GB1461636A - Plasna etching - Google Patents
Plasna etchingInfo
- Publication number
- GB1461636A GB1461636A GB976974A GB976974A GB1461636A GB 1461636 A GB1461636 A GB 1461636A GB 976974 A GB976974 A GB 976974A GB 976974 A GB976974 A GB 976974A GB 1461636 A GB1461636 A GB 1461636A
- Authority
- GB
- United Kingdom
- Prior art keywords
- plasma
- wafers
- etched
- etching
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
Abstract
1461636 Plasma etching STANDARD TELEPHONES & CABLES Ltd 5 March 1974 9769/74 Heading B3V [Also in Division B6] An apparatus for chemically etching semiconductor wafers 10 by a gas plasma comprises a vessel 12 having gas inlet and outlet ports 16, 17, an electrically conductive, water cooled, earthed support 11 for supporting the wafers 10 such that their backs are prevented from being etched and an electrode system 31, 15 coupled to a RF generator 14 for generating a gas plasma. The support 11 is made of aluminium, stainless steel or nickel plated copper. Silica films on silicon wafers 10 can be etched if the plasma contains fluorine.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB976974A GB1461636A (en) | 1974-03-05 | 1974-03-05 | Plasna etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB976974A GB1461636A (en) | 1974-03-05 | 1974-03-05 | Plasna etching |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1461636A true GB1461636A (en) | 1977-01-13 |
Family
ID=9878435
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB976974A Expired GB1461636A (en) | 1974-03-05 | 1974-03-05 | Plasna etching |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1461636A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2812728A1 (en) * | 1977-04-01 | 1978-10-12 | Int Standard Electric Corp | DOUBLE HETEROSTRUCTURE INJECTION LASER AND METHOD OF ITS MANUFACTURING |
FR2463975A1 (en) * | 1979-08-22 | 1981-02-27 | Onera (Off Nat Aerospatiale) | METHOD AND APPARATUS FOR DRY CHEMICAL ETCHING OF INTEGRATED CIRCUITS |
FR2579058A1 (en) * | 1985-02-05 | 1986-09-19 | Psi Star Inc | PLASMA REACTOR COMPRISING A VOLTAGE TRANSFORMER |
EP0275188A2 (en) * | 1987-01-12 | 1988-07-20 | Olin Corporation | Improved plasma stripper with multiple contact point cathode |
EP0685873A1 (en) * | 1994-06-02 | 1995-12-06 | Applied Materials, Inc. | Inductively coupled plasma reactor with an electrode for enhancing plasma ignition |
-
1974
- 1974-03-05 GB GB976974A patent/GB1461636A/en not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2812728A1 (en) * | 1977-04-01 | 1978-10-12 | Int Standard Electric Corp | DOUBLE HETEROSTRUCTURE INJECTION LASER AND METHOD OF ITS MANUFACTURING |
FR2463975A1 (en) * | 1979-08-22 | 1981-02-27 | Onera (Off Nat Aerospatiale) | METHOD AND APPARATUS FOR DRY CHEMICAL ETCHING OF INTEGRATED CIRCUITS |
FR2579058A1 (en) * | 1985-02-05 | 1986-09-19 | Psi Star Inc | PLASMA REACTOR COMPRISING A VOLTAGE TRANSFORMER |
EP0275188A2 (en) * | 1987-01-12 | 1988-07-20 | Olin Corporation | Improved plasma stripper with multiple contact point cathode |
EP0275188A3 (en) * | 1987-01-12 | 1990-07-04 | Olin Corporation | Improved plasma stripper with multiple contact point cathode |
EP0685873A1 (en) * | 1994-06-02 | 1995-12-06 | Applied Materials, Inc. | Inductively coupled plasma reactor with an electrode for enhancing plasma ignition |
US5685941A (en) * | 1994-06-02 | 1997-11-11 | Applied Materials, Inc. | Inductively coupled plasma reactor with top electrode for enhancing plasma ignition |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PE20 | Patent expired after termination of 20 years |
Effective date: 19940304 |