FR2458907A1 - Transistor a effet de champ a tension de seuil ajustable - Google Patents

Transistor a effet de champ a tension de seuil ajustable Download PDF

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Publication number
FR2458907A1
FR2458907A1 FR7914991A FR7914991A FR2458907A1 FR 2458907 A1 FR2458907 A1 FR 2458907A1 FR 7914991 A FR7914991 A FR 7914991A FR 7914991 A FR7914991 A FR 7914991A FR 2458907 A1 FR2458907 A1 FR 2458907A1
Authority
FR
France
Prior art keywords
effect transistor
field effect
intermediate layer
layer
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7914991A
Other languages
English (en)
French (fr)
Other versions
FR2458907B1 (enrdf_load_html_response
Inventor
Bernard Descamps
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7914991A priority Critical patent/FR2458907A1/fr
Publication of FR2458907A1 publication Critical patent/FR2458907A1/fr
Application granted granted Critical
Publication of FR2458907B1 publication Critical patent/FR2458907B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
FR7914991A 1979-06-12 1979-06-12 Transistor a effet de champ a tension de seuil ajustable Granted FR2458907A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7914991A FR2458907A1 (fr) 1979-06-12 1979-06-12 Transistor a effet de champ a tension de seuil ajustable

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7914991A FR2458907A1 (fr) 1979-06-12 1979-06-12 Transistor a effet de champ a tension de seuil ajustable

Publications (2)

Publication Number Publication Date
FR2458907A1 true FR2458907A1 (fr) 1981-01-02
FR2458907B1 FR2458907B1 (enrdf_load_html_response) 1982-11-26

Family

ID=9226477

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7914991A Granted FR2458907A1 (fr) 1979-06-12 1979-06-12 Transistor a effet de champ a tension de seuil ajustable

Country Status (1)

Country Link
FR (1) FR2458907A1 (enrdf_load_html_response)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2487583A1 (fr) * 1980-07-25 1982-01-29 Thomson Csf Procede de fabrication d'un transistor a effet de champ a rainure
FR2511194A1 (fr) * 1981-08-04 1983-02-11 Siliconix Inc Transistor a effet de champ et procede de fabrication
FR2518816A1 (fr) * 1981-12-18 1983-06-24 Nissan Motor Transistor a effet de champ metal-oxyde-semi-conducteur de puissance
EP0114435A1 (en) * 1982-12-21 1984-08-01 Koninklijke Philips Electronics N.V. Lateral DMOS transistor devices suitable for sourcefollower applications
EP0115098A1 (en) * 1982-12-27 1984-08-08 Koninklijke Philips Electronics N.V. Lateral DMOS transistor device having an injector region
EP0081269A3 (en) * 1981-12-07 1984-12-27 Philips Electronic And Associated Industries Limited Insulated-gate field-effect transistors
EP0066081A3 (en) * 1981-05-22 1985-09-11 International Business Machines Corporation Dense vertical fet and method of making
EP0407011A3 (en) * 1989-07-03 1991-03-13 Harris Corporation Insulated gate semiconductor devices
CN105336785A (zh) * 2014-08-15 2016-02-17 北大方正集团有限公司 一种耗尽型vdmos器件及其制作方法
CN105448733A (zh) * 2014-09-02 2016-03-30 北大方正集团有限公司 一种耗尽型vdmos器件及其制造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105990399A (zh) * 2015-01-27 2016-10-05 北大方正集团有限公司 一种耗尽型mos管的制造方法及器件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2136509A1 (de) * 1970-07-24 1972-11-23 Hitachi Ltd., Tokio Halbleitervorrichtung
GB1328874A (en) * 1969-09-30 1973-09-05 Sprague Electric Co Semiconductor devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1328874A (en) * 1969-09-30 1973-09-05 Sprague Electric Co Semiconductor devices
DE2136509A1 (de) * 1970-07-24 1972-11-23 Hitachi Ltd., Tokio Halbleitervorrichtung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/78 *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2487583A1 (fr) * 1980-07-25 1982-01-29 Thomson Csf Procede de fabrication d'un transistor a effet de champ a rainure
EP0066081A3 (en) * 1981-05-22 1985-09-11 International Business Machines Corporation Dense vertical fet and method of making
FR2511194A1 (fr) * 1981-08-04 1983-02-11 Siliconix Inc Transistor a effet de champ et procede de fabrication
EP0081269A3 (en) * 1981-12-07 1984-12-27 Philips Electronic And Associated Industries Limited Insulated-gate field-effect transistors
FR2518816A1 (fr) * 1981-12-18 1983-06-24 Nissan Motor Transistor a effet de champ metal-oxyde-semi-conducteur de puissance
US4697201A (en) * 1981-12-18 1987-09-29 Nissan Motor Company, Limited Power MOS FET with decreased resistance in the conducting state
EP0114435A1 (en) * 1982-12-21 1984-08-01 Koninklijke Philips Electronics N.V. Lateral DMOS transistor devices suitable for sourcefollower applications
EP0115098A1 (en) * 1982-12-27 1984-08-08 Koninklijke Philips Electronics N.V. Lateral DMOS transistor device having an injector region
EP0407011A3 (en) * 1989-07-03 1991-03-13 Harris Corporation Insulated gate semiconductor devices
CN105336785A (zh) * 2014-08-15 2016-02-17 北大方正集团有限公司 一种耗尽型vdmos器件及其制作方法
CN105336785B (zh) * 2014-08-15 2019-03-29 北大方正集团有限公司 一种耗尽型vdmos器件及其制作方法
CN105448733A (zh) * 2014-09-02 2016-03-30 北大方正集团有限公司 一种耗尽型vdmos器件及其制造方法

Also Published As

Publication number Publication date
FR2458907B1 (enrdf_load_html_response) 1982-11-26

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