JPS534466A - Doping method of group ii # elements into boron phosphide semiconductor - Google Patents

Doping method of group ii # elements into boron phosphide semiconductor

Info

Publication number
JPS534466A
JPS534466A JP7872676A JP7872676A JPS534466A JP S534466 A JPS534466 A JP S534466A JP 7872676 A JP7872676 A JP 7872676A JP 7872676 A JP7872676 A JP 7872676A JP S534466 A JPS534466 A JP S534466A
Authority
JP
Japan
Prior art keywords
group
elements
doping method
boron phosphide
phosphide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7872676A
Other languages
Japanese (ja)
Inventor
Katsuto Nagano
Shozo Sasa
Takeshi Nakada
Yukio Asakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP7872676A priority Critical patent/JPS534466A/en
Priority to DE19772729889 priority patent/DE2729889C3/en
Publication of JPS534466A publication Critical patent/JPS534466A/en
Priority to US05/971,440 priority patent/US4214926A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To dope a group II b acceptor impurity by adding a slight amount of the organic compound of a group II b element to reaction gas at the time of vapor growth of BP.
COPYRIGHT: (C)1978,JPO&Japio
JP7872676A 1976-07-02 1976-07-02 Doping method of group ii # elements into boron phosphide semiconductor Pending JPS534466A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP7872676A JPS534466A (en) 1976-07-02 1976-07-02 Doping method of group ii # elements into boron phosphide semiconductor
DE19772729889 DE2729889C3 (en) 1976-07-02 1977-07-01 Process for the epitaxial growth of doped boron phosphide on a substrate
US05/971,440 US4214926A (en) 1976-07-02 1978-12-20 Method of doping IIb or VIb group elements into a boron phosphide semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7872676A JPS534466A (en) 1976-07-02 1976-07-02 Doping method of group ii # elements into boron phosphide semiconductor

Publications (1)

Publication Number Publication Date
JPS534466A true JPS534466A (en) 1978-01-17

Family

ID=13669876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7872676A Pending JPS534466A (en) 1976-07-02 1976-07-02 Doping method of group ii # elements into boron phosphide semiconductor

Country Status (1)

Country Link
JP (1) JPS534466A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115842U (en) * 1984-01-14 1985-08-05 有限会社　ワド− Packaging carrier bag
US7018728B2 (en) 2001-12-14 2006-03-28 Showa Denko K.K. Boron phosphide-based semiconductor device and production method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210624A (en) * 1961-04-24 1965-10-05 Monsanto Co Article having a silicon carbide substrate with an epitaxial layer of boron phosphide

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210624A (en) * 1961-04-24 1965-10-05 Monsanto Co Article having a silicon carbide substrate with an epitaxial layer of boron phosphide

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115842U (en) * 1984-01-14 1985-08-05 有限会社　ワド− Packaging carrier bag
US7018728B2 (en) 2001-12-14 2006-03-28 Showa Denko K.K. Boron phosphide-based semiconductor device and production method thereof

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