JPS53114656A - Fet inverter circuit - Google Patents

Fet inverter circuit

Info

Publication number
JPS53114656A
JPS53114656A JP628378A JP628378A JPS53114656A JP S53114656 A JPS53114656 A JP S53114656A JP 628378 A JP628378 A JP 628378A JP 628378 A JP628378 A JP 628378A JP S53114656 A JPS53114656 A JP S53114656A
Authority
JP
Japan
Prior art keywords
inverter circuit
fet inverter
fet
circuit
inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP628378A
Other languages
English (en)
Other versions
JPS5716534B2 (ja
Inventor
Edowaado Beirusutein Ji Kenesu
Narandasu Katechi Haritsushiyu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS53114656A publication Critical patent/JPS53114656A/ja
Publication of JPS5716534B2 publication Critical patent/JPS5716534B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H03K19/09443—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
JP628378A 1977-03-15 1978-01-25 Fet inverter circuit Granted JPS53114656A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/777,793 US4092548A (en) 1977-03-15 1977-03-15 Substrate bias modulation to improve mosfet circuit performance

Publications (2)

Publication Number Publication Date
JPS53114656A true JPS53114656A (en) 1978-10-06
JPS5716534B2 JPS5716534B2 (ja) 1982-04-06

Family

ID=25111295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP628378A Granted JPS53114656A (en) 1977-03-15 1978-01-25 Fet inverter circuit

Country Status (6)

Country Link
US (1) US4092548A (ja)
JP (1) JPS53114656A (ja)
DE (1) DE2809966C2 (ja)
FR (1) FR2384389A1 (ja)
GB (1) GB1595143A (ja)
IT (1) IT1109158B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0496136U (ja) * 1991-08-01 1992-08-20

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4345213A (en) * 1980-02-28 1982-08-17 Rca Corporation Differential-input amplifier circuitry with increased common-mode _voltage range
US4460835A (en) * 1980-05-13 1984-07-17 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generator
US4307333A (en) * 1980-07-29 1981-12-22 Sperry Corporation Two way regulating circuit
JPS6199413A (ja) * 1984-10-19 1986-05-17 Mitsubishi Electric Corp 出力回路装置
JPH038013Y2 (ja) * 1985-07-11 1991-02-27
JPH038012Y2 (ja) * 1985-07-11 1991-02-27
JPS6383923U (ja) * 1986-11-19 1988-06-01
ATE73957T1 (de) * 1987-06-10 1992-04-15 Siemens Ag Generatorschaltung.
US4775807A (en) * 1987-06-29 1988-10-04 International Business Machines Corp. Single ended receiver circuit with hysteresis
JPH0831791B2 (ja) * 1988-12-28 1996-03-27 三菱電機株式会社 半導体装置
JPH04287418A (ja) * 1991-03-18 1992-10-13 Fujitsu Ltd 半導体集積回路
US5543654A (en) * 1992-01-28 1996-08-06 Thunderbird Technologies, Inc. Contoured-tub fermi-threshold field effect transistor and method of forming same
JP3179350B2 (ja) * 1996-09-09 2001-06-25 日本電気株式会社 レベルシフト回路
JP4253052B2 (ja) * 1997-04-08 2009-04-08 株式会社東芝 半導体装置
WO2000004638A1 (en) * 1998-07-14 2000-01-27 Koninklijke Philips Electronics N.V. Cmos delay circuit using substrate biassing

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3506851A (en) * 1966-12-14 1970-04-14 North American Rockwell Field effect transistor driver using capacitor feedback
CA945641A (en) * 1970-04-27 1974-04-16 Tokyo Shibaura Electric Co. Logic circuit using complementary type insulated gate field effect transistors
US3749936A (en) * 1971-08-19 1973-07-31 Texas Instruments Inc Fault protected output buffer
US3912948A (en) * 1971-08-30 1975-10-14 Nat Semiconductor Corp Mos bootstrap inverter circuit
US3775693A (en) * 1971-11-29 1973-11-27 Moskek Co Mosfet logic inverter for integrated circuits
JPS48101846A (ja) * 1972-04-03 1973-12-21
US3911289A (en) * 1972-08-18 1975-10-07 Matsushita Electric Ind Co Ltd MOS type semiconductor IC device
JPS50134553A (ja) * 1974-04-10 1975-10-24
US3898477A (en) * 1974-06-03 1975-08-05 Motorola Inc Self ratioing input buffer circuit
DE2443219B2 (de) * 1974-09-10 1976-09-23 Logikschaltung in komplementaer- kanal-mis-technik
US4049978A (en) * 1976-01-26 1977-09-20 Western Digital Corporation MOS high current drive circuit
US4049980A (en) * 1976-04-26 1977-09-20 Hewlett-Packard Company IGFET threshold voltage compensator
US4072868A (en) * 1976-09-16 1978-02-07 International Business Machines Corporation FET inverter with isolated substrate load

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0496136U (ja) * 1991-08-01 1992-08-20

Also Published As

Publication number Publication date
JPS5716534B2 (ja) 1982-04-06
US4092548A (en) 1978-05-30
IT1109158B (it) 1985-12-16
IT7820147A0 (it) 1978-02-10
FR2384389A1 (fr) 1978-10-13
GB1595143A (en) 1981-08-05
DE2809966C2 (de) 1986-08-14
DE2809966A1 (de) 1978-09-21
FR2384389B1 (ja) 1980-08-29

Similar Documents

Publication Publication Date Title
GB2000929B (en) Inverter
GB2001508B (en) Hybrid circuit
JPS53103124A (en) Inverter
JPS53114656A (en) Fet inverter circuit
JPS5430440A (en) Inverter
GB2007055B (en) Circuit arrangement
GB1542239A (en) Fet integrated circuit devices
JPS5394160A (en) Muutuning circuit
JPS5477037A (en) Selffgate circuit
JPS53110444A (en) Ladderrtype circuit
JPS5395225A (en) Switchinggtype constanttcurrent circuit
GB2005102B (en) Gate circuit
GB2000396B (en) Transverter circuit
JPS5436980A (en) Meterrdriving circuit
JPS5473237A (en) Inverter circuit
JPS5449101A (en) Supperssed circuit
JPS541874A (en) Circuit parts
JPS5429022A (en) Transistor inverter
JPS53103123A (en) Inverter
JPS5472427A (en) Inverter
JPS5423977A (en) Contacttswitch circuit
JPS5475036A (en) Inverter circuit
JPS53109123A (en) Inverter circuit
JPS5446331A (en) Transistor inverter
JPS5465332A (en) Transistor inverter