JPS534466A - Doping method of group ii # elements into boron phosphide semiconductor - Google Patents
Doping method of group ii # elements into boron phosphide semiconductorInfo
- Publication number
- JPS534466A JPS534466A JP7872676A JP7872676A JPS534466A JP S534466 A JPS534466 A JP S534466A JP 7872676 A JP7872676 A JP 7872676A JP 7872676 A JP7872676 A JP 7872676A JP S534466 A JPS534466 A JP S534466A
- Authority
- JP
- Japan
- Prior art keywords
- group
- elements
- doping method
- boron phosphide
- phosphide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To dope a group II b acceptor impurity by adding a slight amount of the organic compound of a group II b element to reaction gas at the time of vapor growth of BP.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7872676A JPS534466A (en) | 1976-07-02 | 1976-07-02 | Doping method of group ii # elements into boron phosphide semiconductor |
DE19772729889 DE2729889C3 (en) | 1976-07-02 | 1977-07-01 | Process for the epitaxial growth of doped boron phosphide on a substrate |
US05/971,440 US4214926A (en) | 1976-07-02 | 1978-12-20 | Method of doping IIb or VIb group elements into a boron phosphide semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7872676A JPS534466A (en) | 1976-07-02 | 1976-07-02 | Doping method of group ii # elements into boron phosphide semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS534466A true JPS534466A (en) | 1978-01-17 |
Family
ID=13669876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7872676A Pending JPS534466A (en) | 1976-07-02 | 1976-07-02 | Doping method of group ii # elements into boron phosphide semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS534466A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60115842U (en) * | 1984-01-14 | 1985-08-05 | 有限会社 ワド− | Packaging carrier bag |
US7018728B2 (en) | 2001-12-14 | 2006-03-28 | Showa Denko K.K. | Boron phosphide-based semiconductor device and production method thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3210624A (en) * | 1961-04-24 | 1965-10-05 | Monsanto Co | Article having a silicon carbide substrate with an epitaxial layer of boron phosphide |
-
1976
- 1976-07-02 JP JP7872676A patent/JPS534466A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3210624A (en) * | 1961-04-24 | 1965-10-05 | Monsanto Co | Article having a silicon carbide substrate with an epitaxial layer of boron phosphide |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60115842U (en) * | 1984-01-14 | 1985-08-05 | 有限会社 ワド− | Packaging carrier bag |
US7018728B2 (en) | 2001-12-14 | 2006-03-28 | Showa Denko K.K. | Boron phosphide-based semiconductor device and production method thereof |
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