FR2376519A1 - Dispositif a barriere de schottky ameliore et son procede de fabrication - Google Patents
Dispositif a barriere de schottky ameliore et son procede de fabricationInfo
- Publication number
- FR2376519A1 FR2376519A1 FR7735961A FR7735961A FR2376519A1 FR 2376519 A1 FR2376519 A1 FR 2376519A1 FR 7735961 A FR7735961 A FR 7735961A FR 7735961 A FR7735961 A FR 7735961A FR 2376519 A1 FR2376519 A1 FR 2376519A1
- Authority
- FR
- France
- Prior art keywords
- barrier device
- schottky
- manufacturing process
- improved barrier
- schottky barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 229910000765 intermetallic Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052723 transition metal Inorganic materials 0.000 abstract 1
- 150000003624 transition metals Chemical class 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28537—Deposition of Schottky electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/755,272 US4141020A (en) | 1976-12-29 | 1976-12-29 | Intermetallic aluminum-transition metal compound Schottky contact |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2376519A1 true FR2376519A1 (fr) | 1978-07-28 |
FR2376519B1 FR2376519B1 ( ) | 1983-02-04 |
Family
ID=25038445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7735961A Granted FR2376519A1 (fr) | 1976-12-29 | 1977-11-21 | Dispositif a barriere de schottky ameliore et son procede de fabrication |
Country Status (7)
Country | Link |
---|---|
US (1) | US4141020A ( ) |
JP (1) | JPS5823952B2 ( ) |
CA (1) | CA1079867A ( ) |
DE (1) | DE2754861C2 ( ) |
FR (1) | FR2376519A1 ( ) |
GB (1) | GB1588257A ( ) |
IT (1) | IT1115690B ( ) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0024572A2 (de) * | 1979-09-04 | 1981-03-11 | International Business Machines Corporation | Elektrisch leitender Kontakt- oder Metallisierungsaufbau für Halbleitersubstrate |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4310568A (en) * | 1976-12-29 | 1982-01-12 | International Business Machines Corporation | Method of fabricating improved Schottky barrier contacts |
US4206472A (en) * | 1977-12-27 | 1980-06-03 | International Business Machines Corporation | Thin film structures and method for fabricating same |
US4214256A (en) * | 1978-09-08 | 1980-07-22 | International Business Machines Corporation | Tantalum semiconductor contacts and method for fabricating same |
US4201999A (en) * | 1978-09-22 | 1980-05-06 | International Business Machines Corporation | Low barrier Schottky diodes |
SE8101994L (sv) * | 1981-03-27 | 1982-09-28 | Tove Per Arne | Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd |
JPS58170059A (ja) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | 半導体装置 |
JPS6081859A (ja) * | 1983-10-11 | 1985-05-09 | Matsushita Electric Ind Co Ltd | シヨツトキ−障壁半導体装置 |
US4586063A (en) * | 1984-04-02 | 1986-04-29 | Oki Electric Industry Co., Ltd. | Schottky barrier gate FET including tungsten-aluminum alloy |
JPS6373660A (ja) * | 1986-09-17 | 1988-04-04 | Fujitsu Ltd | 半導体装置 |
US4847675A (en) * | 1987-05-07 | 1989-07-11 | The Aerospace Corporation | Stable rare-earth alloy graded junction contact devices using III-V type substrates |
US5075755A (en) * | 1987-10-20 | 1991-12-24 | Bell Communications Research, Inc. | Epitaxial intermetallic contact for compound semiconductors |
JP2503269B2 (ja) * | 1989-03-16 | 1996-06-05 | 沖電気工業株式会社 | 電界効果トランジスタのゲ―ト電極形成方法 |
JPH03233972A (ja) * | 1990-02-08 | 1991-10-17 | Matsushita Electron Corp | 半導体装置用電極およびその製造方法 |
JPH06163879A (ja) * | 1992-11-18 | 1994-06-10 | Nec Corp | 半導体装置及びその製造方法 |
DE4328791C2 (de) * | 1993-08-26 | 1997-07-17 | Siemens Matsushita Components | Hybrid-Thermistortemperaturfühler |
US5693564A (en) * | 1994-12-22 | 1997-12-02 | Intel Corporation | Conductor fill reflow with intermetallic compound wetting layer for semiconductor fabrication |
JPH0945635A (ja) * | 1995-07-27 | 1997-02-14 | Mitsubishi Electric Corp | 半導体装置の製造方法,及び半導体装置 |
SG55246A1 (en) * | 1995-12-29 | 1998-12-21 | Ibm | Aluminum alloy for the damascene process for on-chip wiring applications |
US5933753A (en) * | 1996-12-16 | 1999-08-03 | International Business Machines Corporation | Open-bottomed via liner structure and method for fabricating same |
US6576547B2 (en) | 1998-03-05 | 2003-06-10 | Micron Technology, Inc. | Residue-free contact openings and methods for fabricating same |
JP2003142732A (ja) * | 2001-10-31 | 2003-05-16 | Sharp Corp | オーミック電極、n型電極、窒化物系化合物半導体発光素子およびその製造方法 |
US6794753B2 (en) * | 2002-12-27 | 2004-09-21 | Lexmark International, Inc. | Diffusion barrier and method therefor |
US9853025B1 (en) * | 2016-10-14 | 2017-12-26 | International Business Machines Corporation | Thin film metallic resistors formed by surface treatment of insulating layer |
CN110121789A (zh) * | 2017-10-04 | 2019-08-13 | 松下知识产权经营株式会社 | 光器件、光电转换装置及燃料生成装置 |
JP7507438B2 (ja) * | 2019-03-29 | 2024-06-28 | パナソニックIpマネジメント株式会社 | 光デバイス、光電変換装置、および燃料生成装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3669730A (en) * | 1970-04-24 | 1972-06-13 | Bell Telephone Labor Inc | Modifying barrier layer devices |
FR2191268A1 ( ) * | 1972-06-29 | 1974-02-01 | Philips Nv |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3506893A (en) * | 1968-06-27 | 1970-04-14 | Ibm | Integrated circuits with surface barrier diodes |
NL6911534A ( ) * | 1968-08-01 | 1970-02-03 | ||
US4009481A (en) * | 1969-12-15 | 1977-02-22 | Siemens Aktiengesellschaft | Metal semiconductor diode |
US3652905A (en) * | 1970-05-26 | 1972-03-28 | Westinghouse Electric Corp | Schottky barrier power rectifier |
US3780320A (en) * | 1971-12-20 | 1973-12-18 | Ibm | Schottky barrier diode read-only memory |
JPS4979461A ( ) * | 1972-12-05 | 1974-07-31 | ||
US3995301A (en) * | 1973-03-23 | 1976-11-30 | Ibm Corporation | Novel integratable Schottky Barrier structure and a method for the fabrication thereof |
JPS5168775A (en) * | 1974-12-11 | 1976-06-14 | Fujitsu Ltd | Handotaisochino seizohoho |
US4017890A (en) * | 1975-10-24 | 1977-04-12 | International Business Machines Corporation | Intermetallic compound layer in thin films for improved electromigration resistance |
-
1976
- 1976-12-29 US US05/755,272 patent/US4141020A/en not_active Expired - Lifetime
-
1977
- 1977-09-26 CA CA287,496A patent/CA1079867A/en not_active Expired
- 1977-11-21 FR FR7735961A patent/FR2376519A1/fr active Granted
- 1977-12-07 GB GB50997/77A patent/GB1588257A/en not_active Expired
- 1977-12-09 DE DE2754861A patent/DE2754861C2/de not_active Expired
- 1977-12-12 JP JP52148249A patent/JPS5823952B2/ja not_active Expired
- 1977-12-16 IT IT30786/77A patent/IT1115690B/it active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3669730A (en) * | 1970-04-24 | 1972-06-13 | Bell Telephone Labor Inc | Modifying barrier layer devices |
FR2191268A1 ( ) * | 1972-06-29 | 1974-02-01 | Philips Nv |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0024572A2 (de) * | 1979-09-04 | 1981-03-11 | International Business Machines Corporation | Elektrisch leitender Kontakt- oder Metallisierungsaufbau für Halbleitersubstrate |
EP0024572A3 (en) * | 1979-09-04 | 1983-07-20 | International Business Machines Corporation | Electrically conductive contact or metallizing structure for semiconductor substrates |
Also Published As
Publication number | Publication date |
---|---|
JPS5384464A (en) | 1978-07-25 |
IT1115690B (it) | 1986-02-03 |
US4141020A (en) | 1979-02-20 |
FR2376519B1 ( ) | 1983-02-04 |
DE2754861C2 (de) | 1983-11-17 |
GB1588257A (en) | 1981-04-23 |
CA1079867A (en) | 1980-06-17 |
DE2754861A1 (de) | 1978-07-06 |
JPS5823952B2 (ja) | 1983-05-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |