FR2463825A1 - Procede de fabrication d'un dispositif a semi-conducteur dans une couche epitaxiale simulee - Google Patents

Procede de fabrication d'un dispositif a semi-conducteur dans une couche epitaxiale simulee Download PDF

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Publication number
FR2463825A1
FR2463825A1 FR8013899A FR8013899A FR2463825A1 FR 2463825 A1 FR2463825 A1 FR 2463825A1 FR 8013899 A FR8013899 A FR 8013899A FR 8013899 A FR8013899 A FR 8013899A FR 2463825 A1 FR2463825 A1 FR 2463825A1
Authority
FR
France
Prior art keywords
epitaxial layer
simulated
semiconductor body
implanted
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8013899A
Other languages
English (en)
French (fr)
Other versions
FR2463825B1 (show.php
Inventor
Jagir S Multani
Jagtar Sandhu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
Arris Technology Inc
General Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arris Technology Inc, General Instrument Corp filed Critical Arris Technology Inc
Publication of FR2463825A1 publication Critical patent/FR2463825A1/fr
Application granted granted Critical
Publication of FR2463825B1 publication Critical patent/FR2463825B1/fr
Granted legal-status Critical Current

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Classifications

    • H10P32/1406—
    • H10P30/204—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10P30/212—
    • H10P32/171—
FR8013899A 1979-08-20 1980-06-23 Procede de fabrication d'un dispositif a semi-conducteur dans une couche epitaxiale simulee Granted FR2463825A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6768679A 1979-08-20 1979-08-20

Publications (2)

Publication Number Publication Date
FR2463825A1 true FR2463825A1 (fr) 1981-02-27
FR2463825B1 FR2463825B1 (show.php) 1982-12-10

Family

ID=22077689

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8013899A Granted FR2463825A1 (fr) 1979-08-20 1980-06-23 Procede de fabrication d'un dispositif a semi-conducteur dans une couche epitaxiale simulee

Country Status (6)

Country Link
JP (1) JPS5630766A (show.php)
CA (1) CA1131797A (show.php)
DE (1) DE3027197A1 (show.php)
FR (1) FR2463825A1 (show.php)
GB (1) GB2056765A (show.php)
IT (1) IT1147064B (show.php)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2156383A (en) * 1984-02-06 1985-10-09 Plessey Co Plc Infra-red material structures
JPH02109158U (show.php) * 1989-02-10 1990-08-30
JPH0338044A (ja) * 1989-07-05 1991-02-19 Toshiba Corp 半導体装置の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1489135A1 (show.php) * 1963-01-18 1970-06-04
US3810791A (en) * 1970-08-03 1974-05-14 Texas Instruments Inc Process for the fabrication of semiconductor materials
US3876472A (en) * 1974-04-15 1975-04-08 Rca Corp Method of achieving semiconductor substrates having similar surface resistivity
GB1457223A (en) * 1974-07-15 1976-12-01 Ibm Ion implantation in semiconductors
US4145700A (en) * 1976-12-13 1979-03-20 International Business Machines Corporation Power field effect transistors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6051275B2 (ja) * 1975-10-30 1985-11-13 ソニー株式会社 半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1489135A1 (show.php) * 1963-01-18 1970-06-04
US3810791A (en) * 1970-08-03 1974-05-14 Texas Instruments Inc Process for the fabrication of semiconductor materials
US3876472A (en) * 1974-04-15 1975-04-08 Rca Corp Method of achieving semiconductor substrates having similar surface resistivity
GB1457223A (en) * 1974-07-15 1976-12-01 Ibm Ion implantation in semiconductors
US4145700A (en) * 1976-12-13 1979-03-20 International Business Machines Corporation Power field effect transistors

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/68 *
EXBK/79 *

Also Published As

Publication number Publication date
DE3027197A1 (de) 1981-03-19
FR2463825B1 (show.php) 1982-12-10
JPS5630766A (en) 1981-03-27
GB2056765A (en) 1981-03-18
IT1147064B (it) 1986-11-19
CA1131797A (en) 1982-09-14
IT8049502A0 (it) 1980-08-14

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