FR2370366A1 - Procede de fabrication de photodiodes a l'antimoniure d'indium - Google Patents
Procede de fabrication de photodiodes a l'antimoniure d'indiumInfo
- Publication number
- FR2370366A1 FR2370366A1 FR7716777A FR7716777A FR2370366A1 FR 2370366 A1 FR2370366 A1 FR 2370366A1 FR 7716777 A FR7716777 A FR 7716777A FR 7716777 A FR7716777 A FR 7716777A FR 2370366 A1 FR2370366 A1 FR 2370366A1
- Authority
- FR
- France
- Prior art keywords
- indium antimonide
- junction
- manufacture
- epitaxial layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
- H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US73965976A | 1976-11-08 | 1976-11-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2370366A1 true FR2370366A1 (fr) | 1978-06-02 |
| FR2370366B3 FR2370366B3 (en, 2012) | 1980-06-20 |
Family
ID=24973264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7716777A Granted FR2370366A1 (fr) | 1976-11-08 | 1977-06-01 | Procede de fabrication de photodiodes a l'antimoniure d'indium |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5358791A (en, 2012) |
| CA (1) | CA1081835A (en, 2012) |
| DE (1) | DE2720952A1 (en, 2012) |
| FR (1) | FR2370366A1 (en, 2012) |
| GB (1) | GB1516627A (en, 2012) |
| NL (1) | NL7705212A (en, 2012) |
| SE (1) | SE7705622L (en, 2012) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100762772B1 (ko) | 2003-09-09 | 2007-10-02 | 아사히 가세이 일렉트로닉스 가부시끼가이샤 | 적외선 센서 ｉｃ, 적외선 센서 및 그 제조 방법 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1489613A (en, 2012) * | 1965-08-19 | 1967-11-13 |
-
1977
- 1977-04-06 CA CA275,727A patent/CA1081835A/en not_active Expired
- 1977-05-09 GB GB19275/77A patent/GB1516627A/en not_active Expired
- 1977-05-10 DE DE19772720952 patent/DE2720952A1/de not_active Withdrawn
- 1977-05-11 NL NL7705212A patent/NL7705212A/xx not_active Application Discontinuation
- 1977-05-13 SE SE7705622A patent/SE7705622L/xx unknown
- 1977-06-01 FR FR7716777A patent/FR2370366A1/fr active Granted
- 1977-09-05 JP JP10715577A patent/JPS5358791A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CA1081835A (en) | 1980-07-15 |
| GB1516627A (en) | 1978-07-05 |
| JPS5358791A (en) | 1978-05-26 |
| NL7705212A (nl) | 1978-05-10 |
| FR2370366B3 (en, 2012) | 1980-06-20 |
| DE2720952A1 (de) | 1978-05-24 |
| SE7705622L (sv) | 1978-05-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |