FR2386166A2 - Laser a injection - Google Patents

Laser a injection

Info

Publication number
FR2386166A2
FR2386166A2 FR7809456A FR7809456A FR2386166A2 FR 2386166 A2 FR2386166 A2 FR 2386166A2 FR 7809456 A FR7809456 A FR 7809456A FR 7809456 A FR7809456 A FR 7809456A FR 2386166 A2 FR2386166 A2 FR 2386166A2
Authority
FR
France
Prior art keywords
rib
injection laser
laser
zinc
penetrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7809456A
Other languages
English (en)
Other versions
FR2386166B2 (fr
Inventor
George Horace Brooke Thompson
David Francis Lovelace
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Publication of FR2386166A2 publication Critical patent/FR2386166A2/fr
Application granted granted Critical
Publication of FR2386166B2 publication Critical patent/FR2386166B2/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/035—Diffusion through a layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/923—Diffusion through a layer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Weting (AREA)

Abstract

La présente addition concerne des lasers à injection à double hétérostructure munis d'une nervure sur leur face supérieure. Au cours du procédé de fabrication, une couche de silice poreuse dopée au zinc est utilisée comme source de dopant de type p. La diffusion de zinc est prévue pour pénétrer à travers la couche active 32 du laser. Les dimensions du dispositif sont telles que le guidage optique latéral n'est pas affecté par la nervure supérieure. Application aux lasers à semi-conducteurs monomodes.
FR7809456A 1977-04-01 1978-03-31 Laser a injection Granted FR2386166A2 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB13972/77A GB1558642A (en) 1977-04-01 1977-04-01 Injection lasers

Publications (2)

Publication Number Publication Date
FR2386166A2 true FR2386166A2 (fr) 1978-10-27
FR2386166B2 FR2386166B2 (fr) 1983-12-30

Family

ID=10032713

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7809456A Granted FR2386166A2 (fr) 1977-04-01 1978-03-31 Laser a injection

Country Status (5)

Country Link
US (2) US4203079A (fr)
JP (1) JPS53144284A (fr)
DE (1) DE2812728A1 (fr)
FR (1) FR2386166A2 (fr)
GB (1) GB1558642A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0020254A1 (fr) * 1979-06-01 1980-12-10 Thomson-Csf Diode laser à émission localisée

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7811683A (nl) * 1978-11-29 1980-06-02 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderin- richting en halfgeleiderinrichting vervaardigd volgens deze werkwijze.
US4450568A (en) * 1981-11-13 1984-05-22 Maxwell Laboratories, Inc. Pumping a photolytic laser utilizing a plasma pinch
US4502898A (en) * 1983-12-21 1985-03-05 At&T Bell Laboratories Diffusion procedure for semiconductor compound
JP2533078B2 (ja) * 1984-11-27 1996-09-11 ソニー株式会社 不純物拡散方法
JPH03131083A (ja) * 1989-10-17 1991-06-04 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
US5082799A (en) * 1990-09-14 1992-01-21 Gte Laboratories Incorporated Method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers
US5222091A (en) * 1990-09-14 1993-06-22 Gte Laboratories Incorporated Structure for indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor
JP5337221B2 (ja) 2011-10-07 2013-11-06 パスカルエンジニアリング株式会社 流体圧シリンダ及びクランプ装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1263835A (en) * 1970-10-15 1972-02-16 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
JPS4946878A (fr) * 1972-09-08 1974-05-07
US4016505A (en) * 1973-03-20 1977-04-05 Matsushita Electronics Corporation Double heterostructure semiconductor laser
GB1461636A (en) * 1974-03-05 1977-01-13 Standard Telephones Cables Ltd Plasna etching
GB1482936A (en) * 1974-10-29 1977-08-17 Standard Telephones Cables Ltd Semiconductor lasers
GB1531238A (en) * 1975-01-09 1978-11-08 Standard Telephones Cables Ltd Injection lasers
US3982265A (en) * 1975-09-19 1976-09-21 Bell Telephone Laboratories, Incorporated Devices containing aluminum-V semiconductor and method for making
JPS5245296A (en) * 1975-10-07 1977-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductive phototransmission pass and semiconductor emission devic e used it
DE2601652C3 (de) * 1976-01-17 1979-11-08 Metallurgie Hoboken-Overpelt, Bruessel Verfahren zur epitaxialen Abscheidung einer Am. Bv Halbleiterschicht auf einem Germaniumsubstrat mit einer (100)-Orientierong
JPS52109884A (en) * 1976-03-11 1977-09-14 Nec Corp Stripe type hetero junction semoonductor laser
US4184170A (en) * 1977-02-11 1980-01-15 Xerox Corporation Light emitting diode
GB1552268A (en) * 1977-04-01 1979-09-12 Standard Telephones Cables Ltd Semiconductor etching
US4139442A (en) * 1977-09-13 1979-02-13 International Business Machines Corporation Reactive ion etching method for producing deep dielectric isolation in silicon

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0020254A1 (fr) * 1979-06-01 1980-12-10 Thomson-Csf Diode laser à émission localisée
FR2458158A1 (fr) * 1979-06-01 1980-12-26 Thomson Csf Diode laser a emission localisee et emetteur opto-electronique utilisant une telle diode
EP0061784A1 (fr) * 1979-06-01 1982-10-06 Thomson-Csf Diode laser à émission localisée

Also Published As

Publication number Publication date
JPS53144284A (en) 1978-12-15
US4203079A (en) 1980-05-13
FR2386166B2 (fr) 1983-12-30
DE2812728A1 (de) 1978-10-12
GB1558642A (en) 1980-01-09
US4264381A (en) 1981-04-28

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