FR2437067A1 - Detecteur de pression monolithique a semi-conducteurs avec des elements piezo-resistants, ainsi que procede pour sa fabrication - Google Patents

Detecteur de pression monolithique a semi-conducteurs avec des elements piezo-resistants, ainsi que procede pour sa fabrication

Info

Publication number
FR2437067A1
FR2437067A1 FR7923625A FR7923625A FR2437067A1 FR 2437067 A1 FR2437067 A1 FR 2437067A1 FR 7923625 A FR7923625 A FR 7923625A FR 7923625 A FR7923625 A FR 7923625A FR 2437067 A1 FR2437067 A1 FR 2437067A1
Authority
FR
France
Prior art keywords
piezo
semiconductor pressure
membrane
monolithic semiconductor
resistant elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7923625A
Other languages
English (en)
Other versions
FR2437067B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2437067A1 publication Critical patent/FR2437067A1/fr
Application granted granted Critical
Publication of FR2437067B1 publication Critical patent/FR2437067B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

A.DETECTEUR DE PRESSION MONOLITHIQUE A SEMI-CONDUCTEURS AVEC DES ELEMENTS PIEZO-RESISTANTS, AINSI QUE PROCEDE POUR SA FABRICATION. B.DETECTEUR CARACTERISE EN CE QUE LA MEMBRANE EST DE FORME ELLIPTIQUE DE MANIERE A OBTENIR UNE BONNE LINEARITE. SUR LE SUBSTRAT 1 DE SILICIUM N, SE TROUVE LA COUCHE EPITARQUE 2 DE RESISTANCE OHMIQUE ELEVEE QUI, DANS LA ZONE DE LA CAVITE 3 CREUSEE PAR CORROSION A PARTIR DU BAS, CONSTITUE LA MEMBRANE 4. DANS CETTE MEMBRANE, SONT INTEGREES LES RESISTANCES PIEZO-RESISTANTES 5 QUI PEUVENT ETRE PUREMENT OHMIQUES (ZONE P DIFFUSEE OU IMPLANTEE) OU CONSTITUEES DE TRANSISTORS, PAR EXEMPLE DE 4TRANSISTORS A EFFET DE CHAMP A GRILLE ISOLEE. C.L'INVENTION S'APPLIQUE NOTAMMENT AU CONTROLE DU FONCTIONNEMENT DES MOTEURS D'AUTOMOBILES.
FR7923625A 1978-09-22 1979-09-21 Detecteur de pression monolithique a semi-conducteurs avec des elements piezo-resistants, ainsi que procede pour sa fabrication Granted FR2437067A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2841312A DE2841312C2 (de) 1978-09-22 1978-09-22 Monolithischer Halbleiter-Drucksensor und Verfahren zu dessen Herstellung

Publications (2)

Publication Number Publication Date
FR2437067A1 true FR2437067A1 (fr) 1980-04-18
FR2437067B1 FR2437067B1 (fr) 1983-02-25

Family

ID=6050173

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7923625A Granted FR2437067A1 (fr) 1978-09-22 1979-09-21 Detecteur de pression monolithique a semi-conducteurs avec des elements piezo-resistants, ainsi que procede pour sa fabrication

Country Status (3)

Country Link
US (1) US4275406A (fr)
DE (1) DE2841312C2 (fr)
FR (1) FR2437067A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2496261A1 (fr) * 1980-12-12 1982-06-18 Commissariat Energie Atomique Dispositif de mesure de pressions en atmosphere agressive
FR2539914A1 (fr) * 1983-01-26 1984-07-27 Hitachi Ltd Procede de fabrication d'un diaphragme a semi-conducteur par attaque selective

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56118374A (en) * 1980-02-22 1981-09-17 Hitachi Ltd Semiconductor strain gauge
US4317126A (en) * 1980-04-14 1982-02-23 Motorola, Inc. Silicon pressure sensor
JPS5995420A (ja) * 1982-11-24 1984-06-01 Hitachi Ltd Ｍｏｓ型センサ
JPS59117271A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 圧力感知素子を有する半導体装置とその製造法
US4522072A (en) * 1983-04-22 1985-06-11 Insouth Microsystems, Inc. Electromechanical transducer strain sensor arrangement and construction
US4683755A (en) * 1985-11-15 1987-08-04 Imo Delaval Inc. Biaxial strain gage systems
DE3814054A1 (de) * 1988-04-26 1989-11-09 Texas Instruments Deutschland Auf die einwirkung einer kraft ansprechender sensor
US4996627A (en) * 1989-01-30 1991-02-26 Dresser Industries, Inc. High sensitivity miniature pressure transducer
US4889590A (en) * 1989-04-27 1989-12-26 Motorola Inc. Semiconductor pressure sensor means and method
JPH04105369A (ja) * 1990-08-24 1992-04-07 Honda Motor Co Ltd 半導体センサ
EP0645621A3 (fr) * 1993-09-28 1995-11-08 Siemens Ag Capteur.
DE4334080C2 (de) * 1993-10-06 1996-05-02 Telefunken Microelectron Piezoresistive Sensorstruktur
FI98853C (fi) * 1995-03-14 1997-08-25 Beamex Ab Oy Ylipainesuoja
US6201237B1 (en) 1998-12-18 2001-03-13 Corning Incorporated Fiber optic sensor
US6297069B1 (en) * 1999-01-28 2001-10-02 Honeywell Inc. Method for supporting during fabrication mechanical members of semi-conductive dies, wafers, and devices and an associated intermediate device assembly
US6427539B1 (en) 2000-07-31 2002-08-06 Motorola, Inc. Strain gauge
US6608370B1 (en) * 2002-01-28 2003-08-19 Motorola, Inc. Semiconductor wafer having a thin die and tethers and methods of making the same
US6772509B2 (en) 2002-01-28 2004-08-10 Motorola, Inc. Method of separating and handling a thin semiconductor die on a wafer
EP2485028B1 (fr) * 2011-02-07 2015-04-01 ELMOS Semiconductor AG Etage amplificateur sensible à la pression
EP2597442A1 (fr) * 2011-11-28 2013-05-29 Honeywell Romania SRL Capteurs de pression et procédés de détection de la pression
CH707008A1 (de) * 2012-09-27 2014-03-31 Kistler Holding Ag Dehnungstransmitter.
JP5883771B2 (ja) 2012-11-26 2016-03-15 日立オートモティブシステムズ株式会社 圧力センサ
US11548781B2 (en) 2017-11-17 2023-01-10 Sciosense B.V. Attachment of stress sensitive integrated circuit dies
US10809139B2 (en) 2018-02-14 2020-10-20 Carefusion 303, Inc. Integrated sensor to monitor fluid delivery
CN109764998A (zh) * 2018-12-27 2019-05-17 西安交通大学 一种膜片式石墨烯mems微压传感器芯片及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1278210A (en) * 1970-03-14 1972-06-21 Ferranti Ltd Improvements relating to semiconductir strain transducers
US3994009A (en) * 1973-02-12 1976-11-23 Honeywell Inc. Stress sensor diaphragms over recessed substrates
US4065971A (en) * 1975-07-04 1978-01-03 Hitachi, Ltd. Semiconductor pressure transducer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL162254B (nl) * 1968-11-29 1979-11-15 Philips Nv Halfgeleiderinrichting voor het omzetten van mechanische spanningen in elektrische signalen en werkwijze voor het vervaardigen daarvan.
US4131524A (en) * 1969-11-24 1978-12-26 U.S. Philips Corporation Manufacture of semiconductor devices
FR2143553B1 (fr) * 1971-06-29 1974-05-31 Sescosem
US3758830A (en) * 1972-04-10 1973-09-11 Hewlett Packard Co Transducer formed in peripherally supported thin semiconductor web
US3893228A (en) * 1972-10-02 1975-07-08 Motorola Inc Silicon pressure sensor
US4125820A (en) * 1975-10-06 1978-11-14 Honeywell Inc. Stress sensor apparatus
US4204185A (en) * 1977-10-13 1980-05-20 Kulite Semiconductor Products, Inc. Integral transducer assemblies employing thin homogeneous diaphragms

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1278210A (en) * 1970-03-14 1972-06-21 Ferranti Ltd Improvements relating to semiconductir strain transducers
US3994009A (en) * 1973-02-12 1976-11-23 Honeywell Inc. Stress sensor diaphragms over recessed substrates
US4065971A (en) * 1975-07-04 1978-01-03 Hitachi, Ltd. Semiconductor pressure transducer

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *
EXBK/78 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2496261A1 (fr) * 1980-12-12 1982-06-18 Commissariat Energie Atomique Dispositif de mesure de pressions en atmosphere agressive
FR2539914A1 (fr) * 1983-01-26 1984-07-27 Hitachi Ltd Procede de fabrication d'un diaphragme a semi-conducteur par attaque selective

Also Published As

Publication number Publication date
US4275406A (en) 1981-06-23
DE2841312C2 (de) 1985-06-05
FR2437067B1 (fr) 1983-02-25
DE2841312A1 (de) 1980-04-03

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