FR2451636A1 - Procede de production d'un materiau composite semi-conducteur-verre - Google Patents

Procede de production d'un materiau composite semi-conducteur-verre

Info

Publication number
FR2451636A1
FR2451636A1 FR8005827A FR8005827A FR2451636A1 FR 2451636 A1 FR2451636 A1 FR 2451636A1 FR 8005827 A FR8005827 A FR 8005827A FR 8005827 A FR8005827 A FR 8005827A FR 2451636 A1 FR2451636 A1 FR 2451636A1
Authority
FR
France
Prior art keywords
semiconductor
composite material
producing
layer
glass composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8005827A
Other languages
English (en)
French (fr)
Other versions
FR2451636B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of FR2451636A1 publication Critical patent/FR2451636A1/fr
Application granted granted Critical
Publication of FR2451636B1 publication Critical patent/FR2451636B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Joining Of Glass To Other Materials (AREA)
  • Surface Treatment Of Glass (AREA)
FR8005827A 1979-03-14 1980-03-14 Procede de production d'un materiau composite semi-conducteur-verre Granted FR2451636A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2909985A DE2909985C3 (de) 1979-03-14 1979-03-14 Verfahren zur Herstellung eines Halbleiter-Glas-Verbundwerkstoffs und Verwendung eines solchen Verbundwerkstoffes

Publications (2)

Publication Number Publication Date
FR2451636A1 true FR2451636A1 (fr) 1980-10-10
FR2451636B1 FR2451636B1 (enExample) 1985-03-08

Family

ID=6065356

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8005827A Granted FR2451636A1 (fr) 1979-03-14 1980-03-14 Procede de production d'un materiau composite semi-conducteur-verre

Country Status (5)

Country Link
US (1) US4295923A (enExample)
DE (1) DE2909985C3 (enExample)
FR (1) FR2451636A1 (enExample)
GB (1) GB2046178B (enExample)
NL (1) NL8001297A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401367A (en) * 1980-11-03 1983-08-30 United Technologies Corporation Method for pattern masking objects and the products thereof
DE3242737A1 (de) * 1982-11-19 1984-05-24 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen einer halbleiter-photokathode
US4539687A (en) * 1982-12-27 1985-09-03 At&T Bell Laboratories Semiconductor laser CRT
JPS59180525A (ja) * 1983-03-31 1984-10-13 Citizen Watch Co Ltd カラ−液晶表示パネル
DE3321535A1 (de) * 1983-04-22 1984-10-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen einer halbleiterphotokathode
DE3524765A1 (de) * 1985-07-11 1987-01-22 Licentia Gmbh Verfahren zum herstellen einer durchsichtphotokathode
US4992135A (en) * 1990-07-24 1991-02-12 Micron Technology, Inc. Method of etching back of tungsten layers on semiconductor wafers, and solution therefore
US5127984A (en) * 1991-05-02 1992-07-07 Avantek, Inc. Rapid wafer thinning process
US6276996B1 (en) 1998-11-10 2001-08-21 Micron Technology, Inc. Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6206756B1 (en) 1998-11-10 2001-03-27 Micron Technology, Inc. Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
RU2670498C1 (ru) * 2017-10-16 2018-10-23 Общество с ограниченной ответственностью "Катод" Устройство для изготовления заготовки фотокатода фотоэлектронного прибора термокомпрессионным соединением полупроводниковой пластины со стеклянной заготовкой

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1145488A (en) * 1965-04-30 1969-03-12 Texas Instruments Inc Semiconductor device fabrication
FR2291610A1 (fr) * 1974-11-18 1976-06-11 Varian Associates Procede de fabrication d'un composant dit iii-v et produit obtenu
DE2842492A1 (de) * 1978-09-29 1980-04-03 Licentia Gmbh Halbleiter-glas-verbundwerkstoff und verfahren zu seiner herstellung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1138401A (en) * 1965-05-06 1969-01-01 Mallory & Co Inc P R Bonding
US3951707A (en) * 1973-04-02 1976-04-20 Kulite Semiconductor Products, Inc. Method for fabricating glass-backed transducers and glass-backed structures
US4069094A (en) * 1976-12-30 1978-01-17 Rca Corporation Method of manufacturing apertured aluminum oxide substrates

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1145488A (en) * 1965-04-30 1969-03-12 Texas Instruments Inc Semiconductor device fabrication
FR2291610A1 (fr) * 1974-11-18 1976-06-11 Varian Associates Procede de fabrication d'un composant dit iii-v et produit obtenu
DE2842492A1 (de) * 1978-09-29 1980-04-03 Licentia Gmbh Halbleiter-glas-verbundwerkstoff und verfahren zu seiner herstellung

Also Published As

Publication number Publication date
NL8001297A (nl) 1980-09-16
GB2046178A (en) 1980-11-12
DE2909985B2 (de) 1981-01-22
FR2451636B1 (enExample) 1985-03-08
DE2909985C3 (de) 1981-10-22
GB2046178B (en) 1983-01-26
DE2909985A1 (de) 1980-09-18
US4295923A (en) 1981-10-20

Similar Documents

Publication Publication Date Title
FR2451636A1 (fr) Procede de production d'un materiau composite semi-conducteur-verre
EP0866493A3 (en) Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate
JPS5762539A (en) Mounting method for semiconductor element
FR2454182A1 (fr) Procede pour fabriquer des corps semi-conducteurs constitues par du silicium amorphe, au moyen d'une decharge par effluves
JPS5678155A (en) Semiconductor device and manufacture thereof
GB1498925A (en) Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate apparatus for use in carrying out said method and semiconductor devices thus manufactured
JPS54112977A (en) Plastic-lined metal tube and its manufacture
FR2451635A1 (fr) Materiau composite semi-conducteur-verre
JPS55104931A (en) Forming method for cover glass for display tube
JPS6481116A (en) Superconductor
JPS5683073A (en) Semiconductor device
JPS5522863A (en) Manufacturing method for semiconductor device
JPS54114256A (en) Construction of liquid crystal cell and production of the same
KR860009499A (ko) 규소웨이퍼 보강재 및 보강방법
JPS5710224A (en) Forming method for silicone single crystalline film
WO1987004854A3 (en) Liquid epitaxial process for producing three-dimensional semiconductor structures
SU1097908A1 (ru) Устройство дл изготовлени образца дл рентгеноспектрального анализа
JPS53146299A (en) Production of silicon carbide substrate
JPS56100512A (en) Elastic surface wave element and its production
KR910013486A (ko) 결함-없는 단결정 박막층 제조방법
FR2423865A1 (fr) Procede pour l'application d'une couche epitaxiale sur un substrat a partir d'une phase gazeuse
JPS57191617A (en) Liquid crystal cell and its production
FR2383728A1 (fr) Perfectionnement a un procede de realisation d'un lingot de materiau cristallin
JPS5740923A (en) Manufacture of semiconductor device
JPS54113253A (en) Bonding method of semiconductor pellet

Legal Events

Date Code Title Description
ST Notification of lapse