FR2371062A1 - - Google Patents

Info

Publication number
FR2371062A1
FR2371062A1 FR7733956A FR7733956A FR2371062A1 FR 2371062 A1 FR2371062 A1 FR 2371062A1 FR 7733956 A FR7733956 A FR 7733956A FR 7733956 A FR7733956 A FR 7733956A FR 2371062 A1 FR2371062 A1 FR 2371062A1
Authority
FR
France
Prior art keywords
metal
semiconductor
mixture
solution
alcoholic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7733956A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Space and Mission Systems Corp
Original Assignee
TRW Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TRW Inc filed Critical TRW Inc
Publication of FR2371062A1 publication Critical patent/FR2371062A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/19—Diffusion sources
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
FR7733956A 1976-11-15 1977-11-10 Withdrawn FR2371062A1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/741,793 US4126713A (en) 1976-11-15 1976-11-15 Forming films on semiconductor surfaces with metal-silica solution

Publications (1)

Publication Number Publication Date
FR2371062A1 true FR2371062A1 (enExample) 1978-06-09

Family

ID=24982230

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7733956A Withdrawn FR2371062A1 (enExample) 1976-11-15 1977-11-10

Country Status (3)

Country Link
US (1) US4126713A (enExample)
DE (1) DE2750805A1 (enExample)
FR (1) FR2371062A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015064A1 (en) * 1979-01-31 1980-09-03 Fujitsu Limited Process for producing bipolar semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4259409A (en) * 1980-03-06 1981-03-31 Ses, Incorporated Electroless plating process for glass or ceramic bodies and product
JPS6021888A (ja) * 1983-07-18 1985-02-04 工業技術院長 セラミツクスのメタライズ法
JP2004259882A (ja) * 2003-02-25 2004-09-16 Seiko Epson Corp 半導体装置及びその製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660156A (en) * 1970-08-19 1972-05-02 Monsanto Co Semiconductor doping compositions
FR2128793A1 (en) * 1971-03-09 1972-10-20 Motorola Inc Radiation sensitive material - for photolithography consisting of mixt of liquid organo siloxane and sensitising agent eg
US3789023A (en) * 1972-08-09 1974-01-29 Motorola Inc Liquid diffusion dopant source for semiconductors
US3834939A (en) * 1970-02-19 1974-09-10 Ibm Method of forming doped silicon oxide layers on substrates and paint-on compositions useful in such methods
US3915766A (en) * 1972-05-31 1975-10-28 Texas Instruments Inc Composition for use in forming a doped oxide film

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL241982A (enExample) * 1958-08-13 1900-01-01
GB930091A (en) * 1960-06-24 1963-07-03 Mond Nickel Co Ltd Improvements relating to the production of semi-conductor devices
US3535146A (en) * 1967-05-02 1970-10-20 Aircraft Plating Inc Diffusion coating

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3834939A (en) * 1970-02-19 1974-09-10 Ibm Method of forming doped silicon oxide layers on substrates and paint-on compositions useful in such methods
US3660156A (en) * 1970-08-19 1972-05-02 Monsanto Co Semiconductor doping compositions
FR2128793A1 (en) * 1971-03-09 1972-10-20 Motorola Inc Radiation sensitive material - for photolithography consisting of mixt of liquid organo siloxane and sensitising agent eg
US3915766A (en) * 1972-05-31 1975-10-28 Texas Instruments Inc Composition for use in forming a doped oxide film
US3789023A (en) * 1972-08-09 1974-01-29 Motorola Inc Liquid diffusion dopant source for semiconductors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015064A1 (en) * 1979-01-31 1980-09-03 Fujitsu Limited Process for producing bipolar semiconductor device

Also Published As

Publication number Publication date
DE2750805A1 (de) 1978-05-18
US4126713A (en) 1978-11-21

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Legal Events

Date Code Title Description
ST Notification of lapse