GB1226080A - - Google Patents

Info

Publication number
GB1226080A
GB1226080A GB1226080DA GB1226080A GB 1226080 A GB1226080 A GB 1226080A GB 1226080D A GB1226080D A GB 1226080DA GB 1226080 A GB1226080 A GB 1226080A
Authority
GB
United Kingdom
Prior art keywords
type
region
source
island
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
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English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1226080A publication Critical patent/GB1226080A/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • A—HUMAN NECESSITIES
    • A45—HAND OR TRAVELLING ARTICLES
    • A45C—PURSES; LUGGAGE; HAND CARRIED BAGS
    • A45C15/00—Purses, bags, luggage or other receptacles covered by groups A45C1/00 - A45C11/00, combined with other objects or articles
    • A45C15/04—Purses, bags, luggage or other receptacles covered by groups A45C1/00 - A45C11/00, combined with other objects or articles with mirrors
    • A—HUMAN NECESSITIES
    • A45—HAND OR TRAVELLING ARTICLES
    • A45C—PURSES; LUGGAGE; HAND CARRIED BAGS
    • A45C3/00—Flexible luggage; Handbags
    • A45C3/10—Beach-bags; Watertight beach-bags
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact
GB1226080D 1967-11-28 1968-09-18 Expired GB1226080A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68864867A 1967-11-28 1967-11-28

Publications (1)

Publication Number Publication Date
GB1226080A true GB1226080A (fr) 1971-03-24

Family

ID=24765208

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1226080D Expired GB1226080A (fr) 1967-11-28 1968-09-18
GB4441868A Expired GB1224335A (en) 1967-11-28 1968-09-18 N-channel field effect transistor

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB4441868A Expired GB1224335A (en) 1967-11-28 1968-09-18 N-channel field effect transistor

Country Status (3)

Country Link
DE (1) DE1811492A1 (fr)
GB (2) GB1226080A (fr)
NL (1) NL6815161A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2127216A (en) * 1979-07-31 1984-04-04 Sharp Kk Improved structure of thin film transistors and manufacture method thereof

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5024084A (fr) * 1973-07-05 1975-03-14
US4053916A (en) * 1975-09-04 1977-10-11 Westinghouse Electric Corporation Silicon on sapphire MOS transistor
US4078947A (en) * 1976-08-05 1978-03-14 International Business Machines Corporation Method for forming a narrow channel length MOS field effect transistor
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5130767C1 (en) * 1979-05-14 2001-08-14 Int Rectifier Corp Plural polygon source pattern for mosfet
JPS5799777A (en) * 1980-12-12 1982-06-21 Toshiba Corp Metal oxide semiconductor type semiconductor device
JPS5998557A (ja) * 1982-11-27 1984-06-06 Nissan Motor Co Ltd Ｍｏｓトランジスタ
EP0110320B1 (fr) * 1982-11-27 1987-03-11 Nissan Motor Co., Ltd. Transistor de type MOS
GB8400336D0 (en) * 1984-01-06 1984-02-08 Texas Instruments Ltd Field effect transistors
JPS62274767A (ja) * 1986-05-23 1987-11-28 Fujitsu Ltd 高耐圧半導体装置及びその製造方法
JP3231345B2 (ja) * 1991-03-08 2001-11-19 株式会社日立製作所 半導体記憶装置及びその製造方法
US5798287A (en) * 1993-12-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Method for forming a power MOS device chip
EP0660402B1 (fr) * 1993-12-24 1998-11-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Dispositif semi-conducteur de puissance
EP0660396B1 (fr) * 1993-12-24 1998-11-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Ensemble de dispositif de puissance du type puce MOS et son empaquetage
EP0697728B1 (fr) * 1994-08-02 1999-04-21 STMicroelectronics S.r.l. Dispositif à semi-conducteur de puissance en technologie MOS puce et boítier assemblé
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2127216A (en) * 1979-07-31 1984-04-04 Sharp Kk Improved structure of thin film transistors and manufacture method thereof

Also Published As

Publication number Publication date
NL6815161A (fr) 1969-05-30
DE1811492A1 (de) 1969-08-07
GB1224335A (en) 1971-03-10

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees