FR2386166A2 - Laser a injection - Google Patents
Laser a injectionInfo
- Publication number
- FR2386166A2 FR2386166A2 FR7809456A FR7809456A FR2386166A2 FR 2386166 A2 FR2386166 A2 FR 2386166A2 FR 7809456 A FR7809456 A FR 7809456A FR 7809456 A FR7809456 A FR 7809456A FR 2386166 A2 FR2386166 A2 FR 2386166A2
- Authority
- FR
- France
- Prior art keywords
- rib
- injection laser
- laser
- zinc
- penetrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002347 injection Methods 0.000 title abstract 2
- 239000007924 injection Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/035—Diffusion through a layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/923—Diffusion through a layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Geometry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Weting (AREA)
Abstract
La présente addition concerne des lasers à injection à double hétérostructure munis d'une nervure sur leur face supérieure. Au cours du procédé de fabrication, une couche de silice poreuse dopée au zinc est utilisée comme source de dopant de type p. La diffusion de zinc est prévue pour pénétrer à travers la couche active 32 du laser. Les dimensions du dispositif sont telles que le guidage optique latéral n'est pas affecté par la nervure supérieure. Application aux lasers à semi-conducteurs monomodes.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB13972/77A GB1558642A (en) | 1977-04-01 | 1977-04-01 | Injection lasers |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2386166A2 true FR2386166A2 (fr) | 1978-10-27 |
FR2386166B2 FR2386166B2 (fr) | 1983-12-30 |
Family
ID=10032713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7809456A Granted FR2386166A2 (fr) | 1977-04-01 | 1978-03-31 | Laser a injection |
Country Status (5)
Country | Link |
---|---|
US (2) | US4203079A (fr) |
JP (1) | JPS53144284A (fr) |
DE (1) | DE2812728A1 (fr) |
FR (1) | FR2386166A2 (fr) |
GB (1) | GB1558642A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0020254A1 (fr) * | 1979-06-01 | 1980-12-10 | Thomson-Csf | Diode laser à émission localisée |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7811683A (nl) * | 1978-11-29 | 1980-06-02 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderin- richting en halfgeleiderinrichting vervaardigd volgens deze werkwijze. |
US4450568A (en) * | 1981-11-13 | 1984-05-22 | Maxwell Laboratories, Inc. | Pumping a photolytic laser utilizing a plasma pinch |
US4502898A (en) * | 1983-12-21 | 1985-03-05 | At&T Bell Laboratories | Diffusion procedure for semiconductor compound |
JP2533078B2 (ja) * | 1984-11-27 | 1996-09-11 | ソニー株式会社 | 不純物拡散方法 |
JPH03131083A (ja) * | 1989-10-17 | 1991-06-04 | Mitsubishi Electric Corp | 半導体レーザ装置の製造方法 |
US5222091A (en) * | 1990-09-14 | 1993-06-22 | Gte Laboratories Incorporated | Structure for indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor |
US5082799A (en) * | 1990-09-14 | 1992-01-21 | Gte Laboratories Incorporated | Method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers |
JP5337221B2 (ja) | 2011-10-07 | 2013-11-06 | パスカルエンジニアリング株式会社 | 流体圧シリンダ及びクランプ装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1263835A (en) * | 1970-10-15 | 1972-02-16 | Standard Telephones Cables Ltd | Improvements in or relating to injection lasers |
JPS4946878A (fr) * | 1972-09-08 | 1974-05-07 | ||
US4016505A (en) * | 1973-03-20 | 1977-04-05 | Matsushita Electronics Corporation | Double heterostructure semiconductor laser |
GB1461636A (en) * | 1974-03-05 | 1977-01-13 | Standard Telephones Cables Ltd | Plasna etching |
GB1482936A (en) * | 1974-10-29 | 1977-08-17 | Standard Telephones Cables Ltd | Semiconductor lasers |
GB1531238A (en) * | 1975-01-09 | 1978-11-08 | Standard Telephones Cables Ltd | Injection lasers |
US3982265A (en) * | 1975-09-19 | 1976-09-21 | Bell Telephone Laboratories, Incorporated | Devices containing aluminum-V semiconductor and method for making |
JPS5245296A (en) * | 1975-10-07 | 1977-04-09 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductive phototransmission pass and semiconductor emission devic e used it |
DE2601652C3 (de) * | 1976-01-17 | 1979-11-08 | Metallurgie Hoboken-Overpelt, Bruessel | Verfahren zur epitaxialen Abscheidung einer Am. Bv Halbleiterschicht auf einem Germaniumsubstrat mit einer (100)-Orientierong |
JPS52109884A (en) * | 1976-03-11 | 1977-09-14 | Nec Corp | Stripe type hetero junction semoonductor laser |
US4184170A (en) * | 1977-02-11 | 1980-01-15 | Xerox Corporation | Light emitting diode |
GB1552268A (en) * | 1977-04-01 | 1979-09-12 | Standard Telephones Cables Ltd | Semiconductor etching |
US4139442A (en) * | 1977-09-13 | 1979-02-13 | International Business Machines Corporation | Reactive ion etching method for producing deep dielectric isolation in silicon |
-
1977
- 1977-04-01 GB GB13972/77A patent/GB1558642A/en not_active Expired
-
1978
- 1978-03-13 US US05/886,235 patent/US4203079A/en not_active Expired - Lifetime
- 1978-03-23 DE DE19782812728 patent/DE2812728A1/de not_active Withdrawn
- 1978-03-31 JP JP3800578A patent/JPS53144284A/ja active Pending
- 1978-03-31 FR FR7809456A patent/FR2386166A2/fr active Granted
-
1979
- 1979-09-28 US US06/080,355 patent/US4264381A/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0020254A1 (fr) * | 1979-06-01 | 1980-12-10 | Thomson-Csf | Diode laser à émission localisée |
FR2458158A1 (fr) * | 1979-06-01 | 1980-12-26 | Thomson Csf | Diode laser a emission localisee et emetteur opto-electronique utilisant une telle diode |
EP0061784A1 (fr) * | 1979-06-01 | 1982-10-06 | Thomson-Csf | Diode laser à émission localisée |
Also Published As
Publication number | Publication date |
---|---|
JPS53144284A (en) | 1978-12-15 |
US4203079A (en) | 1980-05-13 |
DE2812728A1 (de) | 1978-10-12 |
FR2386166B2 (fr) | 1983-12-30 |
GB1558642A (en) | 1980-01-09 |
US4264381A (en) | 1981-04-28 |
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