FR2406286A1 - Memoire a semi-conducteurs a acces direct dynamique et cellule dynamique a transfert de charge vertical pour une telle memoire - Google Patents

Memoire a semi-conducteurs a acces direct dynamique et cellule dynamique a transfert de charge vertical pour une telle memoire

Info

Publication number
FR2406286A1
FR2406286A1 FR7829137A FR7829137A FR2406286A1 FR 2406286 A1 FR2406286 A1 FR 2406286A1 FR 7829137 A FR7829137 A FR 7829137A FR 7829137 A FR7829137 A FR 7829137A FR 2406286 A1 FR2406286 A1 FR 2406286A1
Authority
FR
France
Prior art keywords
memory
dynamic
direct access
conductor
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7829137A
Other languages
English (en)
French (fr)
Other versions
FR2406286B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of FR2406286A1 publication Critical patent/FR2406286A1/fr
Application granted granted Critical
Publication of FR2406286B1 publication Critical patent/FR2406286B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
FR7829137A 1977-10-13 1978-10-12 Memoire a semi-conducteurs a acces direct dynamique et cellule dynamique a transfert de charge vertical pour une telle memoire Granted FR2406286A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84173577A 1977-10-13 1977-10-13

Publications (2)

Publication Number Publication Date
FR2406286A1 true FR2406286A1 (fr) 1979-05-11
FR2406286B1 FR2406286B1 (enExample) 1983-04-15

Family

ID=25285575

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7829137A Granted FR2406286A1 (fr) 1977-10-13 1978-10-12 Memoire a semi-conducteurs a acces direct dynamique et cellule dynamique a transfert de charge vertical pour une telle memoire

Country Status (4)

Country Link
JP (1) JPS5465489A (enExample)
DE (1) DE2844762A1 (enExample)
FR (1) FR2406286A1 (enExample)
GB (2) GB2095901B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0007910A4 (en) * 1978-01-03 1980-11-28 Darrell M Erb MULTI-LAYER CARGO STORAGE DEVICE.

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2855079A1 (de) * 1978-12-20 1980-07-17 Siemens Ag Halbleiter-speicherschaltung
GB2070329B (en) 1980-01-25 1983-10-26 Tokyo Shibaura Electric Co Semiconductor memory device
US4335450A (en) * 1980-01-30 1982-06-15 International Business Machines Corporation Non-destructive read out field effect transistor memory cell system
CN113363323B (zh) * 2020-03-05 2023-08-18 苏州大学 单栅场效应晶体管器件及调控其驱动电流的方法
KR20230165567A (ko) 2022-05-27 2023-12-05 삼성전자주식회사 반도체 메모리 소자 및 그 제조방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740731A (en) * 1971-08-02 1973-06-19 Texas Instruments Inc One transistor dynamic memory cell
FR2231074A1 (enExample) * 1973-05-21 1974-12-20 Signetics Corp
GB1412132A (en) * 1972-10-10 1975-10-29 Texas Instruments Inc Dynamic data storage cell
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element
FR2326761A1 (fr) * 1975-09-30 1977-04-29 Siemens Ag Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvre

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740731A (en) * 1971-08-02 1973-06-19 Texas Instruments Inc One transistor dynamic memory cell
GB1412132A (en) * 1972-10-10 1975-10-29 Texas Instruments Inc Dynamic data storage cell
FR2231074A1 (enExample) * 1973-05-21 1974-12-20 Signetics Corp
FR2326761A1 (fr) * 1975-09-30 1977-04-29 Siemens Ag Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvre
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/76 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0007910A4 (en) * 1978-01-03 1980-11-28 Darrell M Erb MULTI-LAYER CARGO STORAGE DEVICE.

Also Published As

Publication number Publication date
GB2006523B (en) 1982-12-01
GB2095901A (en) 1982-10-06
JPS5465489A (en) 1979-05-26
DE2844762A1 (de) 1979-04-19
GB2006523A (en) 1979-05-02
FR2406286B1 (enExample) 1983-04-15
GB2095901B (en) 1983-02-23

Similar Documents

Publication Publication Date Title
US4630088A (en) MOS dynamic ram
US4476547A (en) DRAM with interleaved folded bit lines
ES2003376A6 (es) Dispositivo de memoria dinamica y metodo para fabricarlo.
JPS6445160A (en) Semiconductor memory device and its manufacture
TW375795B (en) Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array
MY118306A (en) Self- aligned diffused source vertical transistors with stack capacitors in a 4f- square memory cell array
EP0344447A3 (en) Pillar dram cell
KR930017185A (ko) 동적 랜덤 액세스 메모리 디바이스 및 그의 제조방법
US4250519A (en) Semiconductor devices having VMOS transistors and VMOS dynamic memory cells
US4733374A (en) Dynamic semiconductor memory device
FR2406286A1 (fr) Memoire a semi-conducteurs a acces direct dynamique et cellule dynamique a transfert de charge vertical pour une telle memoire
US4918500A (en) Semiconductor device having trench capacitor and manufacturing method therefor
US4977436A (en) High density DRAM
US4953125A (en) Semiconductor memory device having improved connecting structure of bit line and memory cell
US4392210A (en) One transistor-one capacitor memory cell
US5010379A (en) Semiconductor memory device with two storage nodes
JPS63211750A (ja) 半導体記憶装置
US4471368A (en) Dynamic RAM memory and vertical charge coupled dynamic storage cell therefor
US4388121A (en) Reduced field implant for dynamic memory cell array
JPH0612805B2 (ja) 半導体記憶装置の製造方法
US5027173A (en) Semiconductor memory device with two separate gates per block
US5200353A (en) Method of manufacturing a semiconductor device having trench capacitor
US4866494A (en) Semiconductor memory device having a plurality of memory cells of single transistor type
JPH0680805B2 (ja) Ｍｉｓ型半導体記憶装置
GB1422586A (en) Integrated circuits

Legal Events

Date Code Title Description
ST Notification of lapse