JPS5465489A - Dynamic storage cell - Google Patents
Dynamic storage cellInfo
- Publication number
- JPS5465489A JPS5465489A JP12567878A JP12567878A JPS5465489A JP S5465489 A JPS5465489 A JP S5465489A JP 12567878 A JP12567878 A JP 12567878A JP 12567878 A JP12567878 A JP 12567878A JP S5465489 A JPS5465489 A JP S5465489A
- Authority
- JP
- Japan
- Prior art keywords
- storage cell
- dynamic storage
- dynamic
- cell
- storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 210000000352 storage cell Anatomy 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US84173577A | 1977-10-13 | 1977-10-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5465489A true JPS5465489A (en) | 1979-05-26 |
Family
ID=25285575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12567878A Pending JPS5465489A (en) | 1977-10-13 | 1978-10-12 | Dynamic storage cell |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5465489A (en) |
DE (1) | DE2844762A1 (en) |
FR (1) | FR2406286A1 (en) |
GB (2) | GB2006523B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1979000474A1 (en) * | 1978-01-03 | 1979-07-26 | D Erb | A stratified charge memory device |
DE2855079A1 (en) * | 1978-12-20 | 1980-07-17 | Siemens Ag | SEMICONDUCTOR MEMORY CIRCUIT |
GB2070329B (en) | 1980-01-25 | 1983-10-26 | Tokyo Shibaura Electric Co | Semiconductor memory device |
US4335450A (en) * | 1980-01-30 | 1982-06-15 | International Business Machines Corporation | Non-destructive read out field effect transistor memory cell system |
CN113363323B (en) * | 2020-03-05 | 2023-08-18 | 苏州大学 | Single gate field effect transistor device and method for regulating and controlling driving current thereof |
KR20230165567A (en) * | 2022-05-27 | 2023-12-05 | 삼성전자주식회사 | Semiconductor memory device and method for manufacturing the same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3740731A (en) * | 1971-08-02 | 1973-06-19 | Texas Instruments Inc | One transistor dynamic memory cell |
GB1412132A (en) * | 1972-10-10 | 1975-10-29 | Texas Instruments Inc | Dynamic data storage cell |
CA1030263A (en) * | 1973-05-21 | 1978-04-25 | James A. Marley (Jr.) | Single bipolar transistor memory cell and method |
FR2326761A1 (en) * | 1975-09-30 | 1977-04-29 | Siemens Ag | MEMORY OF INFORMATION FOR STORING INFORMATION IN THE FORM OF ELECTRIC CHARGERS AND PROCESS FOR ITS IMPLEMENTATION |
US4003036A (en) * | 1975-10-23 | 1977-01-11 | American Micro-Systems, Inc. | Single IGFET memory cell with buried storage element |
-
1978
- 1978-10-04 GB GB7839260A patent/GB2006523B/en not_active Expired
- 1978-10-04 GB GB8136432A patent/GB2095901B/en not_active Expired
- 1978-10-12 JP JP12567878A patent/JPS5465489A/en active Pending
- 1978-10-12 FR FR7829137A patent/FR2406286A1/en active Granted
- 1978-10-13 DE DE19782844762 patent/DE2844762A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
DE2844762A1 (en) | 1979-04-19 |
GB2006523B (en) | 1982-12-01 |
FR2406286B1 (en) | 1983-04-15 |
GB2095901A (en) | 1982-10-06 |
GB2006523A (en) | 1979-05-02 |
FR2406286A1 (en) | 1979-05-11 |
GB2095901B (en) | 1983-02-23 |
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