FR2285677A1 - Transistor a effet de champ de memorisation a canal n - Google Patents

Transistor a effet de champ de memorisation a canal n

Info

Publication number
FR2285677A1
FR2285677A1 FR7528356A FR7528356A FR2285677A1 FR 2285677 A1 FR2285677 A1 FR 2285677A1 FR 7528356 A FR7528356 A FR 7528356A FR 7528356 A FR7528356 A FR 7528356A FR 2285677 A1 FR2285677 A1 FR 2285677A1
Authority
FR
France
Prior art keywords
field effect
effect transistor
channel
memorization field
channel memorization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7528356A
Other languages
English (en)
Other versions
FR2285677B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2445137A external-priority patent/DE2445137C3/de
Priority claimed from DE19752505816 external-priority patent/DE2505816C3/de
Priority claimed from DE2513207A external-priority patent/DE2513207C2/de
Priority claimed from DE19752525097 external-priority patent/DE2525097C3/de
Priority claimed from DE19752525062 external-priority patent/DE2525062C2/de
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2285677A1 publication Critical patent/FR2285677A1/fr
Application granted granted Critical
Publication of FR2285677B1 publication Critical patent/FR2285677B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
FR7528356A 1974-09-20 1975-09-16 Transistor a effet de champ de memorisation a canal n Granted FR2285677A1 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE2445137A DE2445137C3 (de) 1974-09-20 1974-09-20 Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix
DE19752505816 DE2505816C3 (de) 1974-09-20 1975-02-12 Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix
DE2513207A DE2513207C2 (de) 1974-09-20 1975-03-25 n-Kanal-Speicher-FET
DE19752525097 DE2525097C3 (de) 1975-06-05 1975-06-05 Verfahren zum Betrieb eines n-Kanal-Speicher-FET
DE19752525062 DE2525062C2 (de) 1975-06-05 1975-06-05 Matrixanordnung aus n-Kanal-Speicher-FET

Publications (2)

Publication Number Publication Date
FR2285677A1 true FR2285677A1 (fr) 1976-04-16
FR2285677B1 FR2285677B1 (fr) 1981-05-29

Family

ID=27510366

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7528356A Granted FR2285677A1 (fr) 1974-09-20 1975-09-16 Transistor a effet de champ de memorisation a canal n

Country Status (11)

Country Link
JP (1) JPS5157255A (fr)
AT (1) AT365000B (fr)
AU (1) AU498494B2 (fr)
BE (1) BE833633A (fr)
CA (1) CA1070427A (fr)
CH (1) CH607233A5 (fr)
DK (1) DK143923C (fr)
FR (1) FR2285677A1 (fr)
GB (1) GB1517927A (fr)
IT (1) IT1042632B (fr)
NL (1) NL175561C (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2403624A1 (fr) * 1977-09-16 1979-04-13 Fairchild Camera Instr Co Cellule de memoire inalterable a transistors a effet de champ a porte isolee
FR2437676A1 (fr) * 1978-09-28 1980-04-25 Rca Corp Agencement de memoires mortes a porte flottante electriquement programmables

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391585A (en) * 1977-04-04 1978-08-11 Agency Of Ind Science & Technol Nonvolatile field effect transistor
JPS5560469U (fr) * 1978-10-20 1980-04-24
JPS5571072A (en) * 1978-11-24 1980-05-28 Hitachi Ltd Semiconductor nonvolatile memory
JPS57160163A (en) * 1981-03-27 1982-10-02 Agency Of Ind Science & Technol Nonvolatile semiconductor memory
JPS5864068A (ja) * 1981-10-14 1983-04-16 Agency Of Ind Science & Technol 不揮発性半導体メモリの書き込み方法
JPH04307974A (ja) * 1991-04-05 1992-10-30 Sharp Corp 電気的消去可能不揮発性半導体記憶装置
CN111739572A (zh) * 2019-03-25 2020-10-02 亿而得微电子股份有限公司 电子写入可擦除可重写只读存储器的低压快速擦除方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526148B2 (fr) * 1972-05-18 1977-02-19

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2403624A1 (fr) * 1977-09-16 1979-04-13 Fairchild Camera Instr Co Cellule de memoire inalterable a transistors a effet de champ a porte isolee
FR2437676A1 (fr) * 1978-09-28 1980-04-25 Rca Corp Agencement de memoires mortes a porte flottante electriquement programmables

Also Published As

Publication number Publication date
CH607233A5 (fr) 1978-11-30
NL7511017A (nl) 1976-03-23
GB1517927A (en) 1978-07-19
NL175561B (nl) 1984-06-18
ATA646575A (de) 1981-04-15
FR2285677B1 (fr) 1981-05-29
DK143923C (da) 1982-04-19
BE833633A (fr) 1976-03-19
CA1070427A (fr) 1980-01-22
DK143923B (da) 1981-10-26
AT365000B (de) 1981-11-25
IT1042632B (it) 1980-01-30
AU498494B2 (en) 1979-03-15
AU8479775A (en) 1977-03-17
JPS5157255A (fr) 1976-05-19
NL175561C (nl) 1984-11-16
DK419975A (da) 1976-03-21

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