FR2395606A1 - Structure de capacite amelioree a champ eleve utilisant une region de piegeage de porteurs - Google Patents

Structure de capacite amelioree a champ eleve utilisant une region de piegeage de porteurs

Info

Publication number
FR2395606A1
FR2395606A1 FR7804188A FR7804188A FR2395606A1 FR 2395606 A1 FR2395606 A1 FR 2395606A1 FR 7804188 A FR7804188 A FR 7804188A FR 7804188 A FR7804188 A FR 7804188A FR 2395606 A1 FR2395606 A1 FR 2395606A1
Authority
FR
France
Prior art keywords
layer
high field
trap region
carrier trap
improved capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7804188A
Other languages
English (en)
French (fr)
Other versions
FR2395606B1 (https=
Inventor
Donelli J Dimaria
Donald R Youg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to FR7804188A priority Critical patent/FR2395606A1/fr
Publication of FR2395606A1 publication Critical patent/FR2395606A1/fr
Application granted granted Critical
Publication of FR2395606B1 publication Critical patent/FR2395606B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/40—Ion implantation into wafers, substrates or parts of devices into insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
FR7804188A 1978-02-08 1978-02-08 Structure de capacite amelioree a champ eleve utilisant une region de piegeage de porteurs Granted FR2395606A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7804188A FR2395606A1 (fr) 1978-02-08 1978-02-08 Structure de capacite amelioree a champ eleve utilisant une region de piegeage de porteurs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7804188A FR2395606A1 (fr) 1978-02-08 1978-02-08 Structure de capacite amelioree a champ eleve utilisant une region de piegeage de porteurs

Publications (2)

Publication Number Publication Date
FR2395606A1 true FR2395606A1 (fr) 1979-01-19
FR2395606B1 FR2395606B1 (https=) 1980-03-14

Family

ID=9204595

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7804188A Granted FR2395606A1 (fr) 1978-02-08 1978-02-08 Structure de capacite amelioree a champ eleve utilisant une region de piegeage de porteurs

Country Status (1)

Country Link
FR (1) FR2395606A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0016246A1 (fr) * 1979-02-15 1980-10-01 International Business Machines Corporation Structure semi-conductrice à effet de champ du type métal-isolant-métal ou métal-isolant-semi-conducteur et élément de mémoire comportant une telle structure
EP0308814A3 (en) * 1987-09-21 1989-04-26 National Semiconductor Corporation Modification of interfacial fields between dielectrics amodification of interfacial fields between dielectrics and semiconductors nd semiconductors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2056947A1 (en) * 1970-11-20 1972-06-29 Fraunhofer Ges Forschung Mos surface stabilization - by ion implantation and tempering in hydrogen atmosphere
US3945031A (en) * 1973-12-10 1976-03-16 Bell Telephone Laboratories, Incorporated Charge effects in doped silicon dioxide

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2056947A1 (en) * 1970-11-20 1972-06-29 Fraunhofer Ges Forschung Mos surface stabilization - by ion implantation and tempering in hydrogen atmosphere
US3945031A (en) * 1973-12-10 1976-03-16 Bell Telephone Laboratories, Incorporated Charge effects in doped silicon dioxide

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NV1046/75 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0016246A1 (fr) * 1979-02-15 1980-10-01 International Business Machines Corporation Structure semi-conductrice à effet de champ du type métal-isolant-métal ou métal-isolant-semi-conducteur et élément de mémoire comportant une telle structure
EP0308814A3 (en) * 1987-09-21 1989-04-26 National Semiconductor Corporation Modification of interfacial fields between dielectrics amodification of interfacial fields between dielectrics and semiconductors nd semiconductors
US6117749A (en) * 1987-09-21 2000-09-12 National Semiconductor Corporation Modification of interfacial fields between dielectrics and semiconductors

Also Published As

Publication number Publication date
FR2395606B1 (https=) 1980-03-14

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Legal Events

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