DE2754861C2 - Schottky-Sperrschichtkontakt für Halbleitervorrichtung und Verfahren zu dessen Herstellung - Google Patents
Schottky-Sperrschichtkontakt für Halbleitervorrichtung und Verfahren zu dessen HerstellungInfo
- Publication number
- DE2754861C2 DE2754861C2 DE2754861A DE2754861A DE2754861C2 DE 2754861 C2 DE2754861 C2 DE 2754861C2 DE 2754861 A DE2754861 A DE 2754861A DE 2754861 A DE2754861 A DE 2754861A DE 2754861 C2 DE2754861 C2 DE 2754861C2
- Authority
- DE
- Germany
- Prior art keywords
- aluminum
- layer
- tantalum
- tempering
- intermetallic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004888 barrier function Effects 0.000 title claims description 38
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 48
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 45
- 229910000765 intermetallic Inorganic materials 0.000 claims description 41
- 238000005496 tempering Methods 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 31
- 229910052723 transition metal Inorganic materials 0.000 claims description 27
- 150000003624 transition metals Chemical class 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 229910052715 tantalum Inorganic materials 0.000 claims description 26
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 150000002739 metals Chemical class 0.000 claims description 12
- LNGCCWNRTBPYAG-UHFFFAOYSA-N aluminum tantalum Chemical compound [Al].[Ta] LNGCCWNRTBPYAG-UHFFFAOYSA-N 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 8
- 229910004490 TaAl Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910007880 ZrAl Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 claims description 3
- 229910000943 NiAl Inorganic materials 0.000 claims description 2
- 229910010038 TiAl Inorganic materials 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- 230000008569 process Effects 0.000 description 15
- 239000012071 phase Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 11
- 230000008020 evaporation Effects 0.000 description 10
- 238000001704 evaporation Methods 0.000 description 10
- 230000007704 transition Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 description 8
- 238000000137 annealing Methods 0.000 description 8
- 238000002844 melting Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 230000008018 melting Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- DNXNYEBMOSARMM-UHFFFAOYSA-N alumane;zirconium Chemical compound [AlH3].[Zr] DNXNYEBMOSARMM-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010029216 Nervousness Diseases 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- -1 z. B. Zi-Jon Chemical class 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28537—Deposition of Schottky electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/755,272 US4141020A (en) | 1976-12-29 | 1976-12-29 | Intermetallic aluminum-transition metal compound Schottky contact |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2754861A1 DE2754861A1 (de) | 1978-07-06 |
| DE2754861C2 true DE2754861C2 (de) | 1983-11-17 |
Family
ID=25038445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2754861A Expired DE2754861C2 (de) | 1976-12-29 | 1977-12-09 | Schottky-Sperrschichtkontakt für Halbleitervorrichtung und Verfahren zu dessen Herstellung |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4141020A ( ) |
| JP (1) | JPS5823952B2 ( ) |
| CA (1) | CA1079867A ( ) |
| DE (1) | DE2754861C2 ( ) |
| FR (1) | FR2376519A1 ( ) |
| GB (1) | GB1588257A ( ) |
| IT (1) | IT1115690B ( ) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4310568A (en) * | 1976-12-29 | 1982-01-12 | International Business Machines Corporation | Method of fabricating improved Schottky barrier contacts |
| US4206472A (en) * | 1977-12-27 | 1980-06-03 | International Business Machines Corporation | Thin film structures and method for fabricating same |
| US4214256A (en) * | 1978-09-08 | 1980-07-22 | International Business Machines Corporation | Tantalum semiconductor contacts and method for fabricating same |
| US4201999A (en) * | 1978-09-22 | 1980-05-06 | International Business Machines Corporation | Low barrier Schottky diodes |
| US4300149A (en) * | 1979-09-04 | 1981-11-10 | International Business Machines Corporation | Gold-tantalum-titanium/tungsten alloy contact for semiconductor devices and having a gold/tantalum intermetallic barrier region intermediate the gold and alloy elements |
| SE8101994L (sv) * | 1981-03-27 | 1982-09-28 | Tove Per Arne | Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd |
| JPS58170059A (ja) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | 半導体装置 |
| JPS6081859A (ja) * | 1983-10-11 | 1985-05-09 | Matsushita Electric Ind Co Ltd | シヨツトキ−障壁半導体装置 |
| US4586063A (en) * | 1984-04-02 | 1986-04-29 | Oki Electric Industry Co., Ltd. | Schottky barrier gate FET including tungsten-aluminum alloy |
| JPS6373660A (ja) * | 1986-09-17 | 1988-04-04 | Fujitsu Ltd | 半導体装置 |
| US4847675A (en) * | 1987-05-07 | 1989-07-11 | The Aerospace Corporation | Stable rare-earth alloy graded junction contact devices using III-V type substrates |
| US5075755A (en) * | 1987-10-20 | 1991-12-24 | Bell Communications Research, Inc. | Epitaxial intermetallic contact for compound semiconductors |
| JP2503269B2 (ja) * | 1989-03-16 | 1996-06-05 | 沖電気工業株式会社 | 電界効果トランジスタのゲ―ト電極形成方法 |
| JPH03233972A (ja) * | 1990-02-08 | 1991-10-17 | Matsushita Electron Corp | 半導体装置用電極およびその製造方法 |
| JPH06163879A (ja) * | 1992-11-18 | 1994-06-10 | Nec Corp | 半導体装置及びその製造方法 |
| DE4328791C2 (de) * | 1993-08-26 | 1997-07-17 | Siemens Matsushita Components | Hybrid-Thermistortemperaturfühler |
| US5693564A (en) * | 1994-12-22 | 1997-12-02 | Intel Corporation | Conductor fill reflow with intermetallic compound wetting layer for semiconductor fabrication |
| JPH0945635A (ja) * | 1995-07-27 | 1997-02-14 | Mitsubishi Electric Corp | 半導体装置の製造方法，及び半導体装置 |
| SG55246A1 (en) * | 1995-12-29 | 1998-12-21 | Ibm | Aluminum alloy for the damascene process for on-chip wiring applications |
| US5933753A (en) * | 1996-12-16 | 1999-08-03 | International Business Machines Corporation | Open-bottomed via liner structure and method for fabricating same |
| US6576547B2 (en) | 1998-03-05 | 2003-06-10 | Micron Technology, Inc. | Residue-free contact openings and methods for fabricating same |
| JP2003142732A (ja) * | 2001-10-31 | 2003-05-16 | Sharp Corp | オーミック電極、ｎ型電極、窒化物系化合物半導体発光素子およびその製造方法 |
| US6794753B2 (en) * | 2002-12-27 | 2004-09-21 | Lexmark International, Inc. | Diffusion barrier and method therefor |
| US9853025B1 (en) * | 2016-10-14 | 2017-12-26 | International Business Machines Corporation | Thin film metallic resistors formed by surface treatment of insulating layer |
| WO2019069585A1 (ja) | 2017-10-04 | 2019-04-11 | パナソニックＩｐマネジメント株式会社 | 光デバイス、光電変換装置、および燃料生成装置 |
| CN113518754A (zh) * | 2019-03-29 | 2021-10-19 | 松下知识产权经营株式会社 | 光器件、光电转换装置以及燃料生成装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3506893A (en) * | 1968-06-27 | 1970-04-14 | Ibm | Integrated circuits with surface barrier diodes |
| BE736650A ( ) * | 1968-08-01 | 1969-12-31 | ||
| US4009481A (en) * | 1969-12-15 | 1977-02-22 | Siemens Aktiengesellschaft | Metal semiconductor diode |
| US3669730A (en) * | 1970-04-24 | 1972-06-13 | Bell Telephone Labor Inc | Modifying barrier layer devices |
| US3652905A (en) * | 1970-05-26 | 1972-03-28 | Westinghouse Electric Corp | Schottky barrier power rectifier |
| US3780320A (en) * | 1971-12-20 | 1973-12-18 | Ibm | Schottky barrier diode read-only memory |
| NL7208995A ( ) * | 1972-06-29 | 1974-01-02 | ||
| JPS4979461A ( ) * | 1972-12-05 | 1974-07-31 | ||
| US3995301A (en) * | 1973-03-23 | 1976-11-30 | Ibm Corporation | Novel integratable Schottky Barrier structure and a method for the fabrication thereof |
| JPS5168775A (en) * | 1974-12-11 | 1976-06-14 | Fujitsu Ltd | Handotaisochino seizohoho |
| US4017890A (en) * | 1975-10-24 | 1977-04-12 | International Business Machines Corporation | Intermetallic compound layer in thin films for improved electromigration resistance |
-
1976
- 1976-12-29 US US05/755,272 patent/US4141020A/en not_active Expired - Lifetime
-
1977
- 1977-09-26 CA CA287,496A patent/CA1079867A/en not_active Expired
- 1977-11-21 FR FR7735961A patent/FR2376519A1/fr active Granted
- 1977-12-07 GB GB50997/77A patent/GB1588257A/en not_active Expired
- 1977-12-09 DE DE2754861A patent/DE2754861C2/de not_active Expired
- 1977-12-12 JP JP52148249A patent/JPS5823952B2/ja not_active Expired
- 1977-12-16 IT IT30786/77A patent/IT1115690B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5384464A (en) | 1978-07-25 |
| IT1115690B (it) | 1986-02-03 |
| DE2754861A1 (de) | 1978-07-06 |
| US4141020A (en) | 1979-02-20 |
| FR2376519A1 (fr) | 1978-07-28 |
| FR2376519B1 ( ) | 1983-02-04 |
| JPS5823952B2 (ja) | 1983-05-18 |
| GB1588257A (en) | 1981-04-23 |
| CA1079867A (en) | 1980-06-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8126 | Change of the secondary classification |
Ipc: H01L 21/24 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |