FR2326761A1 - MEMORY OF INFORMATION FOR STORING INFORMATION IN THE FORM OF ELECTRIC CHARGERS AND PROCESS FOR ITS IMPLEMENTATION - Google Patents

MEMORY OF INFORMATION FOR STORING INFORMATION IN THE FORM OF ELECTRIC CHARGERS AND PROCESS FOR ITS IMPLEMENTATION

Info

Publication number
FR2326761A1
FR2326761A1 FR7627472A FR7627472A FR2326761A1 FR 2326761 A1 FR2326761 A1 FR 2326761A1 FR 7627472 A FR7627472 A FR 7627472A FR 7627472 A FR7627472 A FR 7627472A FR 2326761 A1 FR2326761 A1 FR 2326761A1
Authority
FR
France
Prior art keywords
information
implementation
memory
electric chargers
storing information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7627472A
Other languages
French (fr)
Other versions
FR2326761B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2543628A external-priority patent/DE2543628C2/en
Priority claimed from DE2543677A external-priority patent/DE2543677C3/en
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2326761A1 publication Critical patent/FR2326761A1/en
Application granted granted Critical
Publication of FR2326761B1 publication Critical patent/FR2326761B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR7627472A 1975-09-30 1976-09-13 MEMORY OF INFORMATION FOR STORING INFORMATION IN THE FORM OF ELECTRIC CHARGERS AND PROCESS FOR ITS IMPLEMENTATION Granted FR2326761A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2543628A DE2543628C2 (en) 1975-09-30 1975-09-30 Semiconductor component for storing information in the form of electrical charges, method for its operation and information storage with such semiconductor components
DE2543677A DE2543677C3 (en) 1975-09-30 1975-09-30 Dynamic semiconductor memory element and method for its operation

Publications (2)

Publication Number Publication Date
FR2326761A1 true FR2326761A1 (en) 1977-04-29
FR2326761B1 FR2326761B1 (en) 1978-10-20

Family

ID=25769458

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7627472A Granted FR2326761A1 (en) 1975-09-30 1976-09-13 MEMORY OF INFORMATION FOR STORING INFORMATION IN THE FORM OF ELECTRIC CHARGERS AND PROCESS FOR ITS IMPLEMENTATION

Country Status (5)

Country Link
JP (1) JPS5243381A (en)
FR (1) FR2326761A1 (en)
GB (1) GB1564617A (en)
IT (1) IT1072548B (en)
NL (1) NL7610696A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2406286A1 (en) * 1977-10-13 1979-05-11 Mohsen Amr SEMICONDUCTOR MEMORY WITH DYNAMIC DIRECT ACCESS AND DYNAMIC CELL WITH VERTICAL LOAD TRANSFER FOR SUCH A MEMORY
EP0011686A1 (en) * 1978-09-29 1980-06-11 Siemens Aktiengesellschaft Highly integrated dynamic memory cell and its method of operation
FR2486310A1 (en) * 1980-07-04 1982-01-08 Philips Nv FIELD EFFECT CAPACITY

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162458A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Semiconductor device
JPS59154077A (en) * 1983-02-23 1984-09-03 Clarion Co Ltd Variable capacitance element
JPH0661465A (en) * 1992-08-11 1994-03-04 Mitsubishi Electric Corp Infrared image sensing element
CN105953975A (en) * 2016-07-19 2016-09-21 农业部南京农业机械化研究所 Weight and lever type removable static calibration device and calibration method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2144903A1 (en) * 1971-07-06 1973-02-16 Ibm

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2144903A1 (en) * 1971-07-06 1973-02-16 Ibm

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2406286A1 (en) * 1977-10-13 1979-05-11 Mohsen Amr SEMICONDUCTOR MEMORY WITH DYNAMIC DIRECT ACCESS AND DYNAMIC CELL WITH VERTICAL LOAD TRANSFER FOR SUCH A MEMORY
EP0011686A1 (en) * 1978-09-29 1980-06-11 Siemens Aktiengesellschaft Highly integrated dynamic memory cell and its method of operation
FR2486310A1 (en) * 1980-07-04 1982-01-08 Philips Nv FIELD EFFECT CAPACITY

Also Published As

Publication number Publication date
NL7610696A (en) 1977-04-01
IT1072548B (en) 1985-04-10
FR2326761B1 (en) 1978-10-20
GB1564617A (en) 1980-04-10
JPS5243381A (en) 1977-04-05
JPS6348187B2 (en) 1988-09-28

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Legal Events

Date Code Title Description
ST Notification of lapse