FR2430065B1 - - Google Patents

Info

Publication number
FR2430065B1
FR2430065B1 FR7916730A FR7916730A FR2430065B1 FR 2430065 B1 FR2430065 B1 FR 2430065B1 FR 7916730 A FR7916730 A FR 7916730A FR 7916730 A FR7916730 A FR 7916730A FR 2430065 B1 FR2430065 B1 FR 2430065B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7916730A
Other versions
FR2430065A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2430065A1 publication Critical patent/FR2430065A1/fr
Application granted granted Critical
Publication of FR2430065B1 publication Critical patent/FR2430065B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
FR7916730A 1978-06-30 1979-06-28 Memoire non volatile, reprogrammable electriquement par mots Granted FR2430065A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2828855A DE2828855C2 (de) 1978-06-30 1978-06-30 Wortweise elektrisch umprogrammierbarer, nichtflüchtiger Speicher sowie Verfahren zum Löschen bzw. Einschreiben eines bzw. in einen solchen Speicher(s)

Publications (2)

Publication Number Publication Date
FR2430065A1 FR2430065A1 (fr) 1980-01-25
FR2430065B1 true FR2430065B1 (fr) 1984-04-06

Family

ID=6043239

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7916730A Granted FR2430065A1 (fr) 1978-06-30 1979-06-28 Memoire non volatile, reprogrammable electriquement par mots

Country Status (5)

Country Link
US (1) US4279024A (fr)
JP (1) JPS558696A (fr)
DE (1) DE2828855C2 (fr)
FR (1) FR2430065A1 (fr)
GB (1) GB2028615B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6570790B1 (en) 1988-06-08 2003-05-27 Sandisk Corporation Highly compact EPROM and flash EEPROM devices

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IT1224062B (it) * 1979-09-28 1990-09-26 Ates Componenti Elettron Metodo di programmazione per una memoria a semiconduttore non volatile elettricamente alterabile
DE3103807A1 (de) 1980-02-04 1981-12-24 Texas Instruments Inc., 75222 Dallas, Tex. "1-aus-n-decoder fuer einen halbleiterspeicher o.dgl., verfahren zum auswaehlen von einer aus n leitungen in einer matrix und adressdecodierschaltungsanordnung"
US4377857A (en) * 1980-11-18 1983-03-22 Fairchild Camera & Instrument Electrically erasable programmable read-only memory
US4394750A (en) * 1981-07-10 1983-07-19 Motorola, Inc. Prom erase detector
US4408306A (en) * 1981-09-28 1983-10-04 Motorola, Inc. Column and row erasable EEPROM
JPS5870491A (ja) * 1981-10-21 1983-04-26 Nec Corp 集積回路装置
DE3205476A1 (de) * 1982-02-16 1983-08-25 Siemens AG, 1000 Berlin und 8000 München Wortweise elektrisch umprogrammierbarer nichtfluechtiger speicher sowie verwendung eines solchen speichers
DE3205473A1 (de) * 1982-02-16 1983-08-25 Siemens AG, 1000 Berlin und 8000 München Verfahren und anordnung zur funktionspruefung eines elektrisch wortweise umprogrammierbaren speichers
JPS59104796A (ja) * 1982-12-03 1984-06-16 Mitsubishi Electric Corp 不揮発性半導体メモリ装置
JPS59110096A (ja) * 1982-12-13 1984-06-25 Mitsubishi Electric Corp 不揮発性半導体メモリ装置
DE3409776A1 (de) * 1983-03-17 1984-09-20 ROMOX Inc., Campbell, Calif. In einer kassette angeordneter, wiederprogrammierbarer speicher sowie verfahren zu dessen programmierung
DE3315047A1 (de) * 1983-04-26 1984-10-31 Siemens AG, 1000 Berlin und 8000 München Integrierte schaltung mit einem als nichtfluechtiger schreib-lese-speicher ausgestalteten anwendungsspeicher
US4564922A (en) * 1983-10-14 1986-01-14 Pitney Bowes Inc. Postage meter with power-failure resistant memory
US4675673A (en) * 1984-01-27 1987-06-23 Oliver Douglas E Programmable pin driver system
NL8400661A (nl) * 1984-03-01 1985-10-01 Philips Nv Halfgeleiderinrichting met tenminste een niet-vluchtige geheugentransistor.
US4599707A (en) * 1984-03-01 1986-07-08 Signetics Corporation Byte wide EEPROM with individual write circuits and write prevention means
US5136546A (en) * 1984-09-26 1992-08-04 Hitachi, Ltd. Semiconductor memory
JPS6180597A (ja) * 1984-09-26 1986-04-24 Hitachi Ltd 半導体記憶装置
US4698790A (en) * 1985-07-09 1987-10-06 Motorola, Inc. Programmable read only memory adaptive row driver circuit
US4685083A (en) * 1985-10-03 1987-08-04 Thomson Components-Mostek Corporation Improved nonvolatile memory circuit using a dual node floating gate memory cell
DE3543540A1 (de) * 1985-12-10 1987-06-11 Bosch Gmbh Robert Verfahren zur wiedergabe von auf magnetband gespeicherten videosignalen mit einer von der bandgeschwindigkeit bei der aufnahme abweichenden bandgeschwindigkeit und schaltungsanordnung hierfuer
JP2513462B2 (ja) * 1986-03-26 1996-07-03 株式会社日立製作所 マイクロ・コンピユ−タ
JPS63106996A (ja) * 1986-10-24 1988-05-12 Hitachi Ltd 半導体集積回路装置
FR2605447B1 (fr) * 1986-10-20 1988-12-09 Eurotechnique Sa Memoire non volatile programmable electriquement
US4797856A (en) * 1987-04-16 1989-01-10 Intel Corporation Self-limiting erase scheme for EEPROM
FR2630574A1 (fr) * 1988-04-26 1989-10-27 Sgs Thomson Microelectronics Memoire programmable electriquement avec circuit de controle de programmation et procede correspondant
KR900019027A (ko) * 1988-05-23 1990-12-22 미다 가쓰시게 불휘발성 반도체 기억장치
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5293560A (en) * 1988-06-08 1994-03-08 Eliyahou Harari Multi-state flash EEPROM system using incremental programing and erasing methods
US5043940A (en) * 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
US4888738A (en) * 1988-06-29 1989-12-19 Seeq Technology Current-regulated, voltage-regulated erase circuit for EEPROM memory
US5315547A (en) * 1988-07-11 1994-05-24 Hitachi, Ltd. Nonvolatile semiconductor memory device with selective tow erasure
US5497462A (en) * 1988-07-20 1996-03-05 Siemens Aktiengesellschaft Method and circuit for protecting circuit configurations having an electrically programmable non-volatile memory
JP2648840B2 (ja) * 1988-11-22 1997-09-03 株式会社日立製作所 半導体記憶装置
US5138575A (en) * 1988-12-19 1992-08-11 Fujitsu Limited Electricaly erasable and programmable read only memory with a discharge device
JP2645122B2 (ja) * 1989-01-20 1997-08-25 株式会社東芝 不揮発性半導体メモリ
US5844842A (en) * 1989-02-06 1998-12-01 Hitachi, Ltd. Nonvolatile semiconductor memory device
EP0617363B1 (fr) 1989-04-13 2000-01-26 SanDisk Corporation Substitution de cellules defectueuses dans une matrice EEProm
US7447069B1 (en) 1989-04-13 2008-11-04 Sandisk Corporation Flash EEprom system
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
EP0403822B1 (fr) * 1989-06-19 1994-10-12 Texas Instruments Incorporated Circuit et procédé pour le conditionnement d'EEPROMS remis à zéro avant la programmation
US5065364A (en) * 1989-09-15 1991-11-12 Intel Corporation Apparatus for providing block erasing in a flash EPROM
KR930000869B1 (ko) * 1989-11-30 1993-02-08 삼성전자 주식회사 페이지 소거 가능한 플래쉬형 이이피롬 장치
US5200920A (en) * 1990-02-08 1993-04-06 Altera Corporation Method for programming programmable elements in programmable devices
JP3448051B2 (ja) * 1990-03-31 2003-09-16 株式会社東芝 不揮発性半導体記憶装置
EP0477985A2 (fr) * 1990-09-27 1992-04-01 Oki Electric Industry Co., Ltd. Circuit mémoire à semi-conducteurs
GB2251324B (en) * 1990-12-31 1995-05-10 Intel Corp File structure for a non-volatile semiconductor memory
GB2251323B (en) * 1990-12-31 1994-10-12 Intel Corp Disk emulation for a non-volatile semiconductor memory
US5220531A (en) * 1991-01-02 1993-06-15 Information Storage Devices, Inc. Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback
JPH04310697A (ja) * 1991-04-10 1992-11-02 Nec Corp 不揮発性半導体記憶装置の起動方法
US6230233B1 (en) * 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US5357462A (en) * 1991-09-24 1994-10-18 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
US5224070A (en) * 1991-12-11 1993-06-29 Intel Corporation Apparatus for determining the conditions of programming circuitry used with flash EEPROM memory
US6781895B1 (en) * 1991-12-19 2004-08-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
US5347489A (en) * 1992-04-21 1994-09-13 Intel Corporation Method and circuitry for preconditioning shorted rows in a nonvolatile semiconductor memory incorporating row redundancy
JP2502008B2 (ja) * 1992-06-04 1996-05-29 株式会社東芝 不揮発性半導体メモリ
US6000843A (en) * 1992-07-03 1999-12-14 Nippon Steel Corporation Electrically alterable nonvolatile semiconductor memory
US5369616A (en) * 1992-10-30 1994-11-29 Intel Corporation Method for assuring that an erase process for a memory array has been properly completed
US5452251A (en) * 1992-12-03 1995-09-19 Fujitsu Limited Semiconductor memory device for selecting and deselecting blocks of word lines
US5339270A (en) * 1993-06-23 1994-08-16 Vlsi Technology, Inc. AC drain voltage charging source for PROM devices
US5422842A (en) * 1993-07-08 1995-06-06 Sundisk Corporation Method and circuit for simultaneously programming and verifying the programming of selected EEPROM cells
JP3512833B2 (ja) * 1993-09-17 2004-03-31 株式会社東芝 不揮発性半導体記憶装置
KR0169267B1 (ko) 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
US5619454A (en) * 1993-11-15 1997-04-08 Micron Technology, Inc. Programming method for healing over-erased cells for a flash memory device
US5424993A (en) * 1993-11-15 1995-06-13 Micron Technology, Inc. Programming method for the selective healing of over-erased cells on a flash erasable programmable read-only memory device
US5650965A (en) * 1993-11-15 1997-07-22 Micron Technology, Inc. Method of narrowing flash memory device threshold voltage distribution
US5633823A (en) * 1994-12-01 1997-05-27 Micron Technology, Inc. Method of narrowing flash memory device threshold voltage distribution
FR2713008B1 (fr) * 1993-11-23 1995-12-22 Sgs Thomson Microelectronics Mémoire non volatile modifiable électriquement avec contrôle d'écriture.
US5765175A (en) * 1994-08-26 1998-06-09 Intel Corporation System and method for removing deleted entries in file systems based on write-once or erase-slowly media
US5594685A (en) * 1994-12-16 1997-01-14 National Semiconductor Corporation Method for programming a single EPROM or flash memory cell to store multiple bits of data that utilizes a punchthrough current
US5808937A (en) * 1994-12-16 1998-09-15 National Semiconductor Corporation Self-convergent method for programming FLASH and EEPROM memory cells that moves the threshold voltage from an erased threshold voltage range to one of a plurality of programmed threshold voltage ranges
KR0142364B1 (ko) * 1995-01-07 1998-07-15 김광호 소거된 메모리 쎌의 임계전압 마아진 확보를 위한 공통 소오스라인 구동회로
US5550772A (en) * 1995-02-13 1996-08-27 National Semiconductor Corporation Memory array utilizing multi-state memory cells
US5511021A (en) * 1995-02-22 1996-04-23 National Semiconductor Corporation Method for programming a single EPROM or flash memory cell to store multiple levels of data that utilizes a forward-biased source-to-substrate junction
US5557567A (en) * 1995-04-06 1996-09-17 National Semiconductor Corp. Method for programming an AMG EPROM or flash memory when cells of the array are formed to store multiple bits of data
US5587949A (en) * 1995-04-27 1996-12-24 National Semiconductor Corporation Method for programming an ETOX EPROM or flash memory when cells of the array are formed to store multiple bits of data
US6801979B1 (en) 1995-07-31 2004-10-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US6757800B1 (en) 1995-07-31 2004-06-29 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6081878A (en) 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
KR100217917B1 (ko) * 1995-12-20 1999-09-01 김영환 플래쉬 메모리셀의 문턱전압 조정회로
US6411546B1 (en) 1997-03-31 2002-06-25 Lexar Media, Inc. Nonvolatile memory using flexible erasing methods and method and system for using same
AU1729100A (en) 1998-11-17 2000-06-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US6850441B2 (en) * 2002-01-18 2005-02-01 Sandisk Corporation Noise reduction technique for transistors and small devices utilizing an episodic agitation
JP4049641B2 (ja) * 2002-09-06 2008-02-20 株式会社ルネサステクノロジ 不揮発性半導体記憶装置

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US3611319A (en) * 1969-03-06 1971-10-05 Teledyne Inc Electrically alterable read only memory
DE2643987C2 (de) * 1974-09-20 1984-03-29 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
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US4148044A (en) * 1976-09-29 1979-04-03 Siemens Aktiengesellschaft N-channel memory field effect transistor
DE2743422A1 (de) * 1977-09-27 1979-03-29 Siemens Ag Wortweise loeschbarer, nicht fluechtiger speicher in floating-gate-technik

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6570790B1 (en) 1988-06-08 2003-05-27 Sandisk Corporation Highly compact EPROM and flash EEPROM devices

Also Published As

Publication number Publication date
GB2028615B (en) 1982-06-16
DE2828855A1 (de) 1980-01-03
FR2430065A1 (fr) 1980-01-25
JPH0123878B2 (fr) 1989-05-09
US4279024A (en) 1981-07-14
JPS558696A (en) 1980-01-22
DE2828855C2 (de) 1982-11-18
GB2028615A (en) 1980-03-05

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