JPS5756975A - V-mos field effect semiconductor device and method of producing same - Google Patents

V-mos field effect semiconductor device and method of producing same

Info

Publication number
JPS5756975A
JPS5756975A JP56081249A JP8124981A JPS5756975A JP S5756975 A JPS5756975 A JP S5756975A JP 56081249 A JP56081249 A JP 56081249A JP 8124981 A JP8124981 A JP 8124981A JP S5756975 A JPS5756975 A JP S5756975A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
mos field
producing same
effect semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56081249A
Other languages
English (en)
Japanese (ja)
Inventor
Emu Mitsuchieru Muni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
General Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Instrument Corp filed Critical General Instrument Corp
Publication of JPS5756975A publication Critical patent/JPS5756975A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
JP56081249A 1980-05-29 1981-05-29 V-mos field effect semiconductor device and method of producing same Pending JPS5756975A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/154,280 US4379305A (en) 1980-05-29 1980-05-29 Mesh gate V-MOS power FET

Publications (1)

Publication Number Publication Date
JPS5756975A true JPS5756975A (en) 1982-04-05

Family

ID=22550726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56081249A Pending JPS5756975A (en) 1980-05-29 1981-05-29 V-mos field effect semiconductor device and method of producing same

Country Status (6)

Country Link
US (1) US4379305A (cg-RX-API-DMAC7.html)
JP (1) JPS5756975A (cg-RX-API-DMAC7.html)
CA (1) CA1154543A (cg-RX-API-DMAC7.html)
DE (1) DE3119137A1 (cg-RX-API-DMAC7.html)
FR (1) FR2483685A1 (cg-RX-API-DMAC7.html)
GB (1) GB2077495B (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58202575A (ja) * 1982-04-12 1983-11-25 ゼネラル・エレクトリツク・カンパニイ 長さの短い拡散領域を含む半導体素子の製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2089119A (en) * 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
JPS58106870A (ja) * 1981-12-18 1983-06-25 Nissan Motor Co Ltd パワ−ｍｏｓｆｅｔ
JP2739004B2 (ja) * 1992-01-16 1998-04-08 三菱電機株式会社 半導体装置
TW434648B (en) * 1998-04-23 2001-05-16 Int Rectifier Corp P-channel trench mosfet structure
US7462910B1 (en) 1998-10-14 2008-12-09 International Rectifier Corporation P-channel trench MOSFET structure
US7737533B2 (en) * 2006-08-10 2010-06-15 Vishay General Semiconductor Llc Low voltage transient voltage suppressor with tapered recess extending into substrate of device allowing for reduced breakdown voltage
US8072027B2 (en) * 2009-06-08 2011-12-06 Fairchild Semiconductor Corporation 3D channel architecture for semiconductor devices
FR3070222A1 (fr) * 2017-08-16 2019-02-22 Stmicroelectronics (Rousset) Sas Puce comprenant deux transistors mos en parallele
FR3070221B1 (fr) 2017-08-16 2020-05-15 Stmicroelectronics (Rousset) Sas Transistors mos en parallele

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53142189A (en) * 1977-05-17 1978-12-11 Matsushita Electronics Corp Insulating gate type field effect transistor
JPS5469085A (en) * 1977-11-03 1979-06-02 Ei Hoerunii Jiin Large power semiconductor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4145703A (en) * 1977-04-15 1979-03-20 Supertex, Inc. High power MOS device and fabrication method therefor
US4148047A (en) * 1978-01-16 1979-04-03 Honeywell Inc. Semiconductor apparatus
US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process
US4198693A (en) * 1978-03-20 1980-04-15 Texas Instruments Incorporated VMOS Read only memory
NL184551C (nl) * 1978-07-24 1989-08-16 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode.
US4268537A (en) * 1979-12-03 1981-05-19 Rca Corporation Method for manufacturing a self-aligned contact in a grooved semiconductor surface

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53142189A (en) * 1977-05-17 1978-12-11 Matsushita Electronics Corp Insulating gate type field effect transistor
JPS5469085A (en) * 1977-11-03 1979-06-02 Ei Hoerunii Jiin Large power semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58202575A (ja) * 1982-04-12 1983-11-25 ゼネラル・エレクトリツク・カンパニイ 長さの短い拡散領域を含む半導体素子の製造方法

Also Published As

Publication number Publication date
FR2483685B1 (cg-RX-API-DMAC7.html) 1984-05-18
GB2077495B (en) 1985-04-11
CA1154543A (en) 1983-09-27
FR2483685A1 (fr) 1981-12-04
US4379305A (en) 1983-04-05
DE3119137A1 (de) 1982-03-04
GB2077495A (en) 1981-12-16

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