US7737533B2 - Low voltage transient voltage suppressor with tapered recess extending into substrate of device allowing for reduced breakdown voltage - Google Patents
Low voltage transient voltage suppressor with tapered recess extending into substrate of device allowing for reduced breakdown voltage Download PDFInfo
- Publication number
- US7737533B2 US7737533B2 US11/827,463 US82746307A US7737533B2 US 7737533 B2 US7737533 B2 US 7737533B2 US 82746307 A US82746307 A US 82746307A US 7737533 B2 US7737533 B2 US 7737533B2
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- United States
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- 239000000758 substrate Substances 0.000 title claims abstract description 55
- 230000015556 catabolic process Effects 0.000 title claims description 11
- 230000001052 transient effect Effects 0.000 title description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- 229920005591 polysilicon Polymers 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000002441 reversible effect Effects 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Emergency Protection Circuit Devices (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (9)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/827,463 US7737533B2 (en) | 2006-08-10 | 2007-07-11 | Low voltage transient voltage suppressor with tapered recess extending into substrate of device allowing for reduced breakdown voltage |
JP2009523858A JP5682052B2 (en) | 2006-08-10 | 2007-08-10 | Low voltage transient voltage suppressor with low breakdown voltage |
CN2007800297800A CN101501856B (en) | 2006-08-10 | 2007-08-10 | Low voltage transient voltage suppressor with reduced breakdown voltage |
PCT/US2007/017770 WO2008021221A2 (en) | 2006-08-10 | 2007-08-10 | Low voltage transient voltage suppressor with reduced breakdown voltage |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US83687506P | 2006-08-10 | 2006-08-10 | |
US11/827,463 US7737533B2 (en) | 2006-08-10 | 2007-07-11 | Low voltage transient voltage suppressor with tapered recess extending into substrate of device allowing for reduced breakdown voltage |
Publications (2)
Publication Number | Publication Date |
---|---|
US20080036047A1 US20080036047A1 (en) | 2008-02-14 |
US7737533B2 true US7737533B2 (en) | 2010-06-15 |
Family
ID=39049887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/827,463 Active US7737533B2 (en) | 2006-08-10 | 2007-07-11 | Low voltage transient voltage suppressor with tapered recess extending into substrate of device allowing for reduced breakdown voltage |
Country Status (4)
Country | Link |
---|---|
US (1) | US7737533B2 (en) |
JP (1) | JP5682052B2 (en) |
CN (1) | CN101501856B (en) |
WO (1) | WO2008021221A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090114541A1 (en) * | 2007-10-31 | 2009-05-07 | Postech Academy-Industry Foundation | Method for Manufacturing Micro Wire, and Sensor Including the Micro Wire and Method for manufacturing the Sensor |
US9379257B2 (en) | 2012-06-22 | 2016-06-28 | Infineon Technologies Ag | Electrical device and method for manufacturing same |
US10305372B2 (en) | 2015-12-09 | 2019-05-28 | Fuji Electric Co., Ltd. | Power conversion device with snubber circuit to suppress surge voltage |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011023922A1 (en) * | 2009-08-28 | 2011-03-03 | X-Fab Semiconductor Foundries Ag | Improved pn junctions and methods |
GB0915501D0 (en) * | 2009-09-04 | 2009-10-07 | Univ Warwick | Organic photosensitive optoelectronic devices |
CN102867746B (en) * | 2011-07-05 | 2015-02-18 | 北大方正集团有限公司 | Method for processing diode and diode |
CN113990925B (en) * | 2021-10-26 | 2023-11-24 | 电子科技大学 | Transient suppression diode structure for improving withstand voltage design precision |
CN116053327A (en) * | 2023-01-17 | 2023-05-02 | 遵义筑芯威半导体技术有限公司 | Protective chip with low breakdown voltage and low leakage current and manufacturing method |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4003036A (en) | 1975-10-23 | 1977-01-11 | American Micro-Systems, Inc. | Single IGFET memory cell with buried storage element |
US4296429A (en) | 1978-08-09 | 1981-10-20 | Harris Corporation | VMOS Transistor and method of fabrication |
US4375124A (en) * | 1981-11-12 | 1983-03-01 | Gte Laboratories Incorporated | Power static induction transistor fabrication |
US4379305A (en) * | 1980-05-29 | 1983-04-05 | General Instrument Corp. | Mesh gate V-MOS power FET |
US4966433A (en) * | 1988-03-03 | 1990-10-30 | At&T Bell Laboratories | Device including a component in alignment with a substrate-supported waveguide |
US5501998A (en) * | 1994-04-26 | 1996-03-26 | Industrial Technology Research Institution | Method for fabricating dynamic random access memory cells having vertical sidewall stacked storage capacitors |
US6365932B1 (en) * | 1999-08-20 | 2002-04-02 | Denso Corporation | Power MOS transistor |
US7102199B2 (en) | 2001-05-04 | 2006-09-05 | Semiconductor Components Industries L.L.C. | Low voltage transient voltage suppressor and method of making |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4102714A (en) * | 1976-04-23 | 1978-07-25 | International Business Machines Corporation | Process for fabricating a low breakdown voltage device for polysilicon gate technology |
JP2002009082A (en) * | 2000-06-21 | 2002-01-11 | Fuji Electric Co Ltd | Semiconductor device and its fabricating method |
US6600204B2 (en) * | 2001-07-11 | 2003-07-29 | General Semiconductor, Inc. | Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same |
-
2007
- 2007-07-11 US US11/827,463 patent/US7737533B2/en active Active
- 2007-08-10 WO PCT/US2007/017770 patent/WO2008021221A2/en active Application Filing
- 2007-08-10 CN CN2007800297800A patent/CN101501856B/en not_active Expired - Fee Related
- 2007-08-10 JP JP2009523858A patent/JP5682052B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4003036A (en) | 1975-10-23 | 1977-01-11 | American Micro-Systems, Inc. | Single IGFET memory cell with buried storage element |
US4296429A (en) | 1978-08-09 | 1981-10-20 | Harris Corporation | VMOS Transistor and method of fabrication |
US4379305A (en) * | 1980-05-29 | 1983-04-05 | General Instrument Corp. | Mesh gate V-MOS power FET |
US4375124A (en) * | 1981-11-12 | 1983-03-01 | Gte Laboratories Incorporated | Power static induction transistor fabrication |
US4966433A (en) * | 1988-03-03 | 1990-10-30 | At&T Bell Laboratories | Device including a component in alignment with a substrate-supported waveguide |
US5501998A (en) * | 1994-04-26 | 1996-03-26 | Industrial Technology Research Institution | Method for fabricating dynamic random access memory cells having vertical sidewall stacked storage capacitors |
US6365932B1 (en) * | 1999-08-20 | 2002-04-02 | Denso Corporation | Power MOS transistor |
US7102199B2 (en) | 2001-05-04 | 2006-09-05 | Semiconductor Components Industries L.L.C. | Low voltage transient voltage suppressor and method of making |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090114541A1 (en) * | 2007-10-31 | 2009-05-07 | Postech Academy-Industry Foundation | Method for Manufacturing Micro Wire, and Sensor Including the Micro Wire and Method for manufacturing the Sensor |
US8647490B2 (en) * | 2007-10-31 | 2014-02-11 | Postech Academy-Industry Foundation | Method for manufacturing carbon nanotube containing conductive micro wire and sensor including the micro wire |
US9379257B2 (en) | 2012-06-22 | 2016-06-28 | Infineon Technologies Ag | Electrical device and method for manufacturing same |
US9741816B2 (en) | 2012-06-22 | 2017-08-22 | Infineon Technologies Ag | Electrical device and method for manufacturing same |
US10305372B2 (en) | 2015-12-09 | 2019-05-28 | Fuji Electric Co., Ltd. | Power conversion device with snubber circuit to suppress surge voltage |
Also Published As
Publication number | Publication date |
---|---|
JP5682052B2 (en) | 2015-03-11 |
CN101501856B (en) | 2012-04-18 |
WO2008021221A3 (en) | 2008-11-27 |
JP2010500755A (en) | 2010-01-07 |
WO2008021221A2 (en) | 2008-02-21 |
US20080036047A1 (en) | 2008-02-14 |
CN101501856A (en) | 2009-08-05 |
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