JPS6122874B2 - - Google Patents

Info

Publication number
JPS6122874B2
JPS6122874B2 JP53039191A JP3919178A JPS6122874B2 JP S6122874 B2 JPS6122874 B2 JP S6122874B2 JP 53039191 A JP53039191 A JP 53039191A JP 3919178 A JP3919178 A JP 3919178A JP S6122874 B2 JPS6122874 B2 JP S6122874B2
Authority
JP
Japan
Prior art keywords
cover member
diaphragm
silicon
pressure
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53039191A
Other languages
English (en)
Other versions
JPS54131892A (en
Inventor
Minoru Takahashi
Takahiko Tanigami
Kaoru Uchama
Hitoshi Minorikawa
Motohisa Nishihara
Komei Yatsuno
Hiroji Kawakami
Kyomitsu Suzuki
Yutaka Misawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3919178A priority Critical patent/JPS54131892A/ja
Priority to FR7907650A priority patent/FR2422261A1/fr
Priority to GB7911549A priority patent/GB2019648B/en
Priority to US06/027,157 priority patent/US4295115A/en
Priority to CA324,878A priority patent/CA1131759A/en
Priority to DE2913772A priority patent/DE2913772C3/de
Publication of JPS54131892A publication Critical patent/JPS54131892A/ja
Publication of JPS6122874B2 publication Critical patent/JPS6122874B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G01L19/0069—Electrical connection means from the sensor to its support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/145—Housings with stress relieving means
    • G01L19/146—Housings with stress relieving means using flexible element between the transducer and the support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Child & Adolescent Psychology (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Description

【発明の詳細な説明】 本発明は半導体圧力変換器の製造方法に係り、
特に耐環境性に優れた絶対圧形の半導体圧力変換
器の製造方法に関する。
自動車エンジン用センサとして圧力変換器を用
いる場合の例としては、大気圧と吸気管の圧力差
を電気信号に変換しその入力で電子燃料噴射装置
の燃料噴射量を制御したり、電子進角装置の進角
を制御してエンジンの燃焼状態を最適に維持する
方法などその用途は多種多様である。ところで、
従来の半導体圧力変換器はゲージ抵抗部すなわち
ｐ−ｎ接合部が測定雰囲気中たとえば高温高湿の
大気、ガソリン雰囲気、排気ガス等にさらされる
ため、ゲージ抵抗特性の劣化、ｐ−ｎ接合部の電
気絶縁特性の劣化等を起こしやすい。この対策と
して、米国特許第3595719号明細書に記載される
陽極式結合法により、不純物拡散側シリコンダイ
ヤフラム上のパツシベーシヨン用二酸化珪素と有
底穴を有するシリコンと熱膨張係数の類似した硼
珪酸塩ガラスよりなるカバー部材を接着し、ゲー
ジ抵抗部を真空中または不活性ガス雰囲気中とす
る方法がある。しかし、この方法ではダイヤフラ
ム基板をｎ形、不純物拡散側をｐ形に形成してシ
リコンダイヤフラム側を陽極、硼珪酸塩ガラスよ
りなるカバー部材側を陰極とし、加熱しながら高
電圧を印加して陽極結合を行なうのでダイヤフラ
ム上のｐ−ｎ接合部に高電圧がかかるため接合特
性が悪くなり電気絶縁特性が劣化する欠点があつ
た。
本発明の目的は、耐環境性および電気絶縁特性
の優れた半導体圧力変換器の製造方法を提供する
にある。
本発明は、不純物拡散側シリコンダイヤフラム
上に、パツシベーシヨン膜、導電性の薄膜を順次
形成し、この薄膜とカバー部材に高電圧を印加し
て陽極結合を行なうようにしたものである。
本発明の一実施例を第１図の平面図、および第
２図の一部断面図にしたがつて説明する。シリコ
ンダイヤフラム１は厚肉の固定部と薄肉の受圧部
より構成され、その導電形はｎ形である。その片
側に導電形ｐ形の不純物を拡散してゲージ抵抗２
を形成し、その一端にAlまたはTi−pt−Au等の
耐食性のある電極３を蒸着またはスパツタリング
により形成する。一方、シリコンダイヤフラム１
上に二酸化珪素薄層より成るパツシベーシヨン膜
４を形成する。この膜４は、後述のカバー部材を
陽極結合によりダイヤフラム１に接着する時の高
電圧によるｐ−ｎ接合への影響を除くために用い
られている。パツシベーシヨン膜４の上に、電極
部を除くようにシリコンまたはAl，Ti，Pt，
Pd，Be等の導電度の十分高い金属薄膜５をスパ
ツタリング、気相成長法、または蒸着により形成
する。この金属薄膜５は、上述の絶縁性のパツシ
ベーシヨン膜４に絶縁性のカバー部材を陽極結合
法により接合するための中間部材として用いられ
る。なぜならば、陽極結合法は、絶縁物と導体の
接合のみ適用可能だからである。この場合、シリ
コンを形成した場合パツシベーシヨン用二酸化珪
素薄層を両側からシリコンが対称に挾む形となり
熱膨張係数の相異によるシリコンダイヤフラム１
の初期たわみを軽減できるので基準点の温度特性
を向上でき、また二酸化珪素への密着性も良いた
めシリコンが最も適している。この金属薄膜５を
陽極に接続し、密閉室６を作るためのカバー部材
７すなわち一部に有底穴と電極取出用の貫通孔８
を有し、かつ結合性および温度特性向上のためダ
イヤフラムの材質すなわちシリコンと熱膨張係数
が類似した硼珪酸塩ガラスを陰極に接続し、高温
雰囲気中で高電圧を加えて真空中または不活性ガ
ス中で陽極結合を行なう。一方、電極３の材料は
たとえばAlまたは耐食性を有するTi−Pt−Au等
とし、貫通孔８にキヤピラリを挿入して直接、電
極３に金線９等を超音波ボールボンデイングす
る。
さらに、耐食性の向上やマイグレーシヨンを防
止するため、貫通孔および電極部にたとえばシリ
コンゲルまたはRTV等の樹脂１０をコーテイン
グすると良い。
一方、シリコンダイヤフラム１の抵抗拡散側と
反対の固定部に、前記カバー部材７と同様の材質
からなるパイプ１１を陽極結合法により接着し圧
力導入部を形成する。
また金線９の他端は第３図の圧力変換器の断面
図に示すように、副基板１２の電極にワイヤボン
デイングし、リードフレーム１３を通してオペア
ンプ１４を有する回路側の主基板１５に電気的に
接続する。
一方、副基板１２にチユーブ１６を樹脂接着し
パイプ１１を保持している。かつ副基板１２に主
基板１５を樹脂接着し固定し、この主基板１５に
端子１７を電気的に接続し、最終電気信号を取出
す。
本構成によれば、真空すなわち絶対圧を基準と
する、圧力導入管内の被測定圧力との圧力差をピ
エゾ効果により電気信号に変換でき、その出力を
たとえばマイクロコンピユータに入力して電子燃
料噴射装置の噴射量を制御したり、電子進角装置
の進角を制御して、最適なエンジン状態を維持
し、排気ガスの浄化、および燃費向上に寄与し得
る。
本発明の一実施例によれば、ゲージ抵抗の雰囲
気が真空または不活性のため、ゲージ抵抗特性お
よびｐ−ｎ接合部の電気絶縁特性は劣化しない。
また、陽極結合時もｐ−ｎ接合部に逆電圧が印
加されないため、接合部の電気絶縁特性は良好で
ある。また、シリコンダイヤフラム上の二酸化珪
素上にシリコンを形成することにより、熱膨張係
数の相異からひずみによる温度変化に対する基準
点の変動を緩和できる。
本発明の一実施例では、チツプ状での陽極結合
による構造を例としたが、ウエーハ状で陽極結合
を行なつてからペレタイズしても本発明を適用で
き量産性をさらに向上できることはあきらかであ
る。
本発明によれば、耐環境性および電気絶縁特性
の優れた半導体圧力変換器の製造方法を提供し得
る効果がある。
【図面の簡単な説明】
第１図は本発明の一実施例を示す受圧部付近の
平面図、第２図は一部断面図、第３図は圧力変換
器の断面図である。 １……シリコンダイヤフラム、４……パツシベ
ーシヨン膜、５……金属薄膜、６……真空室、７
……カバー部材。

Claims (1)

    【特許請求の範囲】
  1. １ (a)半導体ダイヤフラム上にピエゾ抵抗を形成
    するステツプと、(b)少くともこのピエゾ抵抗上に
    絶縁性のパツシベイシヨン膜を形成するステツプ
    と、(c)このパツシベイシヨン膜上に導電性の高い
    材料より成る薄層を形成するステツプと、(d)この
    薄層上に前記ダイヤフラムを熱膨張係数が類似す
    る材質の絶縁体からなるカバー部材を載せ、この
    カバー部材と前記薄層間に高電圧を印加し、陽極
    結合法により接着し、上記半導体ダイヤフラムと
    上記カバー部材の間に密閉空間を形成したことを
    特徴とする半導体圧力変換器の製造方法。
JP3919178A 1978-04-05 1978-04-05 Semiconductor pressure converter Granted JPS54131892A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP3919178A JPS54131892A (en) 1978-04-05 1978-04-05 Semiconductor pressure converter
FR7907650A FR2422261A1 (fr) 1978-04-05 1979-03-27 Transducteur de pression absolue semi-conducteur et procede de fabrication
GB7911549A GB2019648B (en) 1978-04-05 1979-04-03 Semiconductor pressure transducer and method of assembly thereof
US06/027,157 US4295115A (en) 1978-04-05 1979-04-04 Semiconductor absolute pressure transducer assembly and method
CA324,878A CA1131759A (en) 1978-04-05 1979-04-04 Semiconductor absolute pressure transducer assembly and method
DE2913772A DE2913772C3 (de) 1978-04-05 1979-04-05 Halbleiter-Druckwandler

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3919178A JPS54131892A (en) 1978-04-05 1978-04-05 Semiconductor pressure converter

Publications (2)

Publication Number Publication Date
JPS54131892A JPS54131892A (en) 1979-10-13
JPS6122874B2 true JPS6122874B2 (ja) 1986-06-03

Family

ID=12546215

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3919178A Granted JPS54131892A (en) 1978-04-05 1978-04-05 Semiconductor pressure converter

Country Status (6)

Country Link
US (1) US4295115A (ja)
JP (1) JPS54131892A (ja)
CA (1) CA1131759A (ja)
DE (1) DE2913772C3 (ja)
FR (1) FR2422261A1 (ja)
GB (1) GB2019648B (ja)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU503379B1 (en) * 1978-08-28 1979-08-30 Babcock & Wilcox Co., The Pressure transducer
JPS5817421B2 (ja) * 1979-02-02 1983-04-07 日産自動車株式会社 半導体圧力センサ
JPS55112864U (ja) * 1979-02-02 1980-08-08
US4368575A (en) * 1980-07-14 1983-01-18 Data Instruments, Inc. Pressure transducer--method of making same
JPS5892746U (ja) * 1981-12-16 1983-06-23 株式会社山武 半導体圧力変換器
CA1186163A (en) * 1982-01-04 1985-04-30 James B. Starr Semiconductor pressure transducer
US4656454A (en) * 1985-04-24 1987-04-07 Honeywell Inc. Piezoresistive pressure transducer with elastomeric seals
US4649363A (en) * 1985-07-22 1987-03-10 Honeywell Inc. Sensor
US4800758A (en) * 1986-06-23 1989-01-31 Rosemount Inc. Pressure transducer with stress isolation for hard mounting
US4721938A (en) * 1986-12-22 1988-01-26 Delco Electronics Corporation Process for forming a silicon pressure transducer
US4852408A (en) * 1987-09-03 1989-08-01 Scott Fetzer Company Stop for integrated circuit diaphragm
US4870745A (en) * 1987-12-23 1989-10-03 Siemens-Bendix Automotive Electronics L.P. Methods of making silicon-based sensors
US5264820A (en) * 1992-03-31 1993-11-23 Eaton Corporation Diaphragm mounting system for a pressure transducer
JP3300060B2 (ja) * 1992-10-22 2002-07-08 キヤノン株式会社 加速度センサー及びその製造方法
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Publication number Publication date
FR2422261A1 (fr) 1979-11-02
DE2913772B2 (de) 1981-06-25
GB2019648B (en) 1982-08-04
JPS54131892A (en) 1979-10-13
GB2019648A (en) 1979-10-31
CA1131759A (en) 1982-09-14
US4295115A (en) 1981-10-13
FR2422261B1 (ja) 1984-08-17
DE2913772C3 (de) 1982-03-25
DE2913772A1 (de) 1979-10-18

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