GB1373960A - Field effect transistors - Google Patents
Field effect transistorsInfo
- Publication number
- GB1373960A GB1373960A GB5675071A GB5675071A GB1373960A GB 1373960 A GB1373960 A GB 1373960A GB 5675071 A GB5675071 A GB 5675071A GB 5675071 A GB5675071 A GB 5675071A GB 1373960 A GB1373960 A GB 1373960A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gate
- source
- effect transistors
- field
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
Abstract
1373960 Field-effect transistors TEXAS INSTRUMENTS Ltd 7 Dec 1971 56750/71 Heading H1K The Figure shows a plan view of a field-effect transistor having source 1, drain 2, and gate 3 electrodes, the gate electrode being of small width, defining a closed figure, and extending over all its length in directions making no more than a small angle {tan<SP>-1</SP>(¢)} to a given (x) direction. The gate may instead follow the outline of a parallelogram or of a double convex lens. In the embodiment shown the source and drain electrodes contact enhanced conductivity regions 8, 9 of an N type epitaxial layer grown on a P type silicon substrate. The gate electrode is of aluminium and may form an alloy junction or a Schottky barrier. Similar gate arrangements may be provided for IGFETs, and any of the devices may be incorporated in integrated circuits.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB5675071A GB1373960A (en) | 1971-12-07 | 1971-12-07 | Field effect transistors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB5675071A GB1373960A (en) | 1971-12-07 | 1971-12-07 | Field effect transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1373960A true GB1373960A (en) | 1974-11-13 |
Family
ID=10477444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5675071A Expired GB1373960A (en) | 1971-12-07 | 1971-12-07 | Field effect transistors |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1373960A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2917690A1 (en) * | 1978-05-09 | 1979-11-15 | Rca Corp | INSULATING FIELD EFFECT TRANSISTOR WITH RING-SHAPED GATE |
-
1971
- 1971-12-07 GB GB5675071A patent/GB1373960A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2917690A1 (en) * | 1978-05-09 | 1979-11-15 | Rca Corp | INSULATING FIELD EFFECT TRANSISTOR WITH RING-SHAPED GATE |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |