FR2463825B1 - - Google Patents
Info
- Publication number
- FR2463825B1 FR2463825B1 FR8013899A FR8013899A FR2463825B1 FR 2463825 B1 FR2463825 B1 FR 2463825B1 FR 8013899 A FR8013899 A FR 8013899A FR 8013899 A FR8013899 A FR 8013899A FR 2463825 B1 FR2463825 B1 FR 2463825B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
- H10P32/1406—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase by ion implantation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
- H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
- H10P30/212—Through-implantation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6768679A | 1979-08-20 | 1979-08-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2463825A1 FR2463825A1 (fr) | 1981-02-27 |
| FR2463825B1 true FR2463825B1 (show.php) | 1982-12-10 |
Family
ID=22077689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8013899A Granted FR2463825A1 (fr) | 1979-08-20 | 1980-06-23 | Procede de fabrication d'un dispositif a semi-conducteur dans une couche epitaxiale simulee |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5630766A (show.php) |
| CA (1) | CA1131797A (show.php) |
| DE (1) | DE3027197A1 (show.php) |
| FR (1) | FR2463825A1 (show.php) |
| GB (1) | GB2056765A (show.php) |
| IT (1) | IT1147064B (show.php) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2156383A (en) * | 1984-02-06 | 1985-10-09 | Plessey Co Plc | Infra-red material structures |
| JPH02109158U (show.php) * | 1989-02-10 | 1990-08-30 | ||
| JPH0338044A (ja) * | 1989-07-05 | 1991-02-19 | Toshiba Corp | 半導体装置の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL302630A (show.php) * | 1963-01-18 | 1900-01-01 | ||
| US3810791A (en) * | 1970-08-03 | 1974-05-14 | Texas Instruments Inc | Process for the fabrication of semiconductor materials |
| US3876472A (en) * | 1974-04-15 | 1975-04-08 | Rca Corp | Method of achieving semiconductor substrates having similar surface resistivity |
| US3945856A (en) * | 1974-07-15 | 1976-03-23 | Ibm Corporation | Method of ion implantation through an electrically insulative material |
| JPS6051275B2 (ja) * | 1975-10-30 | 1985-11-13 | ソニー株式会社 | 半導体装置の製造方法 |
| US4055884A (en) * | 1976-12-13 | 1977-11-01 | International Business Machines Corporation | Fabrication of power field effect transistors and the resulting structures |
-
1980
- 1980-03-24 CA CA348,272A patent/CA1131797A/en not_active Expired
- 1980-04-22 GB GB8013170A patent/GB2056765A/en not_active Withdrawn
- 1980-06-23 FR FR8013899A patent/FR2463825A1/fr active Granted
- 1980-07-18 DE DE19803027197 patent/DE3027197A1/de not_active Withdrawn
- 1980-07-23 JP JP10001280A patent/JPS5630766A/ja active Pending
- 1980-08-14 IT IT49502/80A patent/IT1147064B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| DE3027197A1 (de) | 1981-03-19 |
| JPS5630766A (en) | 1981-03-27 |
| GB2056765A (en) | 1981-03-18 |
| CA1131797A (en) | 1982-09-14 |
| IT1147064B (it) | 1986-11-19 |
| FR2463825A1 (fr) | 1981-02-27 |
| IT8049502A0 (it) | 1980-08-14 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |