KR970054554A - 반도체 가속도센서 제조방법 - Google Patents

반도체 가속도센서 제조방법 Download PDF

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Publication number
KR970054554A
KR970054554A KR1019950047465A KR19950047465A KR970054554A KR 970054554 A KR970054554 A KR 970054554A KR 1019950047465 A KR1019950047465 A KR 1019950047465A KR 19950047465 A KR19950047465 A KR 19950047465A KR 970054554 A KR970054554 A KR 970054554A
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KR
South Korea
Prior art keywords
manufacturing
acceleration sensor
mass pad
silicon wafer
forming
Prior art date
Application number
KR1019950047465A
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English (en)
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KR100193426B1 (ko
Inventor
김우정
백승호
Original Assignee
정몽원
만도기계 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 정몽원, 만도기계 주식회사 filed Critical 정몽원
Priority to KR1019950047465A priority Critical patent/KR100193426B1/ko
Publication of KR970054554A publication Critical patent/KR970054554A/ko
Application granted granted Critical
Publication of KR100193426B1 publication Critical patent/KR100193426B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Pressure Sensors (AREA)

Abstract

본 발명은 반도체 가속도센서의 제조방법에 관한 것으로, 특히 인가되는 가속도에 대한 압저항체(13)저항값 변화에 의해 가속도를 감지하는 반도체 가속도 센서의 제조방법에 있어서, 압저항체(13) 및 전극(18)이 형성된 실리콘 웨이퍼(30)의 아랫면을 식각하여 다이아프램(16)을 형성하는 단계, 상기 다이아프램(16)이 형성된 실리콘 웨이퍼(30)의 윗면에 니켈-크롬/금의 금속박막(17)을 증착시킨 뒤 일정 부분의 금속박막을 식각하여 질량패드를 형성하는 단계, 납/주석/은으로 된 금속 페이스트(19)를 질량패드위에 올린뒤 열처리하여 질량패드와 접착시킴으로써 질량을 형성하는 단계를 구비하여 반도체 압력센서 및 반도체 가속도센서의 제조공정상의 상호호환성을 향상시키며, 제조공정이 간소화되는 장점이 있다.

Description

반도체 가속도센서 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 따른 반도체 가속도센서의 평면도.

Claims (1)

  1. 인가되는 가속도에 대한 압저항체(13)의 저항값 변화에 의해 가속도를 감지하는 반도체 가속도 센서의 제조방법에 있어서, 압저항체(13) 및 전극(18)이 형성된 실리콘 웨이퍼(30)의 아랫면을 식각하여 다이아프램(16)을 형성하는 단계, 상기 다이아프램(16)이 형성된 실리콘 웨이퍼(30)의 윗면에 니켈-크롬/금의 금속박막(17)을 증착시킨 뒤 일정 부분의 금속박막을 식각하여 질량패드를 형성하는 단계, 납/주석/은으로 된 금속 페이스트(19)를 질량패드위에 올린뒤 열처리하여 질량패드와 접착시킴으로써 질량을 형성하는 단계를 구비한 것을 특징으로 하는 반도체 가속도센서의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950047465A 1995-12-07 1995-12-07 반도체 가속도센서 제조방법 KR100193426B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950047465A KR100193426B1 (ko) 1995-12-07 1995-12-07 반도체 가속도센서 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950047465A KR100193426B1 (ko) 1995-12-07 1995-12-07 반도체 가속도센서 제조방법

Publications (2)

Publication Number Publication Date
KR970054554A true KR970054554A (ko) 1997-07-31
KR100193426B1 KR100193426B1 (ko) 1999-07-01

Family

ID=19438311

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950047465A KR100193426B1 (ko) 1995-12-07 1995-12-07 반도체 가속도센서 제조방법

Country Status (1)

Country Link
KR (1) KR100193426B1 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100282435B1 (ko) * 1998-03-13 2001-04-02 김영환 가속도센서의제조방법
KR100282434B1 (ko) * 1998-03-13 2001-04-02 김영환 가속도센서의제조방법
KR100375970B1 (ko) * 1998-08-17 2003-09-13 주식회사 만도 가속도센서의제조방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100282435B1 (ko) * 1998-03-13 2001-04-02 김영환 가속도센서의제조방법
KR100282434B1 (ko) * 1998-03-13 2001-04-02 김영환 가속도센서의제조방법
KR100375970B1 (ko) * 1998-08-17 2003-09-13 주식회사 만도 가속도센서의제조방법

Also Published As

Publication number Publication date
KR100193426B1 (ko) 1999-07-01

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