FR2394798A1 - Appareil d'analyse par fluorescence a rayons x pour l'examen de couches peu profondes - Google Patents

Appareil d'analyse par fluorescence a rayons x pour l'examen de couches peu profondes

Info

Publication number
FR2394798A1
FR2394798A1 FR7815374A FR7815374A FR2394798A1 FR 2394798 A1 FR2394798 A1 FR 2394798A1 FR 7815374 A FR7815374 A FR 7815374A FR 7815374 A FR7815374 A FR 7815374A FR 2394798 A1 FR2394798 A1 FR 2394798A1
Authority
FR
France
Prior art keywords
ray fluorescence
analysis apparatus
incidence
examination
fluorescence analysis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7815374A
Other languages
English (en)
Other versions
FR2394798B1 (fr
Inventor
Mariam Briska
Armin Bohg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2394798A1 publication Critical patent/FR2394798A1/fr
Application granted granted Critical
Publication of FR2394798B1 publication Critical patent/FR2394798B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G01N2223/076—X-ray fluorescence

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

Appareil d'analyse à fluorescence par rayons X. Un rayon X primaire, fortement parallèle 2 frappe sous un angle d'incidence correspondant à une réflexion totale la surface de l'échantillon 6. La radiation de fluorescence par rayon X caractéristique 9 émise par la surface de l'échantillon est enregistrée et identifiée au moyen d'un détecteur d'énergie dispersive 10. Des couches de faible profondeur allant de 10 Angstrom jusqu'à 1 micron peuvent être analysées, l'angle d'incidence plat variant de quelques secondes à 1 degrés ou 2 degrés . En déterminant l'intensité de fluorescence avec un angle variable d'incidence de la radiation primaire on peut déterminer des profils. Peut être utilisé pour l'analyse non destructive en cours de fabrication d'éléments semi-conducteurs.
FR7815374A 1977-06-18 1978-05-18 Appareil d'analyse par fluorescence a rayons x pour l'examen de couches peu profondes Granted FR2394798A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772727505 DE2727505A1 (de) 1977-06-18 1977-06-18 Roentgenfluoreszenzanalyse zur untersuchung oberflaechennaher schichten

Publications (2)

Publication Number Publication Date
FR2394798A1 true FR2394798A1 (fr) 1979-01-12
FR2394798B1 FR2394798B1 (fr) 1980-06-13

Family

ID=6011807

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7815374A Granted FR2394798A1 (fr) 1977-06-18 1978-05-18 Appareil d'analyse par fluorescence a rayons x pour l'examen de couches peu profondes

Country Status (4)

Country Link
US (1) US4169228A (fr)
JP (1) JPS547991A (fr)
DE (1) DE2727505A1 (fr)
FR (1) FR2394798A1 (fr)

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JPS6082840A (ja) * 1983-10-13 1985-05-11 Shozo Ino 元素分析方法およびその装置
JPS60263841A (ja) * 1984-06-12 1985-12-27 Rigaku Denki Kk 薄膜試料ｘ線回折装置
EP0197157B1 (fr) * 1984-10-05 1991-07-10 Kawasaki Steel Corporation Procede permettant de determiner l'epaisseur et la composition d'un film en alliage
US4672212A (en) * 1985-02-28 1987-06-09 Instrument Ab Scanditronax Multi leaf collimator
DE3542003A1 (de) * 1985-11-28 1987-06-04 Geesthacht Gkss Forschung Verfahren zur zerstoerungsfreien analyse der oberflaechenschicht von proben
US4821301A (en) * 1986-02-28 1989-04-11 Duke University X-ray reflection method and apparatus for chemical analysis of thin surface layers
DE3606748C1 (de) * 1986-03-01 1987-10-01 Geesthacht Gkss Forschung Anordnung zur zerstoerungsfreien Messung von Metallspuren
JPS63177047A (ja) * 1987-01-19 1988-07-21 Nec Corp 深さ方向分析装置
JPH0381640A (ja) * 1989-08-24 1991-04-08 Sumitomo Electric Ind Ltd 試料採取方法及び試料採取装置
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US5249216B1 (en) * 1989-10-19 1996-11-05 Sumitomo Electric Industries Total reflection x-ray fluorescence apparatus
JP2535675B2 (ja) * 1990-06-28 1996-09-18 株式会社東芝 全反射蛍光ｘ線分析装置
DE4028043A1 (de) * 1990-09-05 1992-03-12 Geesthacht Gkss Forschung Verfahren und vorrichtung zur analyse und bestimmung der konzentration von elementen im oberflaechenbereich von objekten
DE4028044A1 (de) * 1990-09-05 1992-03-12 Geesthacht Gkss Forschung Verfahren und vorrichtung zur analyse und bestimmung der konzentration von elementen in vorbestimmten tiefen von objekten
JPH04270953A (ja) * 1991-01-09 1992-09-28 Mitsubishi Electric Corp 元素分析方法および元素分析装置ならびに薄膜形成装置
DE4130556C2 (de) * 1991-09-13 1996-07-04 Picolab Oberflaechen Und Spure Vorrichtung zur Totalreflexions-Röntgenfluoreszenzanalyse
JP2975476B2 (ja) * 1992-03-30 1999-11-10 三井金属鉱業株式会社 結晶内のフォトルミネッセンス計測方法及び装置
US5280176A (en) * 1992-11-06 1994-01-18 The United States Of America As Represented By The Secretary Of Commerce X-ray photoelectron emission spectrometry system
JP2954819B2 (ja) * 1993-10-07 1999-09-27 株式会社東芝 全反射蛍光ｘ線分析装置の校正方法
JP2664632B2 (ja) * 1994-01-24 1997-10-15 理学電機工業株式会社 全反射蛍光ｘ線分析装置
US5537451A (en) * 1995-05-26 1996-07-16 Pohl Otto Method and apparatus for detecting trace elements in a substance through x-ray fluorescence
US6173036B1 (en) * 1997-08-01 2001-01-09 Advanced Micro Devices, Inc. Depth profile metrology using grazing incidence X-ray fluorescence
US6351516B1 (en) * 1999-12-14 2002-02-26 Jordan Valley Applied Radiation Ltd. Detection of voids in semiconductor wafer processing
US6453006B1 (en) * 2000-03-16 2002-09-17 Therma-Wave, Inc. Calibration and alignment of X-ray reflectometric systems
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US6611576B1 (en) 2001-02-12 2003-08-26 Advanced Micro Devices, Inc. Automated control of metal thickness during film deposition
JP3581848B2 (ja) * 2001-11-16 2004-10-27 株式会社リガク Ｘ線装置用アタッチメント、試料高温装置及びｘ線装置
US7420163B2 (en) * 2005-04-29 2008-09-02 Revera Incorporated Determining layer thickness using photoelectron spectroscopy
US9390984B2 (en) 2011-10-11 2016-07-12 Bruker Jv Israel Ltd. X-ray inspection of bumps on a semiconductor substrate
US9389192B2 (en) 2013-03-24 2016-07-12 Bruker Jv Israel Ltd. Estimation of XRF intensity from an array of micro-bumps
US9575018B2 (en) * 2013-09-16 2017-02-21 Cerium Laboratories, Llc System and method for testing ceramic coatings
US9632043B2 (en) 2014-05-13 2017-04-25 Bruker Jv Israel Ltd. Method for accurately determining the thickness and/or elemental composition of small features on thin-substrates using micro-XRF
US9829448B2 (en) 2014-10-30 2017-11-28 Bruker Jv Israel Ltd. Measurement of small features using XRF
CN107110798B (zh) * 2014-12-25 2019-08-16 株式会社理学 掠入射荧光x射线分析装置和方法
US10468230B2 (en) * 2018-04-10 2019-11-05 Bae Systems Information And Electronic Systems Integration Inc. Nondestructive sample imaging
US11340179B2 (en) 2019-10-21 2022-05-24 Bae Systems Information And Electronic System Integration Inc. Nanofabricated structures for sub-beam resolution and spectral enhancement in tomographic imaging
JP7395775B2 (ja) 2020-05-18 2023-12-11 シグレイ、インコーポレイテッド 結晶解析装置及び複数の検出器素子を使用するｘ線吸収分光法のためのシステム及び方法
DE112021004828T5 (de) * 2020-09-17 2023-08-03 Sigray, Inc. System und verfahren unter verwendung von röntgenstrahlen für tiefenauflösende messtechnik und analyse
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CN114486969B (zh) * 2022-01-14 2023-11-24 中国科学院上海高等研究院 一种原位电池界面的软x射线荧光吸收谱测试系统及方法
US11992350B2 (en) 2022-03-15 2024-05-28 Sigray, Inc. System and method for compact laminography utilizing microfocus transmission x-ray source and variable magnification x-ray detector
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Citations (1)

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FR2358653A1 (fr) * 1976-07-16 1978-02-10 Kernenergieverwert Ges Fuer Dispositif de mesure pour analyses par fluorescence aux rayons x

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Patent Citations (1)

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Non-Patent Citations (1)

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Also Published As

Publication number Publication date
US4169228A (en) 1979-09-25
DE2727505A1 (de) 1979-01-04
JPS547991A (en) 1979-01-20
FR2394798B1 (fr) 1980-06-13

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