FR2422261A1 - Transducteur de pression absolue semi-conducteur et procede de fabrication - Google Patents

Transducteur de pression absolue semi-conducteur et procede de fabrication

Info

Publication number
FR2422261A1
FR2422261A1 FR7907650A FR7907650A FR2422261A1 FR 2422261 A1 FR2422261 A1 FR 2422261A1 FR 7907650 A FR7907650 A FR 7907650A FR 7907650 A FR7907650 A FR 7907650A FR 2422261 A1 FR2422261 A1 FR 2422261A1
Authority
FR
France
Prior art keywords
assembly
silicon
diaphragm
pressure transducer
absolute pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7907650A
Other languages
English (en)
Other versions
FR2422261B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2422261A1 publication Critical patent/FR2422261A1/fr
Application granted granted Critical
Publication of FR2422261B1 publication Critical patent/FR2422261B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G01L19/0069—Electrical connection means from the sensor to its support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/145—Housings with stress relieving means
    • G01L19/146—Housings with stress relieving means using flexible element between the transducer and the support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Child & Adolescent Psychology (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

Description d'un assemblage transducteur de pression absolue semi-conducteur comportant un diaphragme en silicium et un élément recouvrant. L'assemblage de diaphragme en silicium possède un diaphragme circulaire sensible à la pression, à la surface duquel sont diffusés des piezorésistors et des circuits conducteurs. L'élément recouvrant en borosilicate de verre comporte un trou circulaire qui y est formé. Une couche inerte de dioxyde de silicium est disposée sur la surface de l'assemblage où sont diffusés les piezorésistors et les circuits conducteurs. De plus une couche conductrice est formée sur la couche inerte en évaporant, par exemple, du silicium. L'élément recouvrant en verre est assemblé au diaphragme en silicium par soudage Anordique. Cest-à-dire que l'assemblage du diaphragme en silicium et l'élément recouvrant en verre sont chauffés jusqu'à une certaine température, et une tension relativement élevée est appliquée aux bornes de la couche conductrice de l'assemblage et de l'élément recouvrant en verre.
FR7907650A 1978-04-05 1979-03-27 Transducteur de pression absolue semi-conducteur et procede de fabrication Granted FR2422261A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3919178A JPS54131892A (en) 1978-04-05 1978-04-05 Semiconductor pressure converter

Publications (2)

Publication Number Publication Date
FR2422261A1 true FR2422261A1 (fr) 1979-11-02
FR2422261B1 FR2422261B1 (fr) 1984-08-17

Family

ID=12546215

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7907650A Granted FR2422261A1 (fr) 1978-04-05 1979-03-27 Transducteur de pression absolue semi-conducteur et procede de fabrication

Country Status (6)

Country Link
US (1) US4295115A (fr)
JP (1) JPS54131892A (fr)
CA (1) CA1131759A (fr)
DE (1) DE2913772C3 (fr)
FR (1) FR2422261A1 (fr)
GB (1) GB2019648B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2448140A1 (fr) * 1979-02-02 1980-08-29 Nissan Motor Capteur de pression a diaphragme

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU503379B1 (en) * 1978-08-28 1979-08-30 Babcock & Wilcox Co., The Pressure transducer
JPS5817421B2 (ja) * 1979-02-02 1983-04-07 日産自動車株式会社 半導体圧力センサ
US4368575A (en) * 1980-07-14 1983-01-18 Data Instruments, Inc. Pressure transducer--method of making same
JPS5892746U (ja) * 1981-12-16 1983-06-23 株式会社山武 半導体圧力変換器
CA1186163A (fr) * 1982-01-04 1985-04-30 James B. Starr Capteur de pression a semiconducteur
US4656454A (en) * 1985-04-24 1987-04-07 Honeywell Inc. Piezoresistive pressure transducer with elastomeric seals
US4649363A (en) * 1985-07-22 1987-03-10 Honeywell Inc. Sensor
US4800758A (en) * 1986-06-23 1989-01-31 Rosemount Inc. Pressure transducer with stress isolation for hard mounting
US4721938A (en) * 1986-12-22 1988-01-26 Delco Electronics Corporation Process for forming a silicon pressure transducer
US4852408A (en) * 1987-09-03 1989-08-01 Scott Fetzer Company Stop for integrated circuit diaphragm
US4870745A (en) * 1987-12-23 1989-10-03 Siemens-Bendix Automotive Electronics L.P. Methods of making silicon-based sensors
US5264820A (en) * 1992-03-31 1993-11-23 Eaton Corporation Diaphragm mounting system for a pressure transducer
JP3300060B2 (ja) * 1992-10-22 2002-07-08 キヤノン株式会社 加速度センサー及びその製造方法
JPH06207870A (ja) * 1993-01-11 1994-07-26 Mitsubishi Electric Corp 半導体圧力センサ
US5591679A (en) * 1995-04-12 1997-01-07 Sensonor A/S Sealed cavity arrangement method
US6229427B1 (en) * 1995-07-13 2001-05-08 Kulite Semiconductor Products Inc. Covered sealed pressure transducers and method for making same
US20020003274A1 (en) * 1998-08-27 2002-01-10 Janusz Bryzek Piezoresistive sensor with epi-pocket isolation
US6006607A (en) * 1998-08-31 1999-12-28 Maxim Integrated Products, Inc. Piezoresistive pressure sensor with sculpted diaphragm
US6351996B1 (en) 1998-11-12 2002-03-05 Maxim Integrated Products, Inc. Hermetic packaging for semiconductor pressure sensors
US6346742B1 (en) 1998-11-12 2002-02-12 Maxim Integrated Products, Inc. Chip-scale packaged pressure sensor
US6255728B1 (en) 1999-01-15 2001-07-03 Maxim Integrated Products, Inc. Rigid encapsulation package for semiconductor devices
JP4265074B2 (ja) * 2000-03-28 2009-05-20 パナソニック電工株式会社 半導体圧力センサの製造方法
US6564642B1 (en) 2000-11-02 2003-05-20 Kavlico Corporation Stable differential pressure measuring system
US6809424B2 (en) * 2000-12-19 2004-10-26 Harris Corporation Method for making electronic devices including silicon and LTCC and devices produced thereby
US6581468B2 (en) 2001-03-22 2003-06-24 Kavlico Corporation Independent-excitation cross-coupled differential-pressure transducer
EP1423713A1 (fr) * 2001-08-24 2004-06-02 Honeywell International Inc. Systeme electromecanique micro-usine de silicium, a fermeture etanche, possedant des conducteurs diffuses
KR100427430B1 (ko) * 2002-01-28 2004-04-13 학교법인 동서학원 금속박막형 압력센서 및 그 제조방법
US20030167851A1 (en) * 2002-01-30 2003-09-11 Parker Gregory D. Absolute micromachined silicon pressure sensor with backside hermetic cover and method of making the same
FR2881224B1 (fr) * 2005-01-21 2007-11-23 Auxitrol Sa Sa Ensemble de detection de la pression absolue d'un fluide
US7503221B2 (en) * 2006-11-08 2009-03-17 Honeywell International Inc. Dual span absolute pressure sense die
DE102006062222A1 (de) * 2006-12-22 2008-06-26 Endress + Hauser Gmbh + Co. Kg Differenzdrucksensor mit Kompensation des statischen Drucks
JP5079643B2 (ja) * 2007-11-02 2012-11-21 株式会社デンソー 燃料噴射弁及び燃料噴射装置
JP5079650B2 (ja) * 2007-11-02 2012-11-21 株式会社デンソー 燃料噴射弁及び燃料噴射装置
JP5169951B2 (ja) * 2009-04-03 2013-03-27 株式会社デンソー 燃料噴射弁
JP5265439B2 (ja) * 2009-04-03 2013-08-14 株式会社デンソー 燃料噴射弁
JP5220674B2 (ja) * 2009-04-03 2013-06-26 株式会社デンソー 燃料噴射弁及び燃料噴射弁の内部電気接続方法
FR2987892B1 (fr) * 2012-03-06 2014-04-18 Auxitrol Sa Procede de fabrication d'un capteur de pression et capteur correspondant
US10067022B2 (en) * 2016-08-05 2018-09-04 Denso International America, Inc. Absolute pressure sensor
CN112897450B (zh) * 2021-01-19 2022-11-11 北京遥测技术研究所 一种mems绝压式压力传感器及其加工方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1138401A (en) * 1965-05-06 1969-01-01 Mallory & Co Inc P R Bonding
US3595719A (en) * 1968-11-27 1971-07-27 Mallory & Co Inc P R Method of bonding an insulator member to a passivating layer covering a surface of a semiconductor device
US3697917A (en) * 1971-08-02 1972-10-10 Gen Electric Semiconductor strain gage pressure transducer
US3918019A (en) * 1974-03-11 1975-11-04 Univ Leland Stanford Junior Miniature absolute pressure transducer assembly and method
US4040172A (en) * 1975-05-01 1977-08-09 Kulite Semiconductor Products, Inc. Method of manufacturing integral transducer assemblies employing built-in pressure limiting
US4079508A (en) * 1975-08-13 1978-03-21 The Board Of Trustees Of The Leland Stanford Junior University Miniature absolute pressure transducer assembly and method
US4023562A (en) * 1975-09-02 1977-05-17 Case Western Reserve University Miniature pressure transducer for medical use and assembly method
US4019388A (en) * 1976-03-11 1977-04-26 Bailey Meter Company Glass to metal seal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2448140A1 (fr) * 1979-02-02 1980-08-29 Nissan Motor Capteur de pression a diaphragme

Also Published As

Publication number Publication date
US4295115A (en) 1981-10-13
JPS6122874B2 (fr) 1986-06-03
CA1131759A (fr) 1982-09-14
GB2019648A (en) 1979-10-31
FR2422261B1 (fr) 1984-08-17
DE2913772C3 (de) 1982-03-25
GB2019648B (en) 1982-08-04
JPS54131892A (en) 1979-10-13
DE2913772A1 (de) 1979-10-18
DE2913772B2 (de) 1981-06-25

Similar Documents

Publication Publication Date Title
FR2422261A1 (fr) Transducteur de pression absolue semi-conducteur et procede de fabrication
KR900700862A (ko) 실리콘 베이스 질량 기류 센서 및 그 조립방법
GB1043891A (en) A semi-conductor device
GB1335415A (en) Disc-shaped semiconductor device and method for manufacturing same
US3230763A (en) Semiconductor pressure diaphragm
JPH0585857B2 (fr)
NL7506052A (nl) Elektrode-constructie.
JPS6221031A (ja) 圧力センサユニツト
JPS57115873A (en) Semiconductor diaphragm type pressure sensor
JPS56165361A (en) Semiconductor pressure converter
JPS56148870A (en) Semiconductor presssure converter
GB1278210A (en) Improvements relating to semiconductir strain transducers
JPS5543415A (en) Semiconductor pressure converter
JPS56142432A (en) Electrostatic capacitance type pressure sensor
JPS57109350A (en) Semiconductor device
JPS5646583A (en) Semiconductor device and manufacture thereof
JPS6463832A (en) Semiconductor pressure transducer and manufacture thereof
JPS57114263A (en) Semiconductor device
JPS5710251A (en) Semiconductor device
GB1255749A (en) Semiconductor devices
SU1294078A1 (ru) Способ изготовления преобразователя давления
JPS5696875A (en) Semiconductor pressure sensing device and manufacture thereof
JPS55120172A (en) Semiconductor pressure transducer
JPS57114248A (en) Semiconductor device
JPS5756977A (en) Semiconductor pressure detector

Legal Events

Date Code Title Description
ST Notification of lapse