FR2413124A1 - Procede de preparation de monocristaux de silicium tres purs - Google Patents
Procede de preparation de monocristaux de silicium tres pursInfo
- Publication number
- FR2413124A1 FR2413124A1 FR7836883A FR7836883A FR2413124A1 FR 2413124 A1 FR2413124 A1 FR 2413124A1 FR 7836883 A FR7836883 A FR 7836883A FR 7836883 A FR7836883 A FR 7836883A FR 2413124 A1 FR2413124 A1 FR 2413124A1
- Authority
- FR
- France
- Prior art keywords
- single crystals
- silicon single
- preparing
- pure silicon
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
L'INVENTION CONCERNE UN PROCEDE DE FABRICATION DE MONOCRISTAUX DE SILICIUM TRES PURS, CONTENANT UNE TRES FAIBLE PROPORTION D'OXYGENE, D'APRES LE PROCEDE DE CZOCHRALZKI. LE PROCEDE SELON L'INVENTION EST CARACTERISE EN CE QUE, APRES AVOIR MIS LE GERME CRISTALLIN EN CONTACT AVEC LA MASSE FONDUE, ON TIRE LE BARREAU DE SILICIUM A PARTIR DE CETTE MASSE FONDUE TOUT EN LE FAISANT TOURNER A RAISON DE 3 A 6TRMN. CES MONOCRISTAUX DE SILICIUM SONT DESTINES A LA FABRICATION DE COMPOSANTS SEMI-CONDUCTEURS DE CARACTERISTIQUES AUSSI CONSTANTES QUE POSSIBLE.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2758888A DE2758888C2 (de) | 1977-12-30 | 1977-12-30 | Verfahren zur Herstellung reinster Siliciumeinkristalle |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2413124A1 true FR2413124A1 (fr) | 1979-07-27 |
FR2413124B1 FR2413124B1 (fr) | 1983-12-30 |
Family
ID=6027734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7836883A Granted FR2413124A1 (fr) | 1977-12-30 | 1978-12-29 | Procede de preparation de monocristaux de silicium tres purs |
Country Status (8)
Country | Link |
---|---|
US (1) | US4239585A (fr) |
JP (1) | JPS5494478A (fr) |
DE (1) | DE2758888C2 (fr) |
DK (1) | DK586678A (fr) |
FR (1) | FR2413124A1 (fr) |
GB (1) | GB2014871B (fr) |
IT (1) | IT1109399B (fr) |
NL (1) | NL7812363A (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0042901A1 (fr) * | 1980-06-26 | 1982-01-06 | International Business Machines Corporation | Procédé pour contrôler la teneur en oxygène des barreaux de silicium tirés selon la méthode de Czochralski |
EP0055619A1 (fr) * | 1980-12-29 | 1982-07-07 | Monsanto Company | Méthode pour régler la concentration et distribution en oxygène dans du silicium tiré selon la méthode Czochralski |
EP0429847A1 (fr) * | 1989-10-23 | 1991-06-05 | Shin-Etsu Handotai Company Limited | Procédé pour le tirage de silicium monocristallin |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4511428A (en) * | 1982-07-09 | 1985-04-16 | International Business Machines Corporation | Method of controlling oxygen content and distribution in grown silicon crystals |
DE3333960A1 (de) * | 1983-09-20 | 1985-04-04 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur herstellung von versetzungsfreien einkristallstaeben aus silicium |
JPS6262520U (fr) * | 1985-10-11 | 1987-04-18 | ||
US4659423A (en) * | 1986-04-28 | 1987-04-21 | International Business Machines Corporation | Semiconductor crystal growth via variable melt rotation |
US5215620A (en) * | 1989-09-19 | 1993-06-01 | Shin-Etsu Handotai Co. Ltd. | Method for pulling a silicon single crystal by imposing a periodic rotation rate on a constant rotation rate |
JPH0777999B2 (ja) * | 1989-11-24 | 1995-08-23 | 信越半導体株式会社 | アンチモンドープ単結晶シリコンの育成方法 |
JP3341378B2 (ja) * | 1993-08-25 | 2002-11-05 | 富士通株式会社 | シリコン結晶中の水素濃度測定方法及びシリコン結晶の製造方法 |
US5593498A (en) * | 1995-06-09 | 1997-01-14 | Memc Electronic Materials, Inc. | Apparatus for rotating a crucible of a crystal pulling machine |
US5911825A (en) * | 1997-09-30 | 1999-06-15 | Seh America, Inc. | Low oxygen heater |
EP1560951B1 (fr) * | 2002-11-12 | 2010-10-27 | MEMC Electronic Materials, Inc. | Procede de preparation de silicium monocristallin au moyen de la rotation d'un creuset pour reguler le gradient de temperature |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB838848A (en) * | 1955-11-30 | 1960-06-22 | Rauland Corp | Improvements in or relating to methods of manufacturing crystalline material |
DE1519922A1 (de) * | 1966-06-10 | 1970-03-12 | Halbleiterwerk Frankfurt Oder | Verfahren und Vorrichtung zum Ziehen von Kristallen aus einem Schmelztiegel |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB797377A (en) | 1955-10-18 | 1958-07-02 | Gen Electric Co Ltd | Improvements in or relating to the production of semi-conductor bodies |
US3275417A (en) * | 1963-10-15 | 1966-09-27 | Texas Instruments Inc | Production of dislocation-free silicon single crystals |
DE1644020A1 (de) * | 1967-10-04 | 1971-03-25 | Siemens Ag | Verfahren zum Herstellen von tiegelgezogenen Einkristallstaeben mit homogener Dotierung |
US3929557A (en) * | 1973-06-11 | 1975-12-30 | Us Air Force | Periodically and alternately accelerating and decelerating rotation rate of a feed crystal |
DE2438852C3 (de) * | 1974-08-13 | 1980-02-07 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von homogen-dotierten Halbleitereinkristallstäben |
US4010064A (en) | 1975-05-27 | 1977-03-01 | International Business Machines Corporation | Controlling the oxygen content of Czochralski process of silicon crystals by sandblasting silica vessel |
US4040895A (en) * | 1975-10-22 | 1977-08-09 | International Business Machines Corporation | Control of oxygen in silicon crystals |
-
1977
- 1977-12-30 DE DE2758888A patent/DE2758888C2/de not_active Expired
-
1978
- 1978-10-18 JP JP12744578A patent/JPS5494478A/ja active Granted
- 1978-10-25 US US05/954,518 patent/US4239585A/en not_active Expired - Lifetime
- 1978-12-20 NL NL7812363A patent/NL7812363A/xx not_active Application Discontinuation
- 1978-12-28 IT IT52468/78A patent/IT1109399B/it active
- 1978-12-29 DK DK586678A patent/DK586678A/da not_active Application Discontinuation
- 1978-12-29 FR FR7836883A patent/FR2413124A1/fr active Granted
- 1978-12-29 GB GB7850357A patent/GB2014871B/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB838848A (en) * | 1955-11-30 | 1960-06-22 | Rauland Corp | Improvements in or relating to methods of manufacturing crystalline material |
DE1519922A1 (de) * | 1966-06-10 | 1970-03-12 | Halbleiterwerk Frankfurt Oder | Verfahren und Vorrichtung zum Ziehen von Kristallen aus einem Schmelztiegel |
Non-Patent Citations (2)
Title |
---|
EXBK/73 * |
EXBK/75 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0042901A1 (fr) * | 1980-06-26 | 1982-01-06 | International Business Machines Corporation | Procédé pour contrôler la teneur en oxygène des barreaux de silicium tirés selon la méthode de Czochralski |
EP0055619A1 (fr) * | 1980-12-29 | 1982-07-07 | Monsanto Company | Méthode pour régler la concentration et distribution en oxygène dans du silicium tiré selon la méthode Czochralski |
EP0429847A1 (fr) * | 1989-10-23 | 1991-06-05 | Shin-Etsu Handotai Company Limited | Procédé pour le tirage de silicium monocristallin |
Also Published As
Publication number | Publication date |
---|---|
DK586678A (da) | 1979-07-01 |
NL7812363A (nl) | 1979-07-03 |
DE2758888A1 (de) | 1979-07-05 |
DE2758888C2 (de) | 1983-09-22 |
JPS5727077B2 (fr) | 1982-06-08 |
IT1109399B (it) | 1985-12-16 |
JPS5494478A (en) | 1979-07-26 |
IT7852468A0 (it) | 1978-12-28 |
FR2413124B1 (fr) | 1983-12-30 |
US4239585A (en) | 1980-12-16 |
GB2014871B (en) | 1982-04-21 |
GB2014871A (en) | 1979-09-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |