JPS54131892A - Semiconductor pressure converter - Google Patents
Semiconductor pressure converterInfo
- Publication number
- JPS54131892A JPS54131892A JP3919178A JP3919178A JPS54131892A JP S54131892 A JPS54131892 A JP S54131892A JP 3919178 A JP3919178 A JP 3919178A JP 3919178 A JP3919178 A JP 3919178A JP S54131892 A JPS54131892 A JP S54131892A
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- thin film
- electrode
- anode
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000010168 coupling process Methods 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000010409 thin film Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0069—Electrical connection means from the sensor to its support
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/145—Housings with stress relieving means
- G01L19/146—Housings with stress relieving means using flexible element between the transducer and the support
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49103—Strain gauge making
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Child & Adolescent Psychology (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3919178A JPS54131892A (en) | 1978-04-05 | 1978-04-05 | Semiconductor pressure converter |
FR7907650A FR2422261A1 (fr) | 1978-04-05 | 1979-03-27 | Transducteur de pression absolue semi-conducteur et procede de fabrication |
GB7911549A GB2019648B (en) | 1978-04-05 | 1979-04-03 | Semiconductor pressure transducer and method of assembly thereof |
CA324,878A CA1131759A (en) | 1978-04-05 | 1979-04-04 | Semiconductor absolute pressure transducer assembly and method |
US06/027,157 US4295115A (en) | 1978-04-05 | 1979-04-04 | Semiconductor absolute pressure transducer assembly and method |
DE2913772A DE2913772C3 (de) | 1978-04-05 | 1979-04-05 | Halbleiter-Druckwandler |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3919178A JPS54131892A (en) | 1978-04-05 | 1978-04-05 | Semiconductor pressure converter |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54131892A true JPS54131892A (en) | 1979-10-13 |
JPS6122874B2 JPS6122874B2 (ja) | 1986-06-03 |
Family
ID=12546215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3919178A Granted JPS54131892A (en) | 1978-04-05 | 1978-04-05 | Semiconductor pressure converter |
Country Status (6)
Country | Link |
---|---|
US (1) | US4295115A (ja) |
JP (1) | JPS54131892A (ja) |
CA (1) | CA1131759A (ja) |
DE (1) | DE2913772C3 (ja) |
FR (1) | FR2422261A1 (ja) |
GB (1) | GB2019648B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5892746U (ja) * | 1981-12-16 | 1983-06-23 | 株式会社山武 | 半導体圧力変換器 |
JP2001284603A (ja) * | 2000-03-28 | 2001-10-12 | Matsushita Electric Works Ltd | 半導体圧力センサの製造方法 |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU503379B1 (en) * | 1978-08-28 | 1979-08-30 | Babcock & Wilcox Co., The | Pressure transducer |
JPS55112864U (ja) * | 1979-02-02 | 1980-08-08 | ||
JPS5817421B2 (ja) * | 1979-02-02 | 1983-04-07 | 日産自動車株式会社 | 半導体圧力センサ |
US4368575A (en) * | 1980-07-14 | 1983-01-18 | Data Instruments, Inc. | Pressure transducer--method of making same |
CA1186163A (en) * | 1982-01-04 | 1985-04-30 | James B. Starr | Semiconductor pressure transducer |
US4656454A (en) * | 1985-04-24 | 1987-04-07 | Honeywell Inc. | Piezoresistive pressure transducer with elastomeric seals |
US4649363A (en) * | 1985-07-22 | 1987-03-10 | Honeywell Inc. | Sensor |
US4800758A (en) * | 1986-06-23 | 1989-01-31 | Rosemount Inc. | Pressure transducer with stress isolation for hard mounting |
US4721938A (en) * | 1986-12-22 | 1988-01-26 | Delco Electronics Corporation | Process for forming a silicon pressure transducer |
US4852408A (en) * | 1987-09-03 | 1989-08-01 | Scott Fetzer Company | Stop for integrated circuit diaphragm |
US4870745A (en) * | 1987-12-23 | 1989-10-03 | Siemens-Bendix Automotive Electronics L.P. | Methods of making silicon-based sensors |
US5264820A (en) * | 1992-03-31 | 1993-11-23 | Eaton Corporation | Diaphragm mounting system for a pressure transducer |
JP3300060B2 (ja) * | 1992-10-22 | 2002-07-08 | キヤノン株式会社 | 加速度センサー及びその製造方法 |
JPH06207870A (ja) * | 1993-01-11 | 1994-07-26 | Mitsubishi Electric Corp | 半導体圧力センサ |
US5591679A (en) * | 1995-04-12 | 1997-01-07 | Sensonor A/S | Sealed cavity arrangement method |
US6229427B1 (en) * | 1995-07-13 | 2001-05-08 | Kulite Semiconductor Products Inc. | Covered sealed pressure transducers and method for making same |
US20020003274A1 (en) * | 1998-08-27 | 2002-01-10 | Janusz Bryzek | Piezoresistive sensor with epi-pocket isolation |
US6006607A (en) * | 1998-08-31 | 1999-12-28 | Maxim Integrated Products, Inc. | Piezoresistive pressure sensor with sculpted diaphragm |
US6346742B1 (en) | 1998-11-12 | 2002-02-12 | Maxim Integrated Products, Inc. | Chip-scale packaged pressure sensor |
US6351996B1 (en) | 1998-11-12 | 2002-03-05 | Maxim Integrated Products, Inc. | Hermetic packaging for semiconductor pressure sensors |
US6255728B1 (en) | 1999-01-15 | 2001-07-03 | Maxim Integrated Products, Inc. | Rigid encapsulation package for semiconductor devices |
US6564642B1 (en) | 2000-11-02 | 2003-05-20 | Kavlico Corporation | Stable differential pressure measuring system |
US6809424B2 (en) * | 2000-12-19 | 2004-10-26 | Harris Corporation | Method for making electronic devices including silicon and LTCC and devices produced thereby |
US6581468B2 (en) | 2001-03-22 | 2003-06-24 | Kavlico Corporation | Independent-excitation cross-coupled differential-pressure transducer |
EP1423713A1 (en) * | 2001-08-24 | 2004-06-02 | Honeywell International Inc. | Hermetically sealed silicon micro-machined electromechanical system (mems) device having diffused conductors |
KR100427430B1 (ko) * | 2002-01-28 | 2004-04-13 | 학교법인 동서학원 | 금속박막형 압력센서 및 그 제조방법 |
EP1470405A1 (en) * | 2002-01-30 | 2004-10-27 | Honeywell International Inc. | An absolute micromachined silicon pressure sensor with backside hermetic cover and method of making the same |
FR2881224B1 (fr) * | 2005-01-21 | 2007-11-23 | Auxitrol Sa Sa | Ensemble de detection de la pression absolue d'un fluide |
US7503221B2 (en) * | 2006-11-08 | 2009-03-17 | Honeywell International Inc. | Dual span absolute pressure sense die |
DE102006062222A1 (de) * | 2006-12-22 | 2008-06-26 | Endress + Hauser Gmbh + Co. Kg | Differenzdrucksensor mit Kompensation des statischen Drucks |
JP5079643B2 (ja) * | 2007-11-02 | 2012-11-21 | 株式会社デンソー | 燃料噴射弁及び燃料噴射装置 |
JP5079650B2 (ja) * | 2007-11-02 | 2012-11-21 | 株式会社デンソー | 燃料噴射弁及び燃料噴射装置 |
JP5169951B2 (ja) * | 2009-04-03 | 2013-03-27 | 株式会社デンソー | 燃料噴射弁 |
JP5265439B2 (ja) * | 2009-04-03 | 2013-08-14 | 株式会社デンソー | 燃料噴射弁 |
JP5220674B2 (ja) * | 2009-04-03 | 2013-06-26 | 株式会社デンソー | 燃料噴射弁及び燃料噴射弁の内部電気接続方法 |
FR2987892B1 (fr) * | 2012-03-06 | 2014-04-18 | Auxitrol Sa | Procede de fabrication d'un capteur de pression et capteur correspondant |
US10067022B2 (en) * | 2016-08-05 | 2018-09-04 | Denso International America, Inc. | Absolute pressure sensor |
CN112897450B (zh) * | 2021-01-19 | 2022-11-11 | 北京遥测技术研究所 | 一种mems绝压式压力传感器及其加工方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1138401A (en) * | 1965-05-06 | 1969-01-01 | Mallory & Co Inc P R | Bonding |
US3595719A (en) * | 1968-11-27 | 1971-07-27 | Mallory & Co Inc P R | Method of bonding an insulator member to a passivating layer covering a surface of a semiconductor device |
US3697917A (en) * | 1971-08-02 | 1972-10-10 | Gen Electric | Semiconductor strain gage pressure transducer |
US3918019A (en) * | 1974-03-11 | 1975-11-04 | Univ Leland Stanford Junior | Miniature absolute pressure transducer assembly and method |
US4040172A (en) * | 1975-05-01 | 1977-08-09 | Kulite Semiconductor Products, Inc. | Method of manufacturing integral transducer assemblies employing built-in pressure limiting |
US4079508A (en) * | 1975-08-13 | 1978-03-21 | The Board Of Trustees Of The Leland Stanford Junior University | Miniature absolute pressure transducer assembly and method |
US4023562A (en) * | 1975-09-02 | 1977-05-17 | Case Western Reserve University | Miniature pressure transducer for medical use and assembly method |
US4019388A (en) * | 1976-03-11 | 1977-04-26 | Bailey Meter Company | Glass to metal seal |
-
1978
- 1978-04-05 JP JP3919178A patent/JPS54131892A/ja active Granted
-
1979
- 1979-03-27 FR FR7907650A patent/FR2422261A1/fr active Granted
- 1979-04-03 GB GB7911549A patent/GB2019648B/en not_active Expired
- 1979-04-04 CA CA324,878A patent/CA1131759A/en not_active Expired
- 1979-04-04 US US06/027,157 patent/US4295115A/en not_active Expired - Lifetime
- 1979-04-05 DE DE2913772A patent/DE2913772C3/de not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5892746U (ja) * | 1981-12-16 | 1983-06-23 | 株式会社山武 | 半導体圧力変換器 |
JPS6246277Y2 (ja) * | 1981-12-16 | 1987-12-12 | ||
JP2001284603A (ja) * | 2000-03-28 | 2001-10-12 | Matsushita Electric Works Ltd | 半導体圧力センサの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CA1131759A (en) | 1982-09-14 |
GB2019648A (en) | 1979-10-31 |
DE2913772A1 (de) | 1979-10-18 |
GB2019648B (en) | 1982-08-04 |
FR2422261B1 (ja) | 1984-08-17 |
DE2913772B2 (de) | 1981-06-25 |
FR2422261A1 (fr) | 1979-11-02 |
DE2913772C3 (de) | 1982-03-25 |
JPS6122874B2 (ja) | 1986-06-03 |
US4295115A (en) | 1981-10-13 |
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