FR2384389A1 - Modulation de polarisation du substrat pour ameliorer le rendement de circuits mosfet - Google Patents
Modulation de polarisation du substrat pour ameliorer le rendement de circuits mosfetInfo
- Publication number
- FR2384389A1 FR2384389A1 FR7804183A FR7804183A FR2384389A1 FR 2384389 A1 FR2384389 A1 FR 2384389A1 FR 7804183 A FR7804183 A FR 7804183A FR 7804183 A FR7804183 A FR 7804183A FR 2384389 A1 FR2384389 A1 FR 2384389A1
- Authority
- FR
- France
- Prior art keywords
- substrate
- voltage
- circuits
- performance
- improve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title abstract 4
- 230000010287 polarization Effects 0.000 title 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
- H03K19/09443—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Circuit à transistors à effet de champ MOS. La caractéristique du FET T2 de charge de l'inverseur B statique est améliorée en isolant le substrat dans lequel T2 est réalisé et en reliant celui-ci à un dispositif, inverseur A, élevant la tension du substrat lorsque la tension de source du FET T2 à appauvrissement s'accroît. Le potentiel du substrat est module pour changer plus rapidement que la tension de course. Ceci réduit la tension de seuil du dispositif de charge T2 lorsque la tension de sortie V0 augmente. Permet d'améliorer le rendement des circuits et peut être en particulier utilisé dans les circuits d'attaque de capacités ou dans des circuits inverseurs.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/777,793 US4092548A (en) | 1977-03-15 | 1977-03-15 | Substrate bias modulation to improve mosfet circuit performance |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2384389A1 true FR2384389A1 (fr) | 1978-10-13 |
FR2384389B1 FR2384389B1 (fr) | 1980-08-29 |
Family
ID=25111295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7804183A Granted FR2384389A1 (fr) | 1977-03-15 | 1978-02-08 | Modulation de polarisation du substrat pour ameliorer le rendement de circuits mosfet |
Country Status (6)
Country | Link |
---|---|
US (1) | US4092548A (fr) |
JP (1) | JPS53114656A (fr) |
DE (1) | DE2809966C2 (fr) |
FR (1) | FR2384389A1 (fr) |
GB (1) | GB1595143A (fr) |
IT (1) | IT1109158B (fr) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4345213A (en) * | 1980-02-28 | 1982-08-17 | Rca Corporation | Differential-input amplifier circuitry with increased common-mode _voltage range |
US4460835A (en) * | 1980-05-13 | 1984-07-17 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generator |
US4307333A (en) * | 1980-07-29 | 1981-12-22 | Sperry Corporation | Two way regulating circuit |
JPS6199413A (ja) * | 1984-10-19 | 1986-05-17 | Mitsubishi Electric Corp | 出力回路装置 |
JPH038013Y2 (fr) * | 1985-07-11 | 1991-02-27 | ||
JPH038012Y2 (fr) * | 1985-07-11 | 1991-02-27 | ||
JPS6383923U (fr) * | 1986-11-19 | 1988-06-01 | ||
DE3869229D1 (de) * | 1987-06-10 | 1992-04-23 | Siemens Ag | Generatorschaltung. |
US4775807A (en) * | 1987-06-29 | 1988-10-04 | International Business Machines Corp. | Single ended receiver circuit with hysteresis |
JPH0831791B2 (ja) * | 1988-12-28 | 1996-03-27 | 三菱電機株式会社 | 半導体装置 |
JPH04287418A (ja) * | 1991-03-18 | 1992-10-13 | Fujitsu Ltd | 半導体集積回路 |
JPH0496136U (fr) * | 1991-08-01 | 1992-08-20 | ||
US5543654A (en) * | 1992-01-28 | 1996-08-06 | Thunderbird Technologies, Inc. | Contoured-tub fermi-threshold field effect transistor and method of forming same |
JP3179350B2 (ja) * | 1996-09-09 | 2001-06-25 | 日本電気株式会社 | レベルシフト回路 |
JP4253052B2 (ja) * | 1997-04-08 | 2009-04-08 | 株式会社東芝 | 半導体装置 |
JP2002520979A (ja) * | 1998-07-14 | 2002-07-09 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 基板バイアスを使用したcmos遅延回路 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3749936A (en) * | 1971-08-19 | 1973-07-31 | Texas Instruments Inc | Fault protected output buffer |
US3911289A (en) * | 1972-08-18 | 1975-10-07 | Matsushita Electric Ind Co Ltd | MOS type semiconductor IC device |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3506851A (en) * | 1966-12-14 | 1970-04-14 | North American Rockwell | Field effect transistor driver using capacitor feedback |
US3737673A (en) * | 1970-04-27 | 1973-06-05 | Tokyo Shibaura Electric Co | Logic circuit using complementary type insulated gate field effect transistors |
US3912948A (en) * | 1971-08-30 | 1975-10-14 | Nat Semiconductor Corp | Mos bootstrap inverter circuit |
US3775693A (en) * | 1971-11-29 | 1973-11-27 | Moskek Co | Mosfet logic inverter for integrated circuits |
JPS48101846A (fr) * | 1972-04-03 | 1973-12-21 | ||
JPS50134553A (fr) * | 1974-04-10 | 1975-10-24 | ||
US3898477A (en) * | 1974-06-03 | 1975-08-05 | Motorola Inc | Self ratioing input buffer circuit |
DE2443219B2 (de) * | 1974-09-10 | 1976-09-23 | Logikschaltung in komplementaer- kanal-mis-technik | |
US4049978A (en) * | 1976-01-26 | 1977-09-20 | Western Digital Corporation | MOS high current drive circuit |
US4049980A (en) * | 1976-04-26 | 1977-09-20 | Hewlett-Packard Company | IGFET threshold voltage compensator |
US4072868A (en) * | 1976-09-16 | 1978-02-07 | International Business Machines Corporation | FET inverter with isolated substrate load |
-
1977
- 1977-03-15 US US05/777,793 patent/US4092548A/en not_active Expired - Lifetime
-
1978
- 1978-01-25 JP JP628378A patent/JPS53114656A/ja active Granted
- 1978-02-06 GB GB4704/78A patent/GB1595143A/en not_active Expired
- 1978-02-08 FR FR7804183A patent/FR2384389A1/fr active Granted
- 1978-02-10 IT IT20147/78A patent/IT1109158B/it active
- 1978-03-08 DE DE2809966A patent/DE2809966C2/de not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3749936A (en) * | 1971-08-19 | 1973-07-31 | Texas Instruments Inc | Fault protected output buffer |
US3911289A (en) * | 1972-08-18 | 1975-10-07 | Matsushita Electric Ind Co Ltd | MOS type semiconductor IC device |
Non-Patent Citations (1)
Title |
---|
NV433/72 * |
Also Published As
Publication number | Publication date |
---|---|
DE2809966C2 (de) | 1986-08-14 |
DE2809966A1 (de) | 1978-09-21 |
FR2384389B1 (fr) | 1980-08-29 |
GB1595143A (en) | 1981-08-05 |
IT7820147A0 (it) | 1978-02-10 |
US4092548A (en) | 1978-05-30 |
JPS5716534B2 (fr) | 1982-04-06 |
IT1109158B (it) | 1985-12-16 |
JPS53114656A (en) | 1978-10-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |