FR2437676A1 - Agencement de memoires mortes a porte flottante electriquement programmables - Google Patents
Agencement de memoires mortes a porte flottante electriquement programmablesInfo
- Publication number
- FR2437676A1 FR2437676A1 FR7924057A FR7924057A FR2437676A1 FR 2437676 A1 FR2437676 A1 FR 2437676A1 FR 7924057 A FR7924057 A FR 7924057A FR 7924057 A FR7924057 A FR 7924057A FR 2437676 A1 FR2437676 A1 FR 2437676A1
- Authority
- FR
- France
- Prior art keywords
- drain
- source
- arrangement
- door
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Abstract
L'INVENTION CONCERNE UN AGENCEMENT DE DISPOSITIFS SEMI-CONDUCTEURS A PORTE FLOTTANTE. SELON L'INVENTION, LA PORTE FLOTTANTE 16 ASSOCIEE A UN DISPOSITIF PARTICULIER S'ETEND A TRAVERS LA JONCTION DRAIN-REGION DE CANAL AVEC UN BORD AVANT QUI SE TERMINE SUR LA REGION DE CANAL 14.2; LA PORTE DE COMMANDE ASSOCIEE 20 S'ETEND SUR LA REGION DE CANAL 14.2; ELLE EST ISOLEE DE LA PORTE FLOTTANTE 16 ET SON BORD AVANT SE TERMINE SUR LA REGION DE DRAIN 14.3, SON BORD ARRIERE SE TERMINANT SUR LA REGION DE SOURCE 14.1; LE DEPLACEMENT DU BORD ARRIERE DE LA PORTE FLOTTANTE PAR RAPPORT A LA REGION DE SOURCE PERMET A LA PORTE DE COMMANDE DE CHAQUE DISPOSITIF D'UNE RANGEE DONNEE D'ETRE CONNECTEE A UNE LIGNE COMMUNE ET AUX REGIONS DE SOURCE ET DE DRAIN D'UN DISPOSITIF DONNE D'ETRE LES MEMES REGIONS QUE LES REGIONS DE DRAIN ET DE SOURCE DES DISPOSITIFS ADJACENTS; LES REGIONS SOURCE-DRAIN COMMUNES DE COLONNES RESPECTIVES SONT CONNECTEES EN COMMUN POUR FORMER UN AGENCEMENT ADRESSABLE. L'INVENTION S'APPLIQUE NOTAMMENT AUX MEMOIRES POUR CALCULATEURS.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94672278A | 1978-09-28 | 1978-09-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2437676A1 true FR2437676A1 (fr) | 1980-04-25 |
FR2437676B1 FR2437676B1 (fr) | 1982-12-17 |
Family
ID=25484885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7924057A Granted FR2437676A1 (fr) | 1978-09-28 | 1979-09-27 | Agencement de memoires mortes a porte flottante electriquement programmables |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5546598A (fr) |
DE (1) | DE2937952C2 (fr) |
FR (1) | FR2437676A1 (fr) |
GB (1) | GB2032687B (fr) |
IT (1) | IT1122538B (fr) |
SE (1) | SE7907193L (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2524714A1 (fr) * | 1982-04-01 | 1983-10-07 | Suwa Seikosha Kk | Transistor a couche mince |
EP0164781A3 (en) * | 1984-05-15 | 1987-08-26 | Wafer Scale Integration, Inc. | A self-aligned split gate eprom and a method of manufacta self-aligned split gate eprom and a method of manufacturing the same uring the same |
US4795719A (en) * | 1984-05-15 | 1989-01-03 | Waferscale Integration, Inc. | Self-aligned split gate eprom process |
FR2621737A1 (fr) * | 1987-10-09 | 1989-04-14 | Thomson Semiconducteurs | Memoire en circuit integre |
US4868629A (en) * | 1984-05-15 | 1989-09-19 | Waferscale Integration, Inc. | Self-aligned split gate EPROM |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4409723A (en) * | 1980-04-07 | 1983-10-18 | Eliyahou Harari | Method of forming non-volatile EPROM and EEPROM with increased efficiency |
US4328565A (en) | 1980-04-07 | 1982-05-04 | Eliyahou Harari | Non-volatile eprom with increased efficiency |
DE3141390A1 (de) * | 1981-10-19 | 1983-04-28 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Floating-gate-speicherzelle, bei der das schreiben und loeschen durch injektion heisser ladungstraeger erfolgt |
US4783766A (en) * | 1986-05-30 | 1988-11-08 | Seeq Technology, Inc. | Block electrically erasable EEPROM |
US5087584A (en) * | 1990-04-30 | 1992-02-11 | Intel Corporation | Process for fabricating a contactless floating gate memory array utilizing wordline trench vias |
KR100241524B1 (ko) * | 1996-12-28 | 2000-02-01 | 김영환 | 플래쉬 메모리 셀 |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2285677A1 (fr) * | 1974-09-20 | 1976-04-16 | Siemens Ag | Transistor a effet de champ de memorisation a canal n |
DE2525097A1 (de) * | 1975-06-05 | 1976-12-09 | Siemens Ag | N-kanal-speicher-fet |
DE2643948A1 (de) * | 1976-09-29 | 1978-03-30 | Siemens Ag | Baustein mit in einer matrix angeordneten speicher-fets |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3728695A (en) * | 1971-10-06 | 1973-04-17 | Intel Corp | Random-access floating gate mos memory array |
JPS53108247A (en) * | 1976-12-27 | 1978-09-20 | Texas Instruments Inc | Electrically programmable floating gate semiconductor memory |
-
1979
- 1979-08-29 SE SE7907193A patent/SE7907193L/ not_active Application Discontinuation
- 1979-09-07 IT IT25552/79A patent/IT1122538B/it active
- 1979-09-20 DE DE2937952A patent/DE2937952C2/de not_active Expired
- 1979-09-20 GB GB7932557A patent/GB2032687B/en not_active Expired
- 1979-09-27 FR FR7924057A patent/FR2437676A1/fr active Granted
- 1979-09-27 JP JP12524779A patent/JPS5546598A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2285677A1 (fr) * | 1974-09-20 | 1976-04-16 | Siemens Ag | Transistor a effet de champ de memorisation a canal n |
DE2525097A1 (de) * | 1975-06-05 | 1976-12-09 | Siemens Ag | N-kanal-speicher-fet |
DE2643948A1 (de) * | 1976-09-29 | 1978-03-30 | Siemens Ag | Baustein mit in einer matrix angeordneten speicher-fets |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2524714A1 (fr) * | 1982-04-01 | 1983-10-07 | Suwa Seikosha Kk | Transistor a couche mince |
EP0164781A3 (en) * | 1984-05-15 | 1987-08-26 | Wafer Scale Integration, Inc. | A self-aligned split gate eprom and a method of manufacta self-aligned split gate eprom and a method of manufacturing the same uring the same |
US4795719A (en) * | 1984-05-15 | 1989-01-03 | Waferscale Integration, Inc. | Self-aligned split gate eprom process |
US4868629A (en) * | 1984-05-15 | 1989-09-19 | Waferscale Integration, Inc. | Self-aligned split gate EPROM |
US5021847A (en) * | 1984-05-15 | 1991-06-04 | Waferscale Integration, Inc. | Split gate memory array having staggered floating gate rows and method for making same |
FR2621737A1 (fr) * | 1987-10-09 | 1989-04-14 | Thomson Semiconducteurs | Memoire en circuit integre |
EP0313427A1 (fr) * | 1987-10-09 | 1989-04-26 | STMicroelectronics S.A. | Mémoire en circuit intégré |
Also Published As
Publication number | Publication date |
---|---|
DE2937952A1 (de) | 1980-04-03 |
IT1122538B (it) | 1986-04-23 |
DE2937952C2 (de) | 1983-04-14 |
SE7907193L (sv) | 1980-03-29 |
FR2437676B1 (fr) | 1982-12-17 |
JPS5732514B2 (fr) | 1982-07-12 |
GB2032687B (en) | 1983-03-23 |
IT7925552A0 (it) | 1979-09-07 |
JPS5546598A (en) | 1980-04-01 |
GB2032687A (en) | 1980-05-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |