JPS5243381A - Information memory for storing information as charge and method of driving same - Google Patents

Information memory for storing information as charge and method of driving same

Info

Publication number
JPS5243381A
JPS5243381A JP51117884A JP11788476A JPS5243381A JP S5243381 A JPS5243381 A JP S5243381A JP 51117884 A JP51117884 A JP 51117884A JP 11788476 A JP11788476 A JP 11788476A JP S5243381 A JPS5243381 A JP S5243381A
Authority
JP
Japan
Prior art keywords
charge
information
driving same
storing information
information memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51117884A
Other languages
Japanese (ja)
Other versions
JPS6348187B2 (en
Inventor
Hofuman Kuruto
Miisuburugaa Giyuntaa
Uotoruba Gotsutofuriito
Kunaueru Karuru
Furaideraa Hansuieruku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19752543628 external-priority patent/DE2543628A1/en
Priority claimed from DE2543677A external-priority patent/DE2543677C3/en
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5243381A publication Critical patent/JPS5243381A/en
Publication of JPS6348187B2 publication Critical patent/JPS6348187B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
JP51117884A 1975-09-30 1976-09-30 Information memory for storing information as charge and method of driving same Granted JPS5243381A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19752543628 DE2543628A1 (en) 1975-09-30 1975-09-30 INFORMATION STORAGE FOR STORING INFORMATION IN THE FORM OF ELECTRIC CHARGE CARRIERS AND PROCEDURES ABOUT ITS OPERATION
DE2543677A DE2543677C3 (en) 1975-09-30 1975-09-30 Dynamic semiconductor memory element and method for its operation

Publications (2)

Publication Number Publication Date
JPS5243381A true JPS5243381A (en) 1977-04-05
JPS6348187B2 JPS6348187B2 (en) 1988-09-28

Family

ID=25769458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51117884A Granted JPS5243381A (en) 1975-09-30 1976-09-30 Information memory for storing information as charge and method of driving same

Country Status (5)

Country Link
JP (1) JPS5243381A (en)
FR (1) FR2326761A1 (en)
GB (1) GB1564617A (en)
IT (1) IT1072548B (en)
NL (1) NL7610696A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162458A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Semiconductor device
JPH0661465A (en) * 1992-08-11 1994-03-04 Mitsubishi Electric Corp Infrared image sensing element
CN105953975A (en) * 2016-07-19 2016-09-21 农业部南京农业机械化研究所 Weight and lever type removable static calibration device and calibration method

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2095901B (en) * 1977-10-13 1983-02-23 Mohsen Amr Mohamed An mos transistor
DE2842588A1 (en) * 1978-09-29 1980-04-17 Siemens Ag HIGHLY INTEGRATED, DYNAMIC MEMORY ELEMENT
NL8003874A (en) * 1980-07-04 1982-02-01 Philips Nv FIELD EFFICIENCY CAPACITY.
JPS59154077A (en) * 1983-02-23 1984-09-03 Clarion Co Ltd Variable capacitance element

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES404184A1 (en) * 1971-07-06 1975-06-01 Ibm A cellular disposal of casual access memory for digital calculators. (Machine-translation by Google Translate, not legally binding)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162458A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Semiconductor device
JPH0322063B2 (en) * 1981-03-31 1991-03-26 Fujitsu Ltd
JPH0661465A (en) * 1992-08-11 1994-03-04 Mitsubishi Electric Corp Infrared image sensing element
CN105953975A (en) * 2016-07-19 2016-09-21 农业部南京农业机械化研究所 Weight and lever type removable static calibration device and calibration method

Also Published As

Publication number Publication date
FR2326761A1 (en) 1977-04-29
NL7610696A (en) 1977-04-01
JPS6348187B2 (en) 1988-09-28
FR2326761B1 (en) 1978-10-20
IT1072548B (en) 1985-04-10
GB1564617A (en) 1980-04-10

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