 (fr) * | 2017-08-16 | 2019-02-22 | Stmicroelectronics (Rousset) Sas | Puce comprenant deux transistors mos en parallele |
| FR3070221B1 (fr) | 2017-08-16 | 2020-05-15 | Stmicroelectronics (Rousset) Sas | Transistors mos en parallele |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4198693A (en) * | 1978-03-20 | 1980-04-15 | Texas Instruments Incorporated | VMOS Read only memory |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4145703A (en) * | 1977-04-15 | 1979-03-20 | Supertex, Inc. | High power MOS device and fabrication method therefor |
| JPS53142189A (en) * | 1977-05-17 | 1978-12-11 | Matsushita Electronics Corp | Insulating gate type field effect transistor |
| JPS5469085A (en) * | 1977-11-03 | 1979-06-02 | Ei Hoerunii Jiin | Large power semiconductor |
| US4148047A (en) * | 1978-01-16 | 1979-04-03 | Honeywell Inc. | Semiconductor apparatus |
| US4219835A (en) * | 1978-02-17 | 1980-08-26 | Siliconix, Inc. | VMOS Mesa structure and manufacturing process |
| NL184551C (nl) * | 1978-07-24 | 1989-08-16 | Philips Nv | Veldeffekttransistor met geisoleerde stuurelektrode. |
| US4268537A (en) * | 1979-12-03 | 1981-05-19 | Rca Corporation | Method for manufacturing a self-aligned contact in a grooved semiconductor surface |
-
1980
- 1980-05-29 US US06/154,280 patent/US4379305A/en not_active Expired - Lifetime
-
1981
- 1981-05-05 CA CA000376862A patent/CA1154543A/en not_active Expired
- 1981-05-14 DE DE19813119137 patent/DE3119137A1/de not_active Withdrawn
- 1981-05-26 FR FR8110413A patent/FR2483685A1/fr active Granted
- 1981-05-28 GB GB8116469A patent/GB2077495B/en not_active Expired
- 1981-05-29 JP JP56081249A patent/JPS5756975A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4198693A (en) * | 1978-03-20 | 1980-04-15 | Texas Instruments Incorporated | VMOS Read only memory |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2483685B1 (cg-RX-API-DMAC7.html) | 1984-05-18 |
| JPS5756975A (en) | 1982-04-05 |
| GB2077495B (en) | 1985-04-11 |
| CA1154543A (en) | 1983-09-27 |
| US4379305A (en) | 1983-04-05 |
| DE3119137A1 (de) | 1982-03-04 |
| GB2077495A (en) | 1981-12-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |