FR2451636A1 - Procede de production d'un materiau composite semi-conducteur-verre - Google Patents

Procede de production d'un materiau composite semi-conducteur-verre

Info

Publication number
FR2451636A1
FR2451636A1 FR8005827A FR8005827A FR2451636A1 FR 2451636 A1 FR2451636 A1 FR 2451636A1 FR 8005827 A FR8005827 A FR 8005827A FR 8005827 A FR8005827 A FR 8005827A FR 2451636 A1 FR2451636 A1 FR 2451636A1
Authority
FR
France
Prior art keywords
semiconductor
composite material
producing
layer
glass composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8005827A
Other languages
English (en)
Other versions
FR2451636B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of FR2451636A1 publication Critical patent/FR2451636A1/fr
Application granted granted Critical
Publication of FR2451636B1 publication Critical patent/FR2451636B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233Manufacture of photoelectric screens or charge-storage screens
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/977Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Joining Of Glass To Other Materials (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

PROCEDE DE PRODUCTION D'UN MATERIAU COMPOSITE SEMI-CONDUCTEUR-VERRE COMPORTANT AU MOINS UNE COUCHE SEMI-CONDUCTRICE RELIEE DE FACON PERMANENTE A UN SUBSTRAT DE VERRE PLAN. LA SURFACE DU SUBSTRAT DE VERRE 1 EN REGARD DU SEMI-CONDUCTEUR 5 EST RECOUVERTE AU MOINS PARTIELLEMENT PAR UNE COUCHE 3. LES ZONES SUPERFICIELLES DU SEMI-CONDUCTEUR 5 ET DU SUBSTRAT 1 NON RECOUVERTES SONT REUNIES PAR PRESSION ET CHALEUR. LA COUCHE SEMI-CONDUCTRICE 5 EST ENSUITE REDUITE PAR GRAVURE-POLISSAGE A L'EPAISSEUR DE LA COUCHE 3. LE MATERIAU COMPOSITE SELON L'INVENTION EST UTILISABLE EN PARTICULIER COMME PHOTOCATHODE DANS DES TUBES CONVERTISSEURS OU AMPLIFICATEURS D'IMAGE.
FR8005827A 1979-03-14 1980-03-14 Procede de production d'un materiau composite semi-conducteur-verre Granted FR2451636A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2909985A DE2909985C3 (de) 1979-03-14 1979-03-14 Verfahren zur Herstellung eines Halbleiter-Glas-Verbundwerkstoffs und Verwendung eines solchen Verbundwerkstoffes

Publications (2)

Publication Number Publication Date
FR2451636A1 true FR2451636A1 (fr) 1980-10-10
FR2451636B1 FR2451636B1 (fr) 1985-03-08

Family

ID=6065356

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8005827A Granted FR2451636A1 (fr) 1979-03-14 1980-03-14 Procede de production d'un materiau composite semi-conducteur-verre

Country Status (5)

Country Link
US (1) US4295923A (fr)
DE (1) DE2909985C3 (fr)
FR (1) FR2451636A1 (fr)
GB (1) GB2046178B (fr)
NL (1) NL8001297A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401367A (en) * 1980-11-03 1983-08-30 United Technologies Corporation Method for pattern masking objects and the products thereof
DE3242737A1 (de) * 1982-11-19 1984-05-24 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen einer halbleiter-photokathode
US4539687A (en) * 1982-12-27 1985-09-03 At&T Bell Laboratories Semiconductor laser CRT
JPS59180525A (ja) * 1983-03-31 1984-10-13 Citizen Watch Co Ltd カラ−液晶表示パネル
DE3321535A1 (de) * 1983-04-22 1984-10-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen einer halbleiterphotokathode
DE3524765A1 (de) * 1985-07-11 1987-01-22 Licentia Gmbh Verfahren zum herstellen einer durchsichtphotokathode
US4992135A (en) * 1990-07-24 1991-02-12 Micron Technology, Inc. Method of etching back of tungsten layers on semiconductor wafers, and solution therefore
US5127984A (en) * 1991-05-02 1992-07-07 Avantek, Inc. Rapid wafer thinning process
US6206756B1 (en) 1998-11-10 2001-03-27 Micron Technology, Inc. Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6276996B1 (en) 1998-11-10 2001-08-21 Micron Technology, Inc. Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
RU2670498C1 (ru) * 2017-10-16 2018-10-23 Общество с ограниченной ответственностью "Катод" Устройство для изготовления заготовки фотокатода фотоэлектронного прибора термокомпрессионным соединением полупроводниковой пластины со стеклянной заготовкой

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1145488A (en) * 1965-04-30 1969-03-12 Texas Instruments Inc Semiconductor device fabrication
FR2291610A1 (fr) * 1974-11-18 1976-06-11 Varian Associates Procede de fabrication d'un composant dit iii-v et produit obtenu
DE2842492A1 (de) * 1978-09-29 1980-04-03 Licentia Gmbh Halbleiter-glas-verbundwerkstoff und verfahren zu seiner herstellung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1138401A (en) * 1965-05-06 1969-01-01 Mallory & Co Inc P R Bonding
US3951707A (en) * 1973-04-02 1976-04-20 Kulite Semiconductor Products, Inc. Method for fabricating glass-backed transducers and glass-backed structures
US4069094A (en) * 1976-12-30 1978-01-17 Rca Corporation Method of manufacturing apertured aluminum oxide substrates

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1145488A (en) * 1965-04-30 1969-03-12 Texas Instruments Inc Semiconductor device fabrication
FR2291610A1 (fr) * 1974-11-18 1976-06-11 Varian Associates Procede de fabrication d'un composant dit iii-v et produit obtenu
DE2842492A1 (de) * 1978-09-29 1980-04-03 Licentia Gmbh Halbleiter-glas-verbundwerkstoff und verfahren zu seiner herstellung

Also Published As

Publication number Publication date
US4295923A (en) 1981-10-20
GB2046178A (en) 1980-11-12
DE2909985B2 (de) 1981-01-22
FR2451636B1 (fr) 1985-03-08
DE2909985A1 (de) 1980-09-18
DE2909985C3 (de) 1981-10-22
GB2046178B (en) 1983-01-26
NL8001297A (nl) 1980-09-16

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Legal Events

Date Code Title Description
ST Notification of lapse